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    VP08 Search Results

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    VP08 Price and Stock

    NXP Semiconductors MIMX8UD3CVP08SC

    8ULP DUAL CORTEX A35
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    DigiKey MIMX8UD3CVP08SC Tray 630 1
    • 1 $20.67
    • 10 $19.253
    • 100 $16.30763
    • 1000 $15.33354
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    Avnet Americas MIMX8UD3CVP08SC Tray 26 Weeks 630
    • 1 -
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    • 1000 $15.42254
    • 10000 $13.77013
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    NXP Semiconductors MIMX8UD3DVP08SC

    I.MX8ULP, DUAL 800MHZ
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    DigiKey MIMX8UD3DVP08SC Tray 630 1
    • 1 $25.67
    • 10 $23.909
    • 100 $20.25113
    • 1000 $19.56804
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    NXP Semiconductors MIMX8US3DVP08SC

    I.MX8ULP,DUAL 800MHZ
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    DigiKey MIMX8US3DVP08SC Tray 630 1
    • 1 $19.54
    • 10 $17.96
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    NXP Semiconductors MIMX8UD7DVP08SC

    I.MX8ULP, DUAL 800MHZ
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    DigiKey MIMX8UD7DVP08SC Tray 630 1
    • 1 $21.6
    • 10 $20.118
    • 100 $17.04038
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    Essentra Components 62VP087BM11

    VENT PLUG, .875 HOLE, .031-.109
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    DigiKey 62VP087BM11 Bulk 599 1
    • 1 $0.23
    • 10 $0.193
    • 100 $0.1498
    • 1000 $0.10764
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    Find more VP08 price and stock on Findchips.com

    VP08 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VP0808 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VP0808 Unknown P-Channel Enhancement-Mode D-MOS POWER FETs Scan PDF
    VP0808B Siliconix P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP0808B Siliconix P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP0808B Unknown FET Data Book Scan PDF
    VP0808B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VP0808B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VP0808B Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VP0808B Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VP0808B-2 Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 80V 880MA TO-205 Original PDF
    VP0808B-E3 Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 80V 880MA TO-205 Original PDF
    VP0808CHP Topaz Semiconductor -80 V, 5 ?, P-channel enhancement-mode D-MOS power FET Scan PDF
    VP0808L Siliconix P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP0808L Siliconix P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP0808L Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VP0808L Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VP0808L Vishay P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP0808L Unknown FET Data Book Scan PDF
    VP0808L Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VP0808L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    VP08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VP0808L

    Abstract: VP1008L
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5


    Original     		PDF VP0808L, VP1008L VP0808L O-226AA) S-00530--Rev. 03-Apr-00 VP0808L VP1008L

    VP0808

    Abstract: No abstract text available
    Text: Supertex inc. VP0808 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness mils Back Side Metal 45 45 11 ± 1.5 Au (mils) VP0808 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original     		PDF VP0808 VP0808 A031610

    sivp

    Abstract: VP0808L-G 125OC VP0808
    Text: VP0808 Features ► ► ► ► ► ► ► P-Channel Enhancement-Mode Vertical DMOS FETs General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain


    Original     		PDF VP0808 VP0808 DSFP-VP0808 A01309 sivp VP0808L-G 125OC

    VP0808B

    Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V


    Original     		PDF VP0808B/L/M, VP1008B/L/M VP0808M VP1008B VP0808B VP0808L VP1008L VP1008M O-226AA) P-37655--Rev. VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M

    VP0808

    Abstract: No abstract text available
    Text: , Una. Lf TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV DSS / R DS(ON) BVDGS (max) 'rj(ON) (min) -80V 5.0Q -1.1A Order Number / Package TO-92 VP0808L


    Original     		PDF VP0808 VP0808L 300ns jf-10% VP0808

    VP0808L

    Abstract: VP1008L
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28


    Original     		PDF VP0808L, VP1008L VP0808L 18-Jul-08 VP0808L VP1008L

    VP0808L-G

    Abstract: vp0808
    Text: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0808 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP0808 VP0808 DSFP-VP0808 A113007 VP0808L-G

    Untitled

    Abstract: No abstract text available
    Text: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0808 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP0808 DSFP-VP0808 A091508

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability


    Original     		PDF VP0808 VP0808 DSFP-VP0808 A031411

    VP0808

    Abstract: No abstract text available
    Text: VP0808 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VP0808 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original     		PDF VP0808 VP0808 A020309

    sivp

    Abstract: VP0808L-G 125OC VP0808
    Text: VP0808 Features ► ► ► ► ► ► ► P-Channel Enhancement-Mode Vertical DMOS FETs General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain


    Original     		PDF VP0808 VP0808 DSFP-VP0808 A013009 sivp VP0808L-G 125OC

    TO-205AD

    Abstract: VP0808M VP1008B TO-237 VP0808B VP0808L VP1008L VP1008M VP100
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V


    Original     		PDF VP0808B/L/M, VP1008B/L/M VP0808M VP1008B VP0808B VP0808L VP1008L VP1008M O-226AA) P-37655--Rev. TO-205AD VP0808M VP1008B TO-237 VP0808B VP0808L VP1008L VP1008M VP100

    VP0808

    Abstract: VP0808L
    Text: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -80V 5.0Ω -1.1A VP0808L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF VP0808 VP0808L VP0808 VP0808L

    VP0808

    Abstract: VP0808L
    Text: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -80V 5.0Ω -1.1A VP0808L TO-92 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF VP0808 VP0808L VP0808 VP0808L

    Untitled

    Abstract: No abstract text available
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5


    OCR Scan     		PDF VP0808B/L/M, VP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M Appli-12 P-37655--

    Untitled

    Abstract: No abstract text available
    Text: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =


    OCR Scan     		PDF YP0808B/L/M, YP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M O-226AA) P-37655--

    vp0300m

    Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P

    VP0808B

    Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
    Text: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180


    OCR Scan     		PDF VPMH10 300us, VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P

    VP2410

    Abstract: No abstract text available
    Text: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L


    OCR Scan     		PDF VP0808B/L/M VP1008B/L/M VQ2004J \/PDV10 VQ2006J VPDV10 TP2010L TP2410L VP2410L VPDV10 VP2410

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P

    VP100

    Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP100 VP1001P VP0300B VP0300M VP0808L

    Untitled

    Abstract: No abstract text available
    Text: _ VP0808 VP1008 _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (O N) BVdgs (max) (min) TO-39 TO-92 -80V 5Q -1.1A VP0808B VP0808L -100V 5Q -1.1A VP1008B VP1008L Advanced DMOS Technology


    OCR Scan     		PDF VP0808 VP1008 VP0808B VP1008B -100V VP0808L VP1008L VP1008 VP0808

    VP8080

    Abstract: No abstract text available
    Text: V P 0808 in c . VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ ^DS ON ' d(ON) b v dos (max) (min) TO-39 TO-92 -80V 5£i -1.1A VP0808B VP0808L -100V 5£i -1.1A VP1008B VP1008L


    OCR Scan     		PDF VP1008 VP0808B VP1008B VP0808L VP1008L -100V VP1008 VP0808 VP8080

    vp0808b

    Abstract: No abstract text available
    Text: Tem ic VP0808B/L/M, VP1008B/L/M_ Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number I d A rBS(on) Max (Q) VGS(th) (V) 5 @ VGS = - 1 0 V - 2 to -4 .5 -0 .8 8 5 @ V GS = - 1 0 V - 2 to -4 .5 -0 .2 8 VP0808M 5 @ V o s = -10 V


    OCR Scan     		PDF VP0808B/L/M, VP1008B/L/M_ VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M T0-205A P-37655--Rev.