FDC6331L
Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where
|
Original
|
PDF
|
FDC6331L
FDC6331L
SSOT-6
ZENER SINGLE COLOR CODE
FDC633N
125OC
AN1030
CBVK741B019
F63TNR
|
FDP2670
Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and
|
Original
|
PDF
|
FDP2670/FDB2670
FDP2670
D2Pak Package dimensions
CBVK741B019
EO70
F63TNR
FDB2670
FDP7060
NDP4060L
|
CBVK741B019
Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
Text: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
FDP6644/FDB6644
CBVK741B019
EO70
F63TNR
FDB6644
FDP6644
FDP7060
NDP4060L
|
D 1437 transistor
Abstract: CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
Text: SOIC-16 Tape and Reel Data SOIC 16ld s Packaging Configuration: Figure 1.0 N Packaging Description: ELECTROSTATIC SENSITIVE DEVICES DO NOT SHIP O R STORE NEAR STRONG ELECTROSTATIC ELECTROM AGNETIC, MAGNETIC OR RADIOACTIVE FIELDS T NR DATE PT NUM BER PEEL STRENGTH M IN _gms
|
Original
|
PDF
|
SOIC-16
330cm
D 1437 transistor
CBVK741B019
F63TNR
L86Z
NDM3000
NDM3001
|
diode sod123 W1
Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2
Text: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
|
Original
|
PDF
|
OD-123
OD123
177cm
330cm
diode sod123 W1
CBVK741B019
F63TNR
MMSZ5221B
sod123 E2
|
SSOT-3
Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
Text: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
FSB649
SSOT-3
CBVK741B019
F63TNR
FSB649
MMSZ5221B
SuperSOTTM -3
|
F852 transistor
Abstract: F852 CBVK741B019 F63TNR PN2222A
Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
|
Original
|
PDF
|
OT-223
330cm
177cm
F852 transistor
F852
CBVK741B019
F63TNR
PN2222A
|
Untitled
Abstract: No abstract text available
Text: FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS ON = 50 mΩ @ VGS = 4.5 V
|
Original
|
PDF
|
FDN371N
|
high voltage mosfet, to-220 case
Abstract: No abstract text available
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
high voltage mosfet, to-220 case
|
Untitled
Abstract: No abstract text available
Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6690S/FDB6690S
FDP6690S
FDP6690S/FDB6690S
FDP6035AL/FDB6035AL
|
CBVK741B019
Abstract: F63TNR FDG327N FDG6302P SC70-6
Text: FDG327N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use
|
Original
|
PDF
|
FDG327N
CBVK741B019
F63TNR
FDG327N
FDG6302P
SC70-6
|
BS170
Abstract: BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
Text: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been
|
Original
|
PDF
|
BS170
MMBF170
500mA
BS170
BS170 application note
mosfet bs170
transistor MOSFET BS170
sot23 BS170
BS170 AN
equivalent of BS170
transistor BS170
EQUIVALENT FOR bs170
MMBF170
|
SSOT-3
Abstract: CBVK741B019 F63TNR MMSZ5221B ssot3
Text: SuperSOTTM-3 Tape and Reel Data SSOT-3 Packaging Configuration: Figure 1.0 Customize Label Packaging Description: SSOT-3 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
|
Original
|
PDF
|
177cm
330cm
SSOT-3
CBVK741B019
F63TNR
MMSZ5221B
ssot3
|
MOSFET and parallel Schottky diode
Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
MOSFET and parallel Schottky diode
CBVK741B019
EO70
FDB6644S
FDP6644
FDP7060
|
|
|
CBVK741B019
Abstract: F63TNR FDG329N FDG6302P SC70-6 Part marking 42 SC70-6
Text: FDG329N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use
|
Original
|
PDF
|
FDG329N
CBVK741B019
F63TNR
FDG329N
FDG6302P
SC70-6
Part marking 42 SC70-6
|
FDC6420C
Abstract: CBVK741B019 F63TNR FDC633N
Text: FDC6420C 20V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior
|
Original
|
PDF
|
FDC6420C
FDC6420C
CBVK741B019
F63TNR
FDC633N
|
FDC3601N
Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N
Text: FDC3601N Dual N-Channel 100V Specified PowerTrenchMOSFET Features • 1.0 A, 100 V. General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low
|
Original
|
PDF
|
FDC3601N
FDC3601N
SSOT-6
CBVK741B019
F63TNR
FDC633N
|
CBVK741B019
Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
|
Original
|
PDF
|
FDP2570/FDB2570
CBVK741B019
EO70
F63TNR
FDB2570
FDP2570
FDP7060
NDP4060L
D2Pak Package dimensions
|
2539a
Abstract: No abstract text available
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
|
Original
|
PDF
|
FDP2570/FDB2570
2539a
|
Untitled
Abstract: No abstract text available
Text: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6670S/FDB6670S
FDP6670S
FDP6670S/FDB6670S
FDP6670A/FDB6670A
|
marking 333
Abstract: FDC6333C
Text: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior
|
Original
|
PDF
|
FDC6333C
marking 333
FDC6333C
|
MARKING 333
Abstract: No abstract text available
Text: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior
|
Original
|
PDF
|
FDC6333C
MARKING 333
|
Untitled
Abstract: No abstract text available
Text: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior
|
Original
|
PDF
|
FDG6332C
|
Marking Code m sc70-6
Abstract: FDG6316P
Text: FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.7 A, –12 V.
|
Original
|
PDF
|
FDG6316P
SC70-6
SC70-6
Marking Code m sc70-6
FDG6316P
|