2SC4390
Abstract: ITR06668 ITR06669 VEBO-15V
Text: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).
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2SC4390
EN2958B
VEBO15V)
2SC4390
ITR06668
ITR06669
VEBO-15V
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2SC4390
Abstract: ITR06668 ITR06669 ITR06670 ITR06671
Text: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .
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ENN2958A
2SC4390
2SC4390]
25max
VEBO15V)
2SC4390
ITR06668
ITR06669
ITR06670
ITR06671
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VEBO-15V
Abstract: 2SC4390 npn smd 2a
Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V).
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2SC4390
500mA
VEBO-15V
2SC4390
npn smd 2a
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VEBO-15V
Abstract: 2SC4390 EN2958A 2038a
Text: Ordering number:EN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 . · Large current capacity (IC=2A).
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EN2958A
2SC4390
2SC4390]
VEBO15V)
25max
VEBO-15V
2SC4390
EN2958A
2038a
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STK412-750
Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc
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SELT2WA10C
SELT2WC10C
SELT2WD10C
SELT2WE10C
SELT2WF10C
SELT2WH10C
SELT2WJ10C
SELT2WK10C
SELT2WA13C
SELT2WC13C
STK412-750
STK282-170-E
STK350-530t
stk*282-170
STK412 440
stk282 270
STK 412-770
stk412 770
STK282-170-E sanyo
stk433-870
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IC tl 494
Abstract: No abstract text available
Text: Ordering number : EN 2958 2SC4390 No.2958 SA \Y O NPN Epitaxial Planar Silicon Transistor High-hpE, AF Amp Applications F e a tu re s Adoption of MBIT process H igh DC current gain hpE = 800 to 3200 Large current capacity (Ic = 2A) Low collector to emitter saturation voltage (VcE(sat>= 0.3V)
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2SC4390
250mm2
2079MO
2SC4390
IC tl 494
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2SA169
Abstract: 2SC4390 2sc4705 2SC5155
Text: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s
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2SC4909
250mm
2SA1687
2SC4446
2SC4694
2SA125:
2SC3134
2SC469ti
2SC313Í
2SA169
2SC4390
2sc4705
2SC5155
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d5050j
Abstract: 2SC4340 MP40 2SC4382 2SC4387 2SC4392 2SC4353 2SC4347 2SA1671 2SC4354
Text: - 198 - Ta=25‘ C , * E p f i T c = 2 5 £C m 2SC4339 % ?± an 2SC4339—Z 2SC4340 m £ am & VcBO V’cEO (V) (V) (W) (A) « Pc* ÎC (D C } VcB (V) (il (W) 9 1 100 1 9 1 100 1.3 8 1 60 1.3 10 1 80 5 1.5 25 0. 5 1 00 5 1.5 25 100 8 1.5 30 100 10 1.5 HS PSW/PD
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2SC4339
2SC4339-Z
2SC4340
2SC4341
2SC4347
2SC4348
2SC4365
SC-59
2SC4366
O-92MOD)
d5050j
MP40
2SC4382
2SC4387
2SC4392
2SC4353
2SA1671
2SC4354
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2SC4390
Abstract: No abstract text available
Text: Ordering num ber:EN 2958 _ 2 S C 4 3 9 0 No.2958 NPN Epitaxial Planar Silicon Transistor H ig h - h p E , AF Amp Applications F e a tu re s . Adoption of MBIT process • H igh DC current gain hpE = 800 to 3200 • Large current capacity (Ic = 2A)
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2SC4390
--15V)
250mm2
2SC4390
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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mosfet k 2038
Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB
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2SK2170
2SK1068
2SK1069
2SK1332
2SK2219
2SK303
2SK545
2SK771
mosfet k 2038
TO-40-040
PCP MOSFET
2sd1851 TRANSISTOR
transistor 2SA transistor 2 sa 72
2SB1205
2SC5155
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AUDIO AMPLIFIER
Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
Text: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr
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FC150
2SC3651
2SC3650
2SA1766
2SC4705
2SC4390
2SK596
2SK546
2SA1813/2SC4413)
2SK304
AUDIO AMPLIFIER
audio amplifier POWER TRANSISTORS
2SK404
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2sk303
Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Text: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4
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2SA1256
2SA1343
2SA1655
2SK2167
2SK2168
2SK2170
2SK2171
2SK2260
2SK2218
2SK2219
2sk303
2SK283
sk184
SK174
2SK436
2SK848
P/N146071
2sd22
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Untitled
Abstract: No abstract text available
Text: H i gh - hp g High V gg QT r an si s to r s ale Hi g h — hF E, 1 7 A B H ig h — V E B O Ti-ansi s t o r sSANYO:SMCP Case outlines unit:mm SANYO:MCP 1 :B, 2 :E, 3 :C. ” » p 1 i ca t i o n s A tp •+■ *1 « V 1* *—* *—* * High hFE (500 to 3200)
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2SC4909:
250mm
2SC4695
2SA1253
2SC3135
2SA1246
2SC3114
2SC3792
T0-126LP
MT980522TR
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Untitled
Abstract: No abstract text available
Text: SA/iYO Lists for- T y p e No. 2SA type_ Type No. ma rk- Package ing 2SA 1252 D • C p E • 2 SA 125 6 C p 2 SA 125 7 G • C p 2 SA 13 3 1 0 • C p A L 2SA1338 C p 2 SA 13 4 1 B L c p 2 SA 134 2 C L c p 2 SA 134 3 D L c p 2 SA 1344 E L c p
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2SA1338
2SA1508
2SA1573
2SA1580
2SD1048
2SD1618
2SD1619
2SD1620
2SD1621
2SD1622
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