BLF4G22S-100 Search Results
BLF4G22S-100 Price and Stock
Philips Semiconductors BLF4G22S-100 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
BLF4G22S-100 | 5,806 |
|
Get Quote | |||||||
|
BLF4G22S-100 | 4,644 |
|
Buy Now | |||||||
NXP Semiconductors BLF4G22S-100N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT; |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
BLF4G22S-100 | 222 |
|
Get Quote |
BLF4G22S-100 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
---|---|---|---|---|---|---|
BLF4G22S-100 |
|
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB | Original | |||
BLF4G22S-100,112 |
|
RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 2.2GHZ SOT502B | Original |