fairchild MLP8
Abstract: max 232 8-soic
Text: High-Speed, Low-Side Gate Drivers Fairchild’s Offering The FAN3000 series low-side gate drivers offer an unequaled combination of higher performance, smaller size, and more input options for driving N-channel power MOSFETs and IGBTs: • Industry’s smallest packages 232 and 333mm MLP
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FAN3000
333mm
fairchild MLP8
max 232 8-soic
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Untitled
Abstract: No abstract text available
Text: 3757 W. Touhy Ave., Lincolnwood, IL 60712 847 675-1760 • (847) 673-2850 · www.illcap.com +105°C Small Size Epoxy Dipped Radial Lead Metallized Polyester Capacitors Part Number: 333MMR400K This part is RoHS compliant Electrical Specifications Capacitance: 0.033uF
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333MMR400K
033uF
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MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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Si4450DY
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
Text: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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SI6926DQ
2502P
CBHK741B019
F63TNR
FDW2502P
SI6926DQ
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SI9955DY
Abstract: fairchild NDS 1182
Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9955DY
fairchild NDS
1182
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transistor 2N5461
Abstract: No abstract text available
Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
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2N5460
2N5461
2N5462
MMBF5460
MMBF5461
2N5462
transistor 2N5461
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FDS9953A
Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
Text: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS9953A
FDS9953A
9953A
CBVK741B019
F011
F63TNR
F852
L86Z
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FDC6331L
Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where
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FDC6331L
FDC6331L
SSOT-6
ZENER SINGLE COLOR CODE
FDC633N
125OC
AN1030
CBVK741B019
F63TNR
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FDW2501NZ
Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Text: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2501NZ
FDW2501NZ
2501NZ
DIODE marking S4 06
2502P
CBHK741B019
F63TNR
FDW2502P
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2506p
Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
Text: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2506P
2506p
diode s4 53a
2506p marking
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2506P
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D 1437 transistor
Abstract: CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
Text: SOIC-16 Tape and Reel Data SOIC 16ld s Packaging Configuration: Figure 1.0 N Packaging Description: ELECTROSTATIC SENSITIVE DEVICES DO NOT SHIP O R STORE NEAR STRONG ELECTROSTATIC ELECTROM AGNETIC, MAGNETIC OR RADIOACTIVE FIELDS T NR DATE PT NUM BER PEEL STRENGTH M IN _gms
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SOIC-16
330cm
D 1437 transistor
CBVK741B019
F63TNR
L86Z
NDM3000
NDM3001
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F63TNR
Abstract: FDFS2P102A soic-8 33a
Text: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P102A
F63TNR
FDFS2P102A
soic-8 33a
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diode sod123 W1
Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2
Text: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OD-123
OD123
177cm
330cm
diode sod123 W1
CBVK741B019
F63TNR
MMSZ5221B
sod123 E2
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH24
MMBTH24
MPSH24
OT-23
MPSH11
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH24
MPSH11
PN2222N
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SSOT-3
Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
Text: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FSB649
SSOT-3
CBVK741B019
F63TNR
FSB649
MMSZ5221B
SuperSOTTM -3
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FDS6688
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56
Text: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6688
FDS6688
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
rca tube 56
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FDS9945
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDS9945
FDS9945
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
86 diode
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CBVK741B019
Abstract: F011 F63TNR F852 FDS3812 FDS9953A L86Z
Text: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.
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FDS3812
CBVK741B019
F011
F63TNR
F852
FDS3812
FDS9953A
L86Z
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6692 FDS9953A L86Z
Text: FDS6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6692
CBVK741B019
F011
F63TNR
F852
FDS6692
FDS9953A
L86Z
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
2502P
CBHK741B019
F63TNR
FDW2502P
FDW2507NZ
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F852 transistor
Abstract: F852 CBVK741B019 F63TNR PN2222A
Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-223
330cm
177cm
F852 transistor
F852
CBVK741B019
F63TNR
PN2222A
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 333MMR250K t S M ALL SIZE EPOXY DIPPED RADIAL LEAD M ETALLIZED POLYESTER CAPACITO RS Parts are RoHS com pliant Date code w hen parts became RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 0.033 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.01 Max at 1000 Hz and 25°C
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333MMR250K
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 333MMR250K t GENERAL PURPOSE FILM P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 FEATURES Radial lead, self healing metallized polyester, small size ELECTRICAL SPECIFICATIONS C apacitance: 0.033 uF T ole ra n ce: -10 % . +10 %
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333MMR250K
125at
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