BLF6G20LS-110 |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G20LS-110 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB |
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Original |
PDF
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BLF6G20LS-110,112 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB; Package: SOT502B (LDMOST); Container: Blister pack |
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Original |
PDF
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BLF6G20LS-110,118 |
|
NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" |
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Original |
PDF
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