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    TRANSISTOR AMPLIFIER 2.5 GHZ Search Results

    TRANSISTOR AMPLIFIER 2.5 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AMPLIFIER 2.5 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fe 8622

    Abstract: 422-371 23A025 521603 18896
    Text: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 23A025 23A025 fe 8622 422-371 521603 18896

    rogers* 4403

    Abstract: rogers 4403 HMC454 HMC454ST89
    Text: V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters General Description The HMC454ST89 is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor HBT ½ watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain


    Original     		PDF HMC454ST89 typically17 40dBm rogers* 4403 rogers 4403 HMC454

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025D CMP2560025D CMPA25 CMPA2560025D

    CMPA2560025F

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025D CMP2560025D CMPA25 CMPA2560025D CMPA2560025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025D CMP2560025D CMPA25 CMPA2560025D

    CRCW08050R0FKEA

    Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
    Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P


    Original     		PDF AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222

    CGHV27100

    Abstract: CGHV27 cree rf
    Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV27100 CGHV27100 CGHV27 GHV27100P cree rf

    cree rf

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV27100 CGHV27100 CGHV27 GHV27100P cree rf

    2SC4390

    Abstract: ITR06668 ITR06669 ITR06670 ITR06671
    Text: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .


    Original     		PDF ENN2958A 2SC4390 2SC4390] 25max VEBO15V) 2SC4390 ITR06668 ITR06669 ITR06670 ITR06671

    2SC5136

    Abstract: Hitachi DSA0014
    Text: 2SC5136 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., NF = 2.5 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5136 2SC5136 Hitachi DSA0014

    Untitled

    Abstract: No abstract text available
    Text: BFP180W NPN Silicon RF Transistor 3  For low-power amplifier in mobile 4 communication systems pager at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz  F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP180W VPS05605 OT343

    ic 2648

    Abstract: No abstract text available
    Text: BFP 180W NPN Silicon RF Transistor 3  For low-power amplifier in mobile 4 communication systems pager at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz  F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 OT-343 Oct-12-1999 ic 2648

    EN5045

    Abstract: 5045-2 2SC5229 sanyo 982 TA-0244
    Text: Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Package Dimensions unit:mm 2038A [2SC5229] 4.5 1.6 1.5 0.4 1.0 2.5 • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=10.5dB typ (f=1GHz).


    Original     		PDF EN5045 2SC5229 2SC5229] S21e2 25max EN5045 5045-2 2SC5229 sanyo 982 TA-0244

    transistor kt 908

    Abstract: ic 4458 51865 TA-0412 sanyo 555 2SC5276 EN5186 SANYO 414 marking mn
    Text: Ordering number:EN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Package Dimensions unit:mm 2110A [2SC5276] 1.9 0.95 0.95 0.5 0.4 4 0.16 3 2.5 0 to 0.1 1.5 • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).


    Original     		PDF EN5186 2SC5276 2SC5276] S21e2 11GHz transistor kt 908 ic 4458 51865 TA-0412 sanyo 555 2SC5276 EN5186 SANYO 414 marking mn

    2SA1224

    Abstract: E90115
    Text: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch­


    OCR Scan     		PDF NE74014 NE90100 NE90115 NE901 665um) 462um) 690um) IS12I 2SA1224 E90115

    Untitled

    Abstract: No abstract text available
    Text: H ITACHI 2SC5136-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fp = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., N F = 2.5 dB typ. at f = 9 00 MHz 1. Emitter


    OCR Scan     		PDF 2SC5136------Silicon 2SC5136

    2SC2351

    Abstract: No abstract text available
    Text: 2SC2351 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in m illim eters inches • Low Noise Figure: NF=1.5 dB TYP. (f= 1.0 GHz) • High Maximum Available Gain: MAG=14dB TYP. (f—1.0 GHz) 2.5 *8 ! {0 098) 0 5 l 8f|


    OCR Scan     		PDF 2SC2351 2SC2351

    2SC5315

    Abstract: No abstract text available
    Text: 2SC5315 TO SH IBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.5 2.5-0.3 + 0.25 • • l<1-5 - 0-15. Low Noise Figure : NF = 1.3 dB (f = 2 GHz)


    OCR Scan     		PDF 2SC5315 2SC5315

    NF NPN Silicon Power transistor TO-3

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF=1.8dB, |S2lel2 = 7.5dB f=2GHz +0.5 2.5-0.3 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC5094 SC-59 NF NPN Silicon Power transistor TO-3

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5315 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Unit in mm + 0.5 2.5-0.3 + 0.25 k 1-5 - ° - 15>i • Low Noise Figure : NF = 1.3dB (f=2GHz) •


    OCR Scan     		PDF 2SC5315 16GHz SC-59

    2SC5094

    Abstract: 6514 TRANSISTOR
    Text: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • NF = 1.8dB, |S2lel2= 7.5dB f = 2GHz Unit in mm 2.5 4 0.5 0.3 • * - MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5094 SC-59 2SC5094 6514 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S04 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz + 0.25 1 5 - 0 . 15 .


    OCR Scan     		PDF MT3S04

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f= 2 GHz + 0.25 1 5 - 0 . 15 .


    OCR Scan     		PDF MT3S03

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm w êf Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0.5 2.5 -0 .3 + 0.25 Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2—7.5dB f —2GHz ^1-5 —0 .1 5 1 «o o


    OCR Scan     		PDF 2SC4322 --j50