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    J35Z Search Results

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    J35Z Price and Stock

    onsemi BC338_J35Z

    TRANS NPN 25V 0.8A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BC338_J35Z Bulk 2,000
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    • 10000 $0.06966
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    onsemi BC184_J35Z

    TRANS NPN 30V 0.1A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BC184_J35Z Bulk 2,000
    • 1 -
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    • 10000 $0.0452
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    onsemi BF240_J35Z

    RF TRANS NPN 40V 1.1GHZ TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF240_J35Z Bulk 2,000
    • 1 -
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    • 10000 $0.05266
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    onsemi BC307_J35Z

    TRANS PNP 45V 0.1A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BC307_J35Z Bulk 2,000
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    • 10000 $0.05675
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    onsemi TIS93_J35Z

    TRANS PNP 40V 0.8A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TIS93_J35Z Bulk 2,000
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    J35Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-92 Package Dimensions

    Abstract: L34Z J35Z Leadform
    Text: TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form J35Z Option (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed


    Original     		PDF

    J35Z

    Abstract: L34Z
    Text: Package Information TO-92 Tape and Reel Data and Package Dimensions, continued TO-92; TO-18 Reverse Lead Form J35Z Option (FS PKG Code 92, 94, 96, 97*, 98*) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22


    Original     		PDF

    MOSFET bs170

    Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
    Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


    Original     		PDF BS170 MMBF170 500mA MOSFET bs170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note

    F63TNR

    Abstract: PN2222N BS270 CBVK741B019
    Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		PDF BS270 500mA 400mA, F63TNR PN2222N BS270 CBVK741B019

    MMBF170

    Abstract: BS170 application note BS170 CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92
    Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


    Original     		PDF BS170 MMBF170 500mA MMBF170 BS170 application note CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92

    BSS110

    Abstract: BSS84
    Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF BSS84 BSS110 BSS84: BSS110: BSS110

    BS270

    Abstract: J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z
    Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		PDF BS270 500mA 400mA, BS270 J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z

    BSS100

    Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF BSS100 BSS123 BSS100: BSS123: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123

    2N4401_D11Z

    Abstract: Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z
    Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles BOXTNR Label 5 Reels per Intermediate Box Customized Label F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box AMMO PACK OPTION


    Original     		PDF F63TNR 375mm 267mm 327mm 158mm 135mm 333mm 231mm 183mm 2N4401_D11Z Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z

    D72Z

    Abstract: CBVK741B019 F63TNR PN2222N D73Z J32Z
    Text: TO-226AE Tape and Reel Data TO-226 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION CBVK741B019 LOT: PN2222N NSID: D/C1: QTY: See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:


    Original     		PDF O-226AE O-226 CBVK741B019 PN2222N D9842 F63TNR PN222N F63TNR D9842AB D72Z CBVK741B019 PN2222N D73Z J32Z

    BSS110

    Abstract: BSS84 CBVK741B019 F63TNR PN2222N
    Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF BSS84 BSS110 BSS84: BSS110: BSS110 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		PDF BS270 500mA 400mA,

    BSS110

    Abstract: BSS84
    Text: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF BSS84 BSS110 BSS84: BSS110: BSS110

    BSS100

    Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF BSS100 BSS123 BSS100: BSS123: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92

    bs270

    Abstract: J35Z
    Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		PDF BS270 500mA 400mA, J35Z