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    TRANSISTOR B42 350 Search Results

    TRANSISTOR B42 350 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B42 350 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor B42

    Abstract: smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 2SB1475 500mA -60mV -100mA transistor B42 smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking

    2N3904 A30

    Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
    Text: R Intel 840 Chipset Platform Memory Expansion Card MEC Design Guide July 2000 Document Number: 298239-001 ® Intel 840 Chipset Platform MEC R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF

    E3S-DS30E41

    Abstract: E3S-2DE4 E3S-5LE41 E3S-5E42 e3s-ls20 E3S-DS10E41 E3S-5DE42 E3S-5DE e3s-2de41 E3S-LS20XE4
    Text: Photoelectric Sensor with Built-in Amplifier E3S CSM_E3S_DS_E_7_1 General-purpose Photoelectric Sensor for High Quality and Reliable Detection Be sure to read Safety Precautions on page 8. Ordering Information General-purpose Sensors Sensing method Appearance


    Original     		PDF E3S-DS10E4 E3S-DS30E4 E3S-2E41 E3S-2LE41 E3S-2DE41 E3S-5E41 E3S-5LE41 E3S-5DE41 E3S-R2E41 E3S-DS10E41 E3S-DS30E41 E3S-2DE4 E3S-5LE41 E3S-5E42 e3s-ls20 E3S-5DE42 E3S-5DE E3S-LS20XE4

    E3S-R2E43

    Abstract: E3S-2DE41 E3S-DS10E41 E3S-DS30E41 e3s-ls20 omron E3S-R2E41 E3S5LE4 E3S-LS10XE4 E3S-R2E41 E3S-LS20X
    Text: Photoelectric Sensor with Built-in Amplifier E3S CSM_E3S_DS_E_4_1 General-purpose Photoelectric Sensor for High Quality and Reliable Detection Be sure to read Safety Precautions on page 8. Ordering Information General-purpose Sensors Sensing method Appearance


    Original     		PDF E3S-DS10E4 E3S-DS30E4 E3S-2E41 E3S-2LE41 E3S-2DE41 E3S-5E41 E3S-R2E43 E3S-2DE41 E3S-DS10E41 E3S-DS30E41 e3s-ls20 omron E3S-R2E41 E3S5LE4 E3S-LS10XE4 E3S-R2E41 E3S-LS20X

    RE8RB31BU

    Abstract: LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K
    Text: global specialist in energy management The architects of efficiency Singapore Mongolia Price List Catalogue 2013 Electrical Distribution, Automation & Control  ! % 3% %3      3'33,  3 3% %3 (  +3&-=33&2/=


    Original     		PDF 197903476G) MN-EC1113 SG-PL0413 RE8RB31BU LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF 2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116

    433.92 loop antenna

    Abstract: T48C893N sony CR2032 HC-49/U4B small loop antenna GRM1885C1H8R2B GRM1885C1H1R5B ATA8403 868 printed antenna design Impedance Matching
    Text: UHF ASK/FSK Industrial Transmitter ATA8401/ATA8402/ATA8403 1. Introduction The ATA8401/ATA8402/ATA8403 are PLL transmitter ICs, which have been developed for the demands of RF low-cost transmission systems for industrial applications at data rates up to 50 kBit/s ASK and 32 kBit/s FSK modulation scheme. With these


    Original     		PDF ATA8401/ATA8402/ATA8403 ATA8401/ATA8402/ATA8403 ATA8401, ATA8402 ATA8403. 433.92 loop antenna T48C893N sony CR2032 HC-49/U4B small loop antenna GRM1885C1H8R2B GRM1885C1H1R5B ATA8403 868 printed antenna design Impedance Matching

    transistor t07

    Abstract: NEX2303 NE 2301 02cj NEX2300 NEX2301 NEX230187 NEX2302 NEX230265 NEX230365
    Text: NEC/ CALIFORNIA NEC b42?m4 0001202 S 1SE D .7 -3 3 r < 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H PO W ER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with


    OCR Scan     		PDF NEX2300 NEX2300 NEX2301 NEX2302 NEX2303 NEX230365 transistor t07 NE 2301 02cj NEX230187 NEX230265

    NEX2301

    Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
    Text: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with


    OCR Scan     		PDF NEX2300 NEX2300 NEX2301 NEX2302 NEX2303 NEX230365 NEX230187 NEX230265

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OCS31 Optical PNPN Switches GENERAL DESCRIPTION The OCS31 is an optical switch formed by combining a GaAs infrared light emitting diode and a silicon PNPN element that can withstand high voltages. Encased in an 8-pin plastic package, the


    OCR Scan     		PDF OCS31 OCS31 E86831 b72424D 0CS31 L72424D

    HCW51

    Abstract: MX0912B350Y D0310 IEC134
    Text: DISCRETE SEMICONDUCTORS Data shMt a «tatù* Preliminary spedfcation date of Issus July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused em itter ballasting


    OCR Scan     		PDF MX0912B350Y bbS3131 00351Mb HCW51 MX0912B350Y D0310 IEC134

    2SC2338

    Abstract: NE567 NE56787 NE56708 NE56700 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567
    Text: NEC/ CALIFORNIA 15E D bM27M14 0 0 0 14 05 b NE56700 NE56708 NE56787 NPN SILICON HIGH FREQUENCY TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES • HIGH GAIN BANDWIDTH PRODUCT PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 25 VCEO Collector to Emitter Voltage


    OCR Scan     		PDF b427414 T-31-21 NE56700 NE56708 NE56787 NE567 2SC2338 NE56787 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567

    MTA4N60E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA4N60E Fully Isolated TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 600 VOLTS RDS on = 1-20 OHM


    OCR Scan     		PDF MTA4N60E b3b7254 01G3Q01 01G3GG2 MTA4N60E

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TL E 4270 5-V L ow -D rop Fixed V o ltage R egulator Features Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms


    OCR Scan     		PDF Q67000-A9209-A903 P-T0220-5-11 Q67000-A9243-A904 P-T0220-5-12 Q67006-A9201-A901 P-T0263-5-1 Q67000-A9209-A801 P-T0220-5-1 Q67000-A9243-A802 P-T0220-5-2

    La 7676

    Abstract: La 7676 data sheet marking b42 TC-2353 transistor B42 2SB1475 B44 transistor marking B44 marking B43 TRANSISTOR
    Text: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SB1475 PIMP SILICON EPITAXIALTRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION 2SB1475 is designed fo r audio frequency amplifier and switching application, especially in VCR cameras and headphone stereos. FEATURES


    OCR Scan     		PDF 2SB1475 2SB1475 IEI-1209) La 7676 La 7676 data sheet marking b42 TC-2353 transistor B42 B44 transistor marking B44 marking B43 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 023SbOS GOTbbBl IbT 5 -V Lo w -D ro p Fixed V oltage R eg ulato r T L E 4271 Features • • • • • • • • • • Output voltage tolerance < ± 2% Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V


    OCR Scan     		PDF 023SbOS Q67000-A9210 P-T0220-7-1 Q67000-A9244 P-T0220-7-2 Q67006-A9195 P-T0220-7-8 QCHbb47 TLE4271

    ipc8109

    Abstract: IPC8109T
    Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCU ITS /¿P C 8 1 0 6 T , /IP C 8 1 0 9 T 1.9 GHz UPCONVERTER ICs FOR CELLULAR AND CORDLESS TELEPHONES The juPC8106T and /iPC8109T are silicon monolithic integrated circuits designed as upconverter series for


    OCR Scan     		PDF juPC8106T /iPC8109T /iPC8106T /1PC8109T L427SES ipc8109 IPC8109T

    2SC3586

    Abstract: NE68000 2SC3585 NE68035 2SC3587 NE68033 NE680 NE68037 epitaxial micro-x IE68C
    Text: N E C / S 1SE CALIFORNIA E D • 1=427414 QDG143b b tsh t NE68000 NE68033 NE68035 NE68037 NPN SILICON HIGH FREQUENCY TRANSISTOR C FEATURES DESCRIPTION AND APPLICATIONS • HIG H GAIN BANDW IDTH PRODUCT: fr = 10 GHz The NE680 series o f NPN epitaxial silicon transistors is


    OCR Scan     		PDF NE68000 NE68033 NE68035 NE68037 NE680 2SC3586 2SC3585 2SC3587 NE68037 epitaxial micro-x IE68C

    ml4410

    Abstract: 74HC14 oscillator application diagram
    Text: June 1996 MgLMicro Linear ML4410 Sensorless Spindle Motor Controller GENERAL DESCRIPTION The ML4410 provides complete commutation for delta or w ye wound Brushless DC BLDC motors without the need for signals from Hall Effect sensors. This IC senses the back EMF of the 3 motor windings (no neutral


    OCR Scan     		PDF ML4410 ML4410 0DDSR31 74HC14 oscillator application diagram

    49mhz remote control receiver circuit

    Abstract: ka8511 RU43 sd 7809 49mhz transmitter and receiver 9942 sd 8 pin 49mhz remote control transmitter circuit transistor M 7830 transistor 7809 VOLTAGE of 7806 ic
    Text: KA8510/11 LINEAR INTEGRATED CIRCUIT 1 CHIP ANALOG CORDLESS TRANSCEIVER KA8510/11 is a monolithic circuit which can be used for high performance 46/49MHZ MCA type Cordless Phone S ys­ tem. It is a transceiver IC for FM /FSK transmitting/receiving sys­ tem, and is complete one chip FM /FSK transceiver IC of 46/


    OCR Scan     		PDF KA8510/11 KA8510/11 46/49MHZ 49MHz 49mhz remote control receiver circuit ka8511 RU43 sd 7809 49mhz transmitter and receiver 9942 sd 8 pin 49mhz remote control transmitter circuit transistor M 7830 transistor 7809 VOLTAGE of 7806 ic

    1601a

    Abstract: 1B01A SY 356 10PIN CXA1389AQ SBX1601A SBX1602A SMPTE 352 A2JG
    Text: 0 3 0 2 3 0 3 0 0 0 5 5 2 2 b42 « S O N Y SONY Serial Interface/Transmission Encoder Description SBX1601A Package Outline Unit : mm The SBX1601A is a hybrid IC encoder that converts the parallel data into serial form for the purpose of interface or transmission of digital video or audio data.


    OCR Scan     		PDF SBX1601A SBX1601A SBX1602A CXA1389AQ SBX-1601A D00SS4S SBX5601A 1601a 1B01A SY 356 10PIN SMPTE 352 A2JG

    sbx16

    Abstract: No abstract text available
    Text: 0 3 0 2 3 0 3 0 0 0 5 5 2 2 b42 « S O N Y SONY Serial Interface/Transmission Encoder Description SBX1601A Package Outline Unit : mm The SBX1601A is a hybrid IC encoder that converts the parallel data into serial form for the purpose of interface or transmission of digital video or audio data.


    OCR Scan     		PDF SBX1601A SBX1602A CXA1389AQ Q0D5544 fl3A23A3 SBX5601A sbx16

    ad654 spice

    Abstract: DARLINGTON TRANSISTOR ARRAY AD75019
    Text: ANALOG DEVICES INC 51E D • OfllbflQQ 0 0 3 7 3 T M b42 ■ ANA - H7.-e>\ i r ■ MIXED SIGNAL M U M ' >Jlil\Ul' J.;! r l □ Q ANALOG DEVICES * ANALOG DEVICES INC 51E D ■ OfllbBOD 0 0 3 7 3 ^ 5 Table of Contents 1 Summary 2 ASIC Processes 5 LC2MOS Cell Library


    OCR Scan     		PDF

    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135