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    16GHZ Search Results

    16GHZ Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    ADF4372BCCZ-RL7 Analog Devices 62MHz-16GHz wideband PLLVCO Visit Analog Devices Buy
    ADF4372BCCZ Analog Devices 62MHz-16GHz wideband PLLVCO Visit Analog Devices Buy
    ADGM1003BCCZ Analog Devices 16GHz SPDT MEMS Sw Visit Analog Devices Buy
    ADGM1144BCCZ-RL7 Analog Devices DC to 16GHz SP4T MEMS Switch Visit Analog Devices Buy
    ADGM1003BCCZ-RL7 Analog Devices 16GHz SPDT MEMS Sw Visit Analog Devices Buy
    ADGM1121BCCZ-RL7 Analog Devices DC to 16GHz DPDT MEMS Switch Visit Analog Devices Buy
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    16GHZ Price and Stock

    Abracon Corporation ASG-D-V-B-1.24416GHZ

    XTAL OSC VCXO 1.24416GHZ LVDS
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    Mouser Electronics ASG-D-V-B-1.24416GHZ
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    Onlinecomponents.com ASG-D-V-B-1.24416GHZ
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    Abracon Corporation ASG-D-X-B-1.24416GHZ

    XTAL OSC XO 1.24416GHZ LVDS SMD
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    Abracon Corporation ASG-P-V-B-1.24416GHZ

    XTAL OSC VCXO 1.24416GHZ LVPECL
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    Abracon Corporation ASG-P-X-B-1.24416GHZ

    XTAL OSC XO 1.24416GHZ LVPECL
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    Abracon Corporation ASG-P-V-A-1.24416GHZ

    XTAL OSC VCXO 1.24416GHZ LVPECL
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    16GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FMA3011

    Abstract: HEMT MMIC POWER AMPLIFIER MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm 2068 d 05332 214-3556
    Text: FMA3011 FMA3011 12.7GHZ TO 16GHZ MMIC POWER AMPLIFIER Package Style: Bare Die Product Description Features The FMA3011 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic power amplifier with sufficiently high gain to ensure that IMD products from


    Original     		PDF FMA3011 16GHZ FMA3011 FMA3011-000 DS090306 FMA3011-000SQ FMA3011-000S3 HEMT MMIC POWER AMPLIFIER MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm 2068 d 05332 214-3556

    CHA2066

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
    Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20660118 -27-Apr-00 MS11 MS12 MS21 MS22 PS11 PS12 PS22

    CHA2066

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f
    Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20661257 -14-Sept-01 MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f

    CHA6042

    Abstract: No abstract text available
    Text: CHA6042 13–16GHz High Power Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA6042 is a four-stage pHEMT HPA MMIC designed for VSAT ground terminals and other radio applications. The CHA6042 provides 32dBm nominal output power at 1dB gain compression over the 13-16GHz


    Original     		PDF CHA6042 16GHz CHA6042 32dBm 13-16GHz 32dBm 40dBm DSCHA6042218

    infradyne integrated

    Abstract: CHR2391 converter from 6 to 2 GHz
    Text: CHR2391 RoHS COMPLIANT 12-16GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2391 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial


    Original     		PDF CHR2391 12-16GHz CHR2391 10dBm -10dBm DSCHR23915263 infradyne integrated converter from 6 to 2 GHz

    MAR105

    Abstract: CHA2066 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826
    Text: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20660069 MAR105 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826

    Untitled

    Abstract: No abstract text available
    Text: RFSW2045 RFSW2045DC to 16Ghz SP4T pHEMT GaAs Switch DC TO 16GHz SP4T pHEMT GaAs SWITCH Package: QFN, 24 pin, 0.8mm x 4mm x 4mm 6 5 4 3 2 1 7 Features  8 Low Insertion Loss: 2.4dB at 16GHz  High Isolation: 38dB at 16GHz  21ns Switching Speed  GaAs pHEMT Technology


    Original     		PDF RFSW2045 RFSW2045DC 16Ghz 16GHz RFSW2045 DS120530

    Untitled

    Abstract: No abstract text available
    Text: RFUV5945A RFUV5945A Low Noise MMIC VCO with Buffer Amplifier 10GHz to 16GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features            Integrated LPA Image Rejection Mixer LO Buffer Amplifier


    Original     		PDF RFUV5945A RFUV5945A 10GHz 16GHz 32-Pin, DS110331 100nF 10000pF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1548A CPH6020 RF Transistor http://onsemi.com 8V, 150mA, fT=16GHz, NPN Single CPH6 Features • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=16GHz typ (VCE=5V) High gain : |S21e|2=13.5dB typ (f=1GHz) Specifications


    Original     		PDF ENA1548A CPH6020 150mA, 16GHz, 16GHz 250mm2 A1548-6/6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1280A MCH4020 RF Transistor 8V, 150mA, fT=16GHz, NPN Single MCPH4 http://onsemi.com Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=16GHz typ (VCE=5V) High gain : |S21e|2=17.5dB typ (f=1GHz) Halogen free compliance


    Original     		PDF ENA1280A MCH4020 150mA, 16GHz, 16GHz A1280-11/11

    A1601

    Abstract: IT13903
    Text: MCH6001 注文コード No. N A 1 6 0 1 三洋半導体データシート N MCH6001 NPN エピタキシァルプレーナ型シリコン複合トランジスタ 高周波低雑音増幅 特長 ・ 低雑音である ：NF=1.2dB typ（f=1GHz） 。 ・ しゃ断周波数が高い ：fT=16GHz typ（VCE=5V）


    Original     		PDF MCH6001 16GHz S21e2 MCH4020 S21e2 IT13903 IT15151 IT15152 IT13908 A1601 IT13903

    A5052A

    Abstract: AN0017 CHA5052
    Text: CHA5052aQGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052aQGG is a monolithic high power amplifier. UMS A5052A YYWW three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes


    Original     		PDF CHA5052aQGG 7-16GHz CHA5052aQGG A5052A 7-16GHz 37dBm 29dBm 700mA 28LQFN5x5 DSCHA5052aQGG8294 A5052A AN0017 CHA5052

    Untitled

    Abstract: No abstract text available
    Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)


    OCR Scan     		PDF HN3C17FU 16GHz

    HN3C17

    Abstract: No abstract text available
    Text: HN3C17F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C17F Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS 2.8 CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) + 0.2 0.3 - + 0.2 1 .6 -0 .1


    OCR Scan     		PDF HN3C17F 16GHz HN3C17

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5322
    Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : Ga = 10dB (f=2GHz)


    OCR Scan     		PDF 2SC5322 16GHz VHF-UHF Band Low Noise Amplifier 2SC5322

    HN3C17FU

    Abstract: No abstract text available
    Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C17FU HN3C17 16GHz HN3C17FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5320 16GHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05


    OCR Scan     		PDF 2SC5317FT 16GHz S21el2

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN3C18FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : N F = 1.4dB (f=2G H z) • High Gain : |S2 i el2 = 10dB (f=2G H z)


    OCR Scan     		PDF HN3C18FU 16GHz

    Untitled

    Abstract: No abstract text available
    Text: 2SC5315 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2 .5 - 0 . 3 • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


    OCR Scan     		PDF 2SC5315 16GHz

    Untitled

    Abstract: No abstract text available
    Text: 2SC5317 TO SHIBA 2SC5317 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B AN D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


    OCR Scan     		PDF 2SC5317 16GHz

    Untitled

    Abstract: No abstract text available
    Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)


    OCR Scan     		PDF HN3C17FU 16GHz

    2SC5321

    Abstract: No abstract text available
    Text: 2SC5321 TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure High Gain NF = 1.4dB (f = 2GHz) |S2l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5321 16GHz SC-70 006igns, 2SC5321

    2SC5316

    Abstract: No abstract text available
    Text: 2SC5316 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series U nit in mm 2.1 ± 0 .1 ,1.25 ± 0.1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain


    OCR Scan     		PDF 2SC5316 16GHz 2SC5316