z24 mosfet
Abstract: No abstract text available
Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global
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AGR09180EF
Hz--895
DS04-123RFPP
DS04-031RFPP)
z24 mosfet
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mosfet j122
Abstract: J118 MOSFET j122 mosfet ALT500
Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
iGR09085EF
DS04-055RFPP
DS04-028RFPP)
mosfet j122
J118 MOSFET
j122 mosfet
ALT500
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AGR09180EF
Abstract: JESD22-C101A transistor z14 L
Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global
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AGR09180EF
Hz--895
AGR09180EF
suit-20
AGR19K180U
JESD22-C101A
transistor z14 L
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mosfet j122
Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J
Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
AGR09085E
del00
AGR09085EU
AGR09085EF
mosfet j122
AGR09085EF
J118 MOSFET
j122 mosfet
AGR09085EU
JESD22-C101A
RM73B2B120J
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Z921
Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
AGR09130EU
AGR09130EF
Z921
transistor MARKING NC KRC
MOSFET 930 06 ng
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AGR21030EF
Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21030EF
AGR21030EF
1030EF
AGR21030XF
21045F
12-digit
2.4 ghz mosfet
AGR21030XF
JESD22-C101A
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transistor MARKING NC KRC
Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
AGR09130E
AGR09130EU
AGR09130EF
transistor MARKING NC KRC
MARKING CODE c26
AGR09130EF
AGR09130EU
JESD22-C101A
amplifier copy machine
100B1R5BW
MOSFET marking Z4
marking code ACP
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TH 2190 HOT Transistor
Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21180EF
AGR21180EF
AGR19K180U
AGR21180XF
12-digit
TH 2190 HOT Transistor
TH 2190 mosfet
JESD22-C101A
GHZ-21
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J118 MOSFET
Abstract: j122 mosfet AGR09085E AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J
Text: Preliminary Data Sheet January 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
AGR09085E
incorporati2-4106)
DS01-209RFPP
J118 MOSFET
j122 mosfet
AGR09085EF
AGR09085EU
JESD22-A114
gl 3201
J122 transistor
mosfet j122
RM73B2B120J
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AGR21060EF
Abstract: 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060E AGR21060EU C15B material sheet C15A
Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21060E
AGR21060E
AGR21060EU
AGR21060EF
AGR21060EF
100B8R2JCA500X
CDM 07
C14A
JESD22-C101A
R210
AGR21060EU
C15B material sheet
C15A
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
delivering10-12,
DS04-055RFPP
DS04-028RFPP)
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ti c11b
Abstract: No abstract text available
Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21060E
AGR21060EU
AGR21060EF
ti c11b
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AGR09085EF
Abstract: AGR09085E AGR09085EU JESD22-C101A j122 mosfet
Text: Preliminary Data Sheet April 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
AGR09085E
DS04-152RFPP
DS04-055RFPP)
AGR09085EF
AGR09085EU
JESD22-C101A
j122 mosfet
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JESD22-C101A
Abstract: AGR09085E AGR09085EF AGR09085EU ne 22 mosfet
Text: Preliminary Data Sheet May 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
AGR09085E
DS04-199RFPP
DS04-152RFPP)
JESD22-C101A
AGR09085EF
AGR09085EU
ne 22 mosfet
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J964
Abstract: AGR21045EF AGR21045XF JESD22-C101A
Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
AGR21045EF
CGR21045EF
AGR21045XF
21045F
12-digit
J964
AGR21045XF
JESD22-C101A
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J964
Abstract: No abstract text available
Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
J964
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AGR21045EF
Abstract: AGR21045XF JESD22-C101A
Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
AGR21045EF
DS04-241RFPP
DS04-178RFPP)
AGR21045XF
JESD22-C101A
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sm 4500
Abstract: No abstract text available
Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125EU
AGR21125EF
AGR21125End
sm 4500
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AGR09130E
Abstract: AGR09130EF AGR09130EU JESD22-C101A
Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
AGR09130E
DS04-030RFPP
DS03-151RFPP)
AGR09130EF
AGR09130EU
JESD22-C101A
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Untitled
Abstract: No abstract text available
Text: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
ca1212
DS04-028RFPP
DS03-057RFPP)
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z921
Abstract: No abstract text available
Text: DRAFT COPY ONLY Preliminary Data Sheet September 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
c2000,
DS03-057RFPP
DS01-209RFPP)
z921
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7826 Transistor
Abstract: marking code Sk transistors
Text: 2SD2114K Transistor, NPN Features dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code • high DC current amplification, typically hFE = 1200 • high emitter-base voltage, VEBO = 12V(min)
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2SD2114K
SC-59)
2SD2114K;
2SD2114K
7826 Transistor
marking code Sk transistors
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SL 100 NPN Transistor base emitter collector
Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
Text: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,
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2SD2114K
SC-59)
2SD2114K;
12rves
2SD2114K
SL 100 NPN Transistor base emitter collector
SL 100 NPN Transistor
BF 273 transistor
transistor bf 274
BF 274 transistor
2SD2114
transistor CR NPN
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siemens 230 99 o
Abstract: BUZ30a
Text: SIEMENS BUZ30A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type V os h ^JS<on Package Ordering Code BUZ 30A 200 V 21 A 0.13 Û TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Values Continuous drain current
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BUZ30A
O-220
C67078-S1303-A3
siemens 230 99 o
BUZ30a
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