Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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bb53331
OT223
BUK581-60A
bbS3831
D030fl35
OT223.
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE b3E bb53331 DD273SD 6^3 * A P X D BT152 SERIES y v THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications
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bb53331
DD273SD
BT152
220AB
BT152-400R
002732b
10I-2
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BCY65
Abstract: No abstract text available
Text: I I N AMER PHILIPS/DISCRETE b'lE D • bb53331 □DS7b32 2SA BCY65 IAPX SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal envelope with the collector connected to the case and designed for use in amplifier and switching applications. QUICK REFERENCE DATA
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bb53331
DS7b32
BCY65
BCY65-VII
BCY65
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Untitled
Abstract: No abstract text available
Text: bb53331 Philips Semiconductors DD32313 m 3 M l APX CATV amplifier module Product specification BGD506 — N AUER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation
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bb53331
DD32313
BGD506
PINNING-SOT115C
REF44
DIN45004B;
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Untitled
Abstract: No abstract text available
Text: bb53331 0033173 b06 W A P X Philips Semiconductors Video driver hybrid amplifiers Objective specification CR4424; CR4425; CR4427 N AUER PHILIPS/DISCRETE FEATURES b^E ]> PINNING -S O T115 • Typical 10 to 90% transition times with CL= 8.5 pF: PIN 1 DESCRIPTION
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bb53331
CR4424;
CR4425;
CR4427
OT348
pF/160
2600B,
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Untitled
Abstract: No abstract text available
Text: TIP135 TIP136 TIP137 _ y v SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. TO-220AB plastic envelope. N-P-N equivalents are TIP130,
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TIP135
TIP136
TIP137
O-220AB
TIP130,
TIP131
TIP132.
TIP135
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Untitled
Abstract: No abstract text available
Text: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.
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PO40/44A
OT90B
PO40/44A
P040A,
P042A,
P043A,
P044A
satur10'
bbS3T31
0D35S50
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors GaAIAs high-voltage optocouplers CNG82/CNG83 FEATURES • High output/input current transfer ratio at low input current • High degree of AC and DC insulation 3750 V (RMS and 5300 V (DC) • Input/output pin distance
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CNG82/CNG83
E90700
BS415
CNG82
CNG83
bb53331
003530a
D3530tl
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a
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BFQ268;
BFQ268/I
BFQ268
UB8670
DD31771
LA123-
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T1P31DF
Abstract: No abstract text available
Text: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed
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TIP31F;
TIP31BF;
T1P31DF
TIP32F,
TIP32AF,
TIP32BF,
TIP32CF
TIP32DF.
TIP31F
bb53331
T1P31DF
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transistor 667
Abstract: No abstract text available
Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2
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BFR93A
BFT93.
transistor 667
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transistor BD 263
Abstract: No abstract text available
Text: BFR29 _ / V . N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in
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BFR29
003Sf
bb53331
bb53T31
0035T03
transistor BD 263
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Untitled
Abstract: No abstract text available
Text: Product specification Philip* Sem iconductor* Low input current, high-gain optocouplers 6N138/6N139 FEATURES • High current transfer ratio • Short propagation delay times • TTL compatible • Low saturation voltage/low input current • High transient immunity
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6N138/6N139
E90700
6N138
6N139
OT97F
6N138.
6N139.
003Sbfc
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bd643f
Abstract: No abstract text available
Text: BD643F; 645F; 647F BD649F; 651F y SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistorsinaSOT186 envelope with an electrically insulated mounting base. PNP complements are BD644F, BD646F, BD648F, BD650F and BD652F. QUICK R E F E R E N C E D A T A
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BD643F;
BD649F;
transistorsinaSOT186
BD644F,
BD646F,
BD648F,
BD650F
BD652F.
BD643F
bd643f
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Untitled
Abstract: No abstract text available
Text: _ BSN205 BSN205A JV N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications
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BSN205
BSN205A
D3b021
003fc
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Untitled
Abstract: No abstract text available
Text: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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bb53T31
D03D675
BUK638-500B
bb53331
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diode sy 200
Abstract: UCM0J
Text: P h ilip * S e m ic o n d u c to r* Product specification Heavy duty optocouplers CNW11AV-1/2/3 FEATU RES • Minimum 2 mm Isolation thickness between emitter and receiver • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm
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CNW11AV-1/2/3
E90700
bbS3S31
D03533L
MCB902
bb53T31
diode sy 200
UCM0J
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3^31 HF/VHF power MOS transistor — ^ — — FEATURES QDBTTS? H lfl APX Product specification BLF241E N AUER PHILIPS/DISCRETE b^E D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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BLF241E
O-39/3)
MBA379
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BDT63
Abstract: BDT62
Text: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,
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BDT63;
BDT63B;
O-220
BDT62,
BDT62A;
BDT62B
BDT62C.
BDT63
bS3T31
BDT63
BDT62
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Untitled
Abstract: No abstract text available
Text: Philips Com ponents D a ta sh e e t s ta tu s Product specification d a te o f is s u e Apr# 1991 B D S 61/61A / 61B / 61C NPN silicon Darlington power transistors DESCRIPTION PINNING - SOT223 NPN silicon pow er transistors in a m onolithic Darlington circu it in a
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61/61A
OT223
OT223)
S60/60A/60B/60C.
BDS61
BDS61/61A/61B/61C
bb53331
DD34532
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PDF
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Untitled
Abstract: No abstract text available
Text: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.
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BST70A
bb53331
D023T3A
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Untitled
Abstract: No abstract text available
Text: • bb53^31 00256=14 562 H A P X N AMER PHILIPS/DISCRETE b?E D _ PMBTA55 PMBTA56 J SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature SMD plastic envelope intended for surface mounted applications.
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PMBTA55
PMBTA56
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Untitled
Abstract: No abstract text available
Text: P h ilip s C o m p o n e n ts BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SO T199 D ESC R IP TIO N PIN NPN epitaxial base Darlington transistors for audio output stages
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BDV67AF/67BF/67CF/67DF
BDV66AF/66BF/66CF/66DF.
BDV67AF
V67BF
V67CF
BDV67DF
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PDF
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Untitled
Abstract: No abstract text available
Text: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.
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BF966S
bbS3331
003ST36
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