"photo transistor"
Abstract: MXP1126-C ua20
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1126-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy
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MXP1126-C
MSC1341
"photo transistor"
MXP1126-C
ua20
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Q2N2218
Abstract: Q2N2218A Transistor 2N2218a 2N2218A chip die npn transistor
Text: 580 Pleasant St. Watertown, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 2N2218A Features • • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /251 Collector - Base Voltage 75V Collector - Current 800 mA Medium Current, Bipolar Transistor
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2N2218A
MSCO933A
DSW2N2218A
Q2N2218
Q2N2218A
Transistor 2N2218a
2N2218A
chip die npn transistor
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q2n2219a
Abstract: Q2N2219 2N2219A transistor 2N2219A q2n* npn transistor chip die npn transistor
Text: 580 Pleasant St. Watertown, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 2N2219A Features • • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /251 Collector - Base Voltage 75 V Collector - Current 800 mA Medium Current, Bipolar Transistor
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2N2219A
MSCO934A
DSW2N2219A
q2n2219a
Q2N2219
2N2219A
transistor 2N2219A
q2n* npn transistor
chip die npn transistor
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MSC1342
Abstract: "photo transistor" MXP415-C
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP415-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy
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MXP415-C
MSC1342
"photo transistor"
MXP415-C
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Q2n2222a spice model
Abstract: q2n2222a 2n2222a spice model q2n222 SPICE model 2n2222a Q2N2222 MICROSEMI 2N2222A BF 198 spice 2N2222A JANTX 2N2222A JAN
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2222A Features • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /255 Collector - Base Voltage 75 V Collector - Current 800 mA High Speed, Medium Current Bipolar Transistor
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2N2222A
MSC0275A
DSW2N2222A
Q2n2222a spice model
q2n2222a
2n2222a spice model
q2n222
SPICE model 2n2222a
Q2N2222
MICROSEMI 2N2222A
BF 198 spice
2N2222A JANTX
2N2222A JAN
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q2n222
Abstract: Q2N2221A 2N2221A JANTX q2n* npn transistor 2N2221A NPN transistor 2n2221a BF 198 spice Q2N2221
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2221A Features SWITCHING TRANSISTOR JAN, JANTX, JANTXV • Meets MIL 19500 /255 • Collector - Base Voltage 75 V • Collector - Current 800 mA • High Speed, Medium Current Bipolar Transistor
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2N2221A
MSC0328A
DSW2N2221A<
q2n222
Q2N2221A
2N2221A JANTX
q2n* npn transistor
2N2221A
NPN transistor 2n2221a
BF 198 spice
Q2N2221
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Q2N2221A
Abstract: Q2N2221 Q2N222 2N2221A JANTX 2N2221A BF 198 spice q2n* npn transistor chip die npn transistor DSW2N2221A
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2221A Features SWITCHING TRANSISTOR JAN, JANTX, JANTXV • Meets MIL 19500 /255 • Collector - Base Voltage 75 V • Collector - Current 800 mA • High Speed, Medium Current Bipolar Transistor
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2N2221A
DSW2N2221A<
Q2N2221A
Q2N2221
Q2N222
2N2221A JANTX
2N2221A
BF 198 spice
q2n* npn transistor
chip die npn transistor
DSW2N2221A
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j78 transistor
Abstract: transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE
Text: an AMP company Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors
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PH1214-3L
j78 transistor
transistor j7
transistor 669
transistor j4
13MM
PH1214-3L
j4 transistor
MICROWAVE TEST FIXTURE
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2N2484
Abstract: Q2N2484 MSCO280A q2n* npn transistor
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2484 Features • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /376 Collector - Base Voltage 60 V Collector - Current 50 mA High Speed, Low Power Bipolar Transistor
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2N2484
MSCO280A
DSW2N2484
2N2484
Q2N2484
q2n* npn transistor
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transistor B42
Abstract: AX400 b42 transistor
Text: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.
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b457S25
PH107
T-41-63
transistor B42
AX400
b42 transistor
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Untitled
Abstract: No abstract text available
Text: NEC PHOTO TRANSISTOR ELECTRON DEVICE PHI 04 PHOTO TRANSISTOR -N E P O C SERIES The PH 104 is a p h o to transistor in a plastic molded package, and PACKAGE DIMENSIONS very suitable fo r a detector o f a ph oto interrupter. in millimeters inches 3.25 (0 1 2 8 )
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K438-1000A
Abstract: BUK438-1000A BUK438-1000B k4381
Text: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a
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BUK438-1OOOA/B
711002b
BUK438
-1000A
-1000B
BUK438-1000A/B
711062b
T-39-I5
K438-1000A
BUK438-1000A
BUK438-1000B
k4381
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TLP620
Abstract: No abstract text available
Text: T O S H IB A PH O T O C O U PLER SEMICONDUCTOR TOSHIBA TEC H N IC A L TLP620, TLP620-2, TLP620-4 DATA G aA s IRED & PH OTO -TRANSISTOR TLP620 PROGRAM M ABLE CONTROLLERS A C / DC-INPUT MODULE TELECOMMUNICATION The T O S H IB A TLP620, -2 and -4 consists of a photo-transistor
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TLP620,
TLP620-2,
TLP620-4
TLP620)
TLP620-2
TLP620-4
TLP620
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BF753
Abstract: No abstract text available
Text: Ph|lips^emiconductor^_ WM 7 1 1 Qflg[3 O D bflbkiM GS2 PH I N Teliminar^pecifica^ NPN 5 GHz wideband transistor FEATURES BF753 PINNING • Low cost • Low noise figure 1 • 5 V tuner applications. 2 emitter 3 collector PIN DESCRIPTION base DESCRIPTION NPN silicon planar epitaxial
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7110agb
BF753
cur20
BF753
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BFR93
Abstract: BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47
Text: Philips Semiconductors 711002t D D b 'iim T3Û PH I N Product specification NPN 5 G Hz w ideband transistor DESCRIPTION £ BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The transistor features very low
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711005t
BFR93
ON4186)
BFT93.
711002b
BFR91
BFT93
choke 3122 108 20150
ScansUX40
transistor bfr93
TRANSISTOR B47
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Untitled
Abstract: No abstract text available
Text: N AMER PH IL IPS/D ISCR ETE b'lE » bb53T31 0030733 b32 « A P X Product Specification Philips Semiconductors BUK482-100A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface
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bb53T31
BUK482-100A
OT223
Fig-14
riin76ter
bb53R31
DD3D736
OT223.
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GS 069 LF
Abstract: BUK437-400B DIODE JS.4 P02S
Text: N ANER PH ILI PS/DISCRETE bbSBSBl 0G304Ô0 7Gb • APX LTE » Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in
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D030MÃ
BUK437-400B
GS 069 LF
DIODE JS.4
P02S
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Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status Preliminary specification date of issue March 1991 PH ILIPS 7 ^ 3 ? ' ' ° 9 B U K 475-6 00B PowerMOS transistor INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
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-600B
PINNING-SOT186A
BUK475-600B
711Dfl2b
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PH IL I P S / D I S C R E T E T> bbS3^31 00 30 4 5 5 550 • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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BUK436-60A/B
BUK436
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PDF
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BUK437-500B
Abstract: No abstract text available
Text: AMER PH IL IPS /DIS CRET E bTE T> • b b S 3 R 31 OOBDMôS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3R31
BUK437-500B
btS3T31
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BUK416-100BE
Abstract: BUK416-100AE 33078 BUK416 LD110
Text: PH IL IP S INTERNATIONAL bSE T> H 7110flSb 0Db3ô7b GôT « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode fieid-effect power transistor in ISOTOP envelope. The device is intended for use in
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7110flSb
BUK416-100AE/BE
OT227B
BUK416
-100AE
-100BE
BUK416-1OOAE/BE
BUK4W-I00DE
BUK416-100BE
BUK416-100AE
33078
LD110
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BUK655-500B
Abstract: No abstract text available
Text: N AMER PH ILIPS/DISCRETE LTE D • ^53*131 0030680 BBT « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK655-500B
PINNING-T0220AB
bbS3T31
003Dflai4
BUK655-500B
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k 351 transistor
Abstract: MARKING G3 Transistor BF536 36I marking marking G3 sot-23 marking code 352 S2 MARKING TRANSISTOR
Text: N AMER PH ILIPS/DISCRETE ObE D bbS3T31 0Q1S70M 1 X BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. A lso suitable as r.f. amplifier and oscillator in f.m. tuners.
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bbS3T31
0Q1S70M
BF536
00157Gb
T-31-15
k 351 transistor
MARKING G3 Transistor
BF536
36I marking
marking G3
sot-23 marking code 352
S2 MARKING TRANSISTOR
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BUK436-100B
Abstract: BUK436-100A
Text: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK436-1OOA/B
BUK436
-100A
-100B
125sJ
CJ0304b4
BUK436-100B
BUK436-100A
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