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    TRANSISTOR CODE J6 Search Results

    TRANSISTOR CODE J6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CODE J6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH 2190 HOT Transistor

    Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
    Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21

    J964

    Abstract: AGR21045EF AGR21045XF JESD22-C101A
    Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A

    J964

    Abstract: No abstract text available
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF J964

    AGR21045EF

    Abstract: AGR21045XF JESD22-C101A
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF AGR21045EF DS04-241RFPP DS04-178RFPP) AGR21045XF JESD22-C101A

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


    Original     		PDF DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK

    2N4401_D11Z

    Abstract: PN2222N TO-92 Tape and Reel Data D81Z CLIP-2 j21z CBVK741B019 F63TNR Fairchild taping TO-92 transistor k 0247 J60Z
    Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: NSID: D/C1: CBVK741B019 QTY: PN2222N See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:


    Original     		PDF CBVK741B019 PN2222N D9842 F63TNR F63TNR PN222N D9842AB F63TNR) 375mm 2N4401_D11Z PN2222N TO-92 Tape and Reel Data D81Z CLIP-2 j21z CBVK741B019 Fairchild taping TO-92 transistor k 0247 J60Z

    transistor equivalent 2n5551

    Abstract: BC557 TRANSISTOR REPLACEMENT transistor KSP 42 2025h AN500-x Application Notes AN500-x AN522 AS2525 AN525 AS2522 and AS2591
    Text: AN 522: AS2522A/B Single Chip Handsfree Line Interface Demo Board Application Note AN522 – Preliminary Application Note AS2522A/AS2522B Key features • • • • • • • • complete handsfree telephone with AS2522 Line Interface FSK Transmitter V.23,Bell 202, V.21, Bell103 on AS2522B only


    Original     		PDF AS2522A/B AN522 AS2522A/AS2522B AS2522 Bell103 AS2522B transistor equivalent 2n5551 BC557 TRANSISTOR REPLACEMENT transistor KSP 42 2025h AN500-x Application Notes AN500-x AN522 AS2525 AN525 AS2522 and AS2591

    J6 transistor

    Abstract: transistor j6 transistor marking code 431
    Text: EPC8010 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 100V • RDS ON , 160 mΩ • ID, 3.4 A • Optimized eGaN FET for high frequency applications EPC8010 eGaN FETs are supplied only in passivated die form with solder bars


    Original     		PDF EPC8010 EPC8010 J6 transistor transistor j6 transistor marking code 431

    MPSA92(KSP92) equivalent

    Abstract: AN2201 CI AS2536 TRANSISTOR SMD 13W MPS A43 SCHEMATIC smd transistor BC557 SmD TRANSISTOR a42 CI AS2534B 1N4007 M7 150v varistor
    Text: Application Note AN2201 Application Note AN2201: AS2533.6 Single Chip Telephone Demo Board  Austria Mikro Systeme International AG 1 Scope This application note describes the use of the Single Chip Telephone IC´s AS2533.6, based on the multi standard demo board DB2201.


    Original     		PDF AN2201 AN2201: AS2533. DB2201. An2201 MPSA92(KSP92) equivalent CI AS2536 TRANSISTOR SMD 13W MPS A43 SCHEMATIC smd transistor BC557 SmD TRANSISTOR a42 CI AS2534B 1N4007 M7 150v varistor

    D72Z

    Abstract: CBVK741B019 F63TNR PN2222N D73Z J32Z
    Text: TO-226AE Tape and Reel Data TO-226 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION CBVK741B019 LOT: PN2222N NSID: D/C1: QTY: See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:


    Original     		PDF O-226AE O-226 CBVK741B019 PN2222N D9842 F63TNR PN222N F63TNR D9842AB D72Z CBVK741B019 PN2222N D73Z J32Z

    2N4401_D11Z

    Abstract: Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z
    Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles BOXTNR Label 5 Reels per Intermediate Box Customized Label F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box AMMO PACK OPTION


    Original     		PDF F63TNR 375mm 267mm 327mm 158mm 135mm 333mm 231mm 183mm 2N4401_D11Z Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z

    BS270

    Abstract: J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z
    Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		PDF BS270 500mA 400mA, BS270 J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z

    J6 transistor

    Abstract: S9014 S9014W transistor SOT-23 marking code J6
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015W. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9014W Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-323 ORDERING INFORMATION


    Original     		PDF S9014W S9015W. OT-323 BL/SSSTF059 J6 transistor S9014 S9014W transistor SOT-23 marking code J6

    transistor SOT23 J6

    Abstract: Transistor S9014 transistor SOT-23 marking code J6 S9014 S9014 sot-23 J6 s9014 equivalent s9014 TRANSISTOR j6 sot23 J6 SOT 23 S9014 SOT-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9014 Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION


    Original     		PDF S9014 S9015. OT-23 BL/SSSTC083 transistor SOT23 J6 Transistor S9014 transistor SOT-23 marking code J6 S9014 S9014 sot-23 J6 s9014 equivalent s9014 TRANSISTOR j6 sot23 J6 SOT 23 S9014 SOT-23

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    MC9S12ZVMC12

    Abstract: resolver sensor S12ZVML12EVBQSG MC9S12ZVM
    Text: Freescale Semiconductor User's Guide Document Number:MC9S12ZVM128MCBUG Rev 1, 07/2013 S12ZVM12EVB Evaluation Board User Guide Contents 1 Introduction The S12ZVMx12EVB board is designed to drive 3-phase BLDC or PMSM motors, enabling implementation of motor


    Original     		PDF MC9S12ZVM128MCBUG S12ZVM12EVB S12ZVMx12EVB S12ZVM, 16-bit MC9S12ZVMC12 resolver sensor S12ZVML12EVBQSG MC9S12ZVM

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode 12 • Avalanche-rated V»;05'J6 i Pin 1 Pin 2 G Type BUZ 308 Vbs 800 V 2.6 A ^DS on 4 fl Pin 3 s D Package Ordering Code TO-218AA C67078-S3109-A2 Maximum Ratings Parameter Symbol


    OCR Scan     		PDF O-218AA C67078-S3109-A2 O-218

    BLY94

    Abstract: philips bly94
    Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 002T75fl BLY94 7Z67S60 BLY94 philips bly94

    BLY94

    Abstract: VQE 13E philips Trimmer 60 pf transistor 42t vhf power transistor 50W Wf VQE 23 F BLY94 application notes film dielectric trimmer WF VQE 23 D WF VQE 23 e
    Text: PHILIPS INTERNATIONAL bSE ß • 7110äSb> DGL3bSS 5^3 ■ PHIN B LY 94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 7110fl2fc. BLY94 OT-55. Tmb-25 BLY94 VQE 13E philips Trimmer 60 pf transistor 42t vhf power transistor 50W Wf VQE 23 F BLY94 application notes film dielectric trimmer WF VQE 23 D WF VQE 23 e

    BLY94

    Abstract: vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55
    Text: b'ìE » N AMER PHILIPS/DISCRETE • bbS3131 ÜÜSTTSfl 22T IAPX B LY94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF bbS3131 BLY94 OT-55. Tmb-25 BLY94 vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55

    bo434

    Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
    Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages


    OCR Scan     		PDF 00043bfl BD434 BD440 BD442 BD441. t25mn 434/BD 436/BD 023SbOS G00437H bo434 b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202

    power transistor mrc 438

    Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
    Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase


    OCR Scan     		PDF 23SbQS 0Q043bfl BD434 BD440 BD442 434/BD 436/BD BD434. BD438. fl23SbO power transistor mrc 438 mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    2N6084

    Abstract: 2N6080 2n6os transistor 36o a 2M6081 tt 93 n 08 358 transistor transistor n6
    Text: II j - t m IW iiC tT JS & rrtM « V l l W W ^ i l f l 140 Commerce Drive Montgomeryvìlle, PA 18936-1013 Tel: 215 631-9840 . 2 N6 080 2 N6084 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FREGLENCY 175MHz VOLTAGE 12,5V : POWER OUT 4 40W


    OCR Scan     		PDF N6084 230MHz 175MHz SD1012 1014-C 2M6081 1229-O SD1018 2N60S2 2N6080 2N6084 2N6080 2n6os transistor 36o a 2M6081 tt 93 n 08 358 transistor transistor n6