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    BLF6G20LS-110 Search Results

    BLF6G20LS-110 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB Original PDF
    BLF6G20LS-110,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB; Package: SOT502B (LDMOST); Container: Blister pack Original PDF
    BLF6G20LS-110,118 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" Original PDF