fe 8622
Abstract: 422-371 23A025 521603 18896
Text: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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23A025
23A025
fe 8622
422-371
521603
18896
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rogers* 4403
Abstract: rogers 4403 HMC454 HMC454ST89
Text: V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters General Description The HMC454ST89 is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor HBT ½ watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain
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HMC454ST89
typically17
40dBm
rogers* 4403
rogers 4403
HMC454
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Untitled
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
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CMPA2560025F
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
CMPA2560025F
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Untitled
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
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CRCW08050R0FKEA
Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P
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AN10933
BLF7G27LS-150P
IS-95,
BLF7G27LS-150P
CRCW08050R0FKEA
3214W-1-201E
S0805W104K1HRN-P4
BLF7G27-150P
GRM32ER7YA106K88L
GRM31MR71H105K88L
NJM 78L08UA-ND
30RF35
national 2n2222
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CGHV27100
Abstract: CGHV27 cree rf
Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is
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CGHV27100
CGHV27100
CGHV27
GHV27100P
cree rf
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cree rf
Abstract: No abstract text available
Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is
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CGHV27100
CGHV27100
CGHV27
GHV27100P
cree rf
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2SC4390
Abstract: ITR06668 ITR06669 ITR06670 ITR06671
Text: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .
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ENN2958A
2SC4390
2SC4390]
25max
VEBO15V)
2SC4390
ITR06668
ITR06669
ITR06670
ITR06671
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2SC5136
Abstract: Hitachi DSA0014
Text: 2SC5136 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., NF = 2.5 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector
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2SC5136
2SC5136
Hitachi DSA0014
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Untitled
Abstract: No abstract text available
Text: BFP180W NPN Silicon RF Transistor 3 For low-power amplifier in mobile 4 communication systems pager at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP180W
VPS05605
OT343
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ic 2648
Abstract: No abstract text available
Text: BFP 180W NPN Silicon RF Transistor 3 For low-power amplifier in mobile 4 communication systems pager at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05605
OT-343
Oct-12-1999
ic 2648
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EN5045
Abstract: 5045-2 2SC5229 sanyo 982 TA-0244
Text: Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Package Dimensions unit:mm 2038A [2SC5229] 4.5 1.6 1.5 0.4 1.0 2.5 • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=10.5dB typ (f=1GHz).
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EN5045
2SC5229
2SC5229]
S21e2
25max
EN5045
5045-2
2SC5229
sanyo 982
TA-0244
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transistor kt 908
Abstract: ic 4458 51865 TA-0412 sanyo 555 2SC5276 EN5186 SANYO 414 marking mn
Text: Ordering number:EN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Package Dimensions unit:mm 2110A [2SC5276] 1.9 0.95 0.95 0.5 0.4 4 0.16 3 2.5 0 to 0.1 1.5 • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).
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EN5186
2SC5276
2SC5276]
S21e2
11GHz
transistor kt 908
ic 4458
51865
TA-0412
sanyo 555
2SC5276
EN5186
SANYO 414
marking mn
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2SA1224
Abstract: E90115
Text: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch
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NE74014
NE90100
NE90115
NE901
665um)
462um)
690um)
IS12I
2SA1224
E90115
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Untitled
Abstract: No abstract text available
Text: H ITACHI 2SC5136-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fp = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., N F = 2.5 dB typ. at f = 9 00 MHz 1. Emitter
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2SC5136------Silicon
2SC5136
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2SC2351
Abstract: No abstract text available
Text: 2SC2351 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in m illim eters inches • Low Noise Figure: NF=1.5 dB TYP. (f= 1.0 GHz) • High Maximum Available Gain: MAG=14dB TYP. (f—1.0 GHz) 2.5 *8 ! {0 098) 0 5 l 8f|
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2SC2351
2SC2351
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2SC5315
Abstract: No abstract text available
Text: 2SC5315 TO SH IBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.5 2.5-0.3 + 0.25 • • l<1-5 - 0-15. Low Noise Figure : NF = 1.3 dB (f = 2 GHz)
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2SC5315
2SC5315
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NF NPN Silicon Power transistor TO-3
Abstract: No abstract text available
Text: T O SH IB A 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF=1.8dB, |S2lel2 = 7.5dB f=2GHz +0.5 2.5-0.3 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5094
SC-59
NF NPN Silicon Power transistor TO-3
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5315 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Unit in mm + 0.5 2.5-0.3 + 0.25 k 1-5 - ° - 15>i • Low Noise Figure : NF = 1.3dB (f=2GHz) •
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2SC5315
16GHz
SC-59
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2SC5094
Abstract: 6514 TRANSISTOR
Text: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • NF = 1.8dB, |S2lel2= 7.5dB f = 2GHz Unit in mm 2.5 4 0.5 0.3 • * - MAXIMUM RATINGS (Ta = 25°C)
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2SC5094
SC-59
2SC5094
6514 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE MT3S04 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz + 0.25 1 5 - 0 . 15 .
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MT3S04
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE MT3S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f= 2 GHz + 0.25 1 5 - 0 . 15 .
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MT3S03
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm w êf Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0.5 2.5 -0 .3 + 0.25 Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2—7.5dB f —2GHz ^1-5 —0 .1 5 1 «o o
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2SC4322
--j50
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