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    Abstract: No abstract text available
    Text: Philips Components DISCRETE SEMICONDUCTORS Data sheet statue Prelim inary sped location date of lesua July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency.


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    HCW51

    Abstract: MX0912B350Y D0310 IEC134
    Text: DISCRETE SEMICONDUCTORS Data shMt a «tatù* Preliminary spedfcation date of Issus July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused em itter ballasting


    OCR Scan     		MX0912B350Y bbS3131 00351Mb HCW51 MX0912B350Y D0310 IEC134 PDF