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Kyocera AVX Components 100B8R2JCA500XC100 Silicon RF Capacitors / Thin Film 500V 8.2pF Tol 5% Las Mkg
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Mouser Electronics	100B8R2JCA500XC100					1 $6.93 10 $6.01 100 $4.62 1000 $3.92 10000 $3.85	Get Quote
Richardson RFPD	100B8R2JCA500XC100				100	1 - 10 - 100 $3.84 1000 $3.46 10000 $3.06	Buy Now
Kyocera AVX Components 100B8R2JCA500XT1K Silicon RF Capacitors / Thin Film 500V 8.2pF Tol 5% Las Mkg
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Mouser Electronics	100B8R2JCA500XT1K					1 - 10 - 100 - 1000 $3.26 10000 $3.26	Get Quote
Kyocera AVX Components 100B8R2JCA500XTV Silicon RF Capacitors / Thin Film 500V 8.2pF Tol 5% Las Mkg Vertical
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Mouser Electronics	100B8R2JCA500XTV					1 - 10 - 100 - 1000 $3.27 10000 $3.27	Get Quote
Kyocera AVX Components 100B8R2JCA500XT Silicon RF Capacitors / Thin Film
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Mouser Electronics	100B8R2JCA500XT					1 - 10 - 100 - 1000 $3.6 10000 $3.6	Get Quote
American Technical Ceramics Corp ATC100B8R2JCA500XB CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 5% +TOL, 5% -TOL, BG, 90+/-20PPM/CEL TC, 0.0000082UF, SURFACE MOUNT, 1111 (Also Known As: 100B8R2JCA500XB)
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Quest Components	ATC100B8R2JCA500XB		2			1 $4.05 10 $2.7 100 $2.7 1000 $2.7 10000 $2.7	Buy Now

100B8R2JCA500X Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor 7350 Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496 Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR18060E Hz--1880 AGR18060EU AGR18060EF DS04-032RFPP DS02-325RFPP)
AGR18060E Abstract: AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114 100B100JCA500X Text: AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global	Original	PDF	AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114 100B100JCA500X
100B8R2JCA500X Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114 Text: AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global	Original	PDF	AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF 100B8R2JCA500X 100B100JCA500X AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114
AGR21060EF Abstract: 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060E AGR21060EU C15B material sheet C15A Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	PDF	AGR21060E AGR21060E AGR21060EU AGR21060EF AGR21060EF 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060EU C15B material sheet C15A
T491C Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235 Text: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 AGR19030EF DS04-224RFPP DS04-158RFPP) T491C AGR19030XF 100B100JCA500X JESD22-C101A j598 SEMICONDUCTOR J598 W1235
J56-1 Abstract: ep 55 transistor Text: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 J56-1 ep 55 transistor
ti c11b Abstract: No abstract text available Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	PDF	AGR21060E AGR21060EU AGR21060EF ti c11b
j561 Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680 Text: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030E Hz--1990 AGR19030E DS04-158RFPP DS04-076RFPP) j561 T491C AGR19030XF 100B100JCA500X AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680
transistor 7350 Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L Text: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19060E Hz--1990 AGR19060E DS04-078RFPP DS01-216RFPP) transistor 7350 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
"RF Power Amplifier" Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X Text: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF DS04-156RFPP DS04-032RFPP) "RF Power Amplifier" 100B100JCA500X AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
AGR19030XF Abstract: 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A Text: Preliminary Data Sheet March 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030E Hz--1990 AGR19030E DS04-076RFPP PB04-013RFPP) AGR19030XF 100B100JCA500X AGR19030EF AGR19030EU JESD22-C101A
AGR19030XF Abstract: 100B100JCA500X AGR19030EF JESD22-C101A Text: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 AGR19030EF AGR19030XF AGR18030F 12-digit AGR19030XF 100B100JCA500X JESD22-C101A
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR18060E AGR18060E AGR18060EU AGR18060EF DS02-325RFPP