| BLF6G10S-45 |
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NXP Semiconductors
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UHF power LDMOS transistor - Application: CW and W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 60@CW 6@W-CDMA %; Frequency: 800-1000 MHz; Output power: 45@CW 1@W-CDMA W; Package material: SOT608B ; Power gain: 20@CW 21@W-CDMA dB |
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Original |
PDF
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| BLF6G10S-45 |
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NXP Semiconductors
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BLF6G10 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
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Original |
PDF
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| BLF6G10S-45,112 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 23DB SOT608B |
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Original |
PDF
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| BLF6G10S-45,112 |
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NXP Semiconductors
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UHF power LDMOS transistor - Application: CW and W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 60@CW 6@W-CDMA %; Frequency: 800-1000 MHz; Output power: 45@CW 1@W-CDMA W; Package material: SOT608B ; Power gain: 20@CW 21@W-CDMA dB; Package: SOT608B (CDFM2); Container: Bulk Pack |
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Original |
PDF
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| BLF6G10S-45,112 |
|
NXP Semiconductors
|
BLF6G10 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
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Original |
PDF
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