Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR C 548 B PHILIPS Search Results

    TRANSISTOR C 548 B PHILIPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 548 B PHILIPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    flyback transformer philips TV EHT AT2097

    Abstract: TDA8447 TU305B2 AT2097 TRANSISTOR D405 flyback transformer philips AT2097 BC548 TRANSISTOR SMD IC2 7812 D409 transistor UC3843 SMD
    Text: APPLICATION NOTE Circuit description of CCM420 monitor AN97032 Philips Semiconductors Circuit description of CCM420 monitor Application Note AN97032 Abstract 2 The CCM420 demo monitor is a full I C-bus controlled 17” colour monitor. It’s extensive geometry control and


    Original     		PDF CCM420 AN97032 CCM420 P83Cx81. P83Cx80 P83Cx81 P83Cx81) flyback transformer philips TV EHT AT2097 TDA8447 TU305B2 AT2097 TRANSISTOR D405 flyback transformer philips AT2097 BC548 TRANSISTOR SMD IC2 7812 D409 transistor UC3843 SMD

    smd transistor marking DP

    Abstract: PDTA143Z TRANSISTOR SMD MARKING CODE X D PDTC143ZU PDTA143
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143Z series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 25 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA143Z 01-May-99) smd transistor marking DP TRANSISTOR SMD MARKING CODE X D PDTC143ZU PDTA143

    TRANSISTOR ww1

    Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
    Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY


    Original     		PDF BLF548 AN98021 BLF548 SCA57 TRANSISTOR ww1 mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350

    BUK7L11-34ARC

    Abstract: buk7l11
    Text: BUK7L11-34ARC TrenchPLUS standard level FET Rev. 04 — 16 December 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive GPA TrenchMOS technology.


    Original     		PDF BUK7L11-34ARC BUK7L11-34ARC buk7l11

    Power Semiconductor Applications Philips Semiconductors

    Abstract: schematic diagram induction bearing heater "Power Semiconductor Applications" Philips BUK854-500IS "CHAPTER 1 Introduction to Power Semiconductors" philips schematic induction cookers schematic diagram igbt inverter welding machine BC548 TRANSISTOR REPLACEMENT TOPFET IN IGNITION COIL BUK 546
    Text: Automotive Power Semiconductor Applications Philips Semiconductors CHAPTER 5 Automotive Power Electronics 5.1 Automotive Motor Control including selection guides 5.2 Automotive Lamp Control (including selection guides) 5.3 The TOPFET 5.4 Automotive Ignition


    Original     		PDF

    OF4455

    Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
    Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		PDF Code357A3 30-Jun-04 VY27357A3 OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P

    UJ-03

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television receivers


    OCR Scan     		PDF BU4525DF UJ-03

    Untitled

    Abstract: No abstract text available
    Text: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST70A bb53331 D023T3A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use In Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK455-200A/B BUK455 -200A -20QB T0220AB

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILT^S/B IS CRETE b'lE T> • bb53R31 0030646 T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power


    OCR Scan     		PDF bb53R31 BUK582-100A OT223 Q030AS3 OT223.

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK455-200A/B BUK455 -200A -200B T0220AB ONi25

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE Philips Semiconductors Data sheet status Product specification date o f issue March 1993 b^Z T> • bbSaiai D02H 71 276 BLV97CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain


    OCR Scan     		PDF BLV97CE OT171 MRC17S

    ceramic disc capacitor 100nf 104

    Abstract: C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE
    Text: N AMER P H I L I P S / D I S C R E T E bTE D I Philips Semiconductors ÜET1 7 1 E 7 fl B A P X BLV97CE Data sheet status bbSBTBl Product specification UHF power transistor date of issue March 1993 FEATURES QUICK REFERENCE DATA • Internal input matching to achieve


    OCR Scan     		PDF BLV97CE bbS3T31 OT171 ceramic disc capacitor 100nf 104 C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE

    BUK582-100A

    Abstract: 2T3 transistor
    Text: PHILIPS INTERNATIONAL bSE J> • 711Ga2b G0b42û4 LSÔ « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF 0Qb42flS BUK582-100A OT223 -ID/100 OT223. 2T3 transistor

    philips resistor 2322-153

    Abstract: philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips
    Text: bSE D Philips Semiconductors Product specification date of issue March 1993 711002b □□b30bö 75b IPHIN BLV97CE Data sheet status WM UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain • Ballasting resistors for an optimum


    OCR Scan     		PDF 711002b BLV97CE OT171 philips resistor 2322-153 philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips

    BF570

    Abstract: L7E transistor
    Text: •I bbS3T31 DÜEMbST 721 « A P X N AMER PHILIPS/DISCRETE BF570 b7E » SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N tran sisto r in a plastic SOT-23 va rian t envelope, intended fo r use in large-signal handling i.f. pre­ a m p lifiers o f T V receivers in c o m b in a tio n w ith surface acoustic wave filte rs.


    OCR Scan     		PDF bbS3T31 BF570 OT-23 bb53T31 BF570 50S2//1 L7E transistor

    12aw

    Abstract: transistor C 548 B Philips b872 BUW12A transistor vc 548
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters • Inverters • Switching regulators


    OCR Scan     		PDF OT429 BUW12W; BUW12AW OT429) BUW12W BUW12AW 12aw transistor C 548 B Philips b872 BUW12A transistor vc 548

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B

    BU 103 A transistor

    Abstract: transistor BG 23 0/transistor BG 23
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK200-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK200-50Y BU 103 A transistor transistor BG 23 0/transistor BG 23

    BST70A

    Abstract: y548
    Text: b7E D • bLjS3ci31 DÜE3R3S D4D I APX BST70A N AUER P H I L I P S / D I S C R E T E N-CHANNEL VERTICAL D-M OS TRANSISTOR IM-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST70A 7Z91031 BST70A y548

    BDT63

    Abstract: transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A
    Text: J PHILIPS INTERNATIONAL SbE D BDT63; 63A BDT63B; 63C 711Dfl2fc. 004355^ TT T • ■ PH IN T-JJ-Z7 SILICON DARLINGTON POWER TRANSISTORS N -P-N ep itaxial base transistors in m o n o lith ic D arling to n c irc u it fo r audio o u tp u t stages and general


    OCR Scan     		PDF BDT63; BDT63B; 711DflHh T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A

    vp07

    Abstract: vp08 TI vp05 ti vp08 CCIR-656-format
    Text: Philips Semiconductors Preliminary specification Enhanced Video Input Processor EVIP 7 SAA7111A PINNING SYMBOL PINS l/O/P (L)QFP64 PLCC68 DESCRIPTION V ddI2C TDO 1 10 P open for 3.3 V l2C-bus, connected to 5 V for 5 V l2C-bus compatibility 2 11 o test data output for boundary scan test; note 3


    OCR Scan     		PDF QFP64 SAA7111A PLCC68 A7111A VP010 VP011 VP012 VP013 VP014 VP015 vp07 vp08 TI vp05 ti vp08 CCIR-656-format

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 02 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors JC556; JC557; JC558 FEATURES PINNING • Low curren t max. 100 mA


    OCR Scan     		PDF JC556; JC557; JC558 115002/00/03/pp8

    SFG455A3

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors RF Communications Products SA607 Low voltage high performance mixer FM IF system DESCRIPTION The SA607 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate


    OCR Scan     		PDF SA607 SA607 20-lead NE605. fee560 SFG455A3