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    Toshiba America Electronic Components MT3S03AT(TE85L,F)

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    Quest Components MT3S03AT(TE85L,F) 2,041
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    MT3S03 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S03A Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT3S03A Toshiba Scan PDF
    MT3S03AFS Toshiba VHF~UHF Band Low-Noise Amplifier Applications Original PDF
    MT3S03AS Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT3S03AS Toshiba Scan PDF
    MT3S03AT Toshiba Scan PDF
    MT3S03AT Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT3S03AU Toshiba Scan PDF
    MT3S03AU Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

    MT3S03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Mounted Devices Three pin SSM type part No. Q1 Q2 MT3S07S MT3S03AS Absolute Maximum Ratings Ta = 25°C


    Original     		MT6L62AE MT3S07S MT3S03AS PDF

    MT3S03AT

    Abstract: 014E 200E 800E
    Text: MT3S03AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S03AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0


    Original     		MT3S03AT MT3S03AT 014E-02 260E-10 800E-13 346E-14 014E 200E 800E PDF

    transistor 14315

    Abstract: 14315
    Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		MT3S03AT transistor 14315 14315 PDF

    MT3S03AFS

    Abstract: DSA0024106
    Text: MT3S03AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AFS Unit: mm Superior performance in oscillator and Buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 5.5 dB f = 2 GHz


    Original     		MT3S03AFS MT3S03AFS DSA0024106 PDF

    MT3S03A

    Abstract: No abstract text available
    Text: MT3S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol


    Original     		MT3S03A SC-59 MT3S03A PDF

    MT3S03A

    Abstract: No abstract text available
    Text: MT3S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		MT3S03A MT3S03A PDF

    of ic 8038

    Abstract: MT3S03AT IC 7486 ic 7815
    Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB typ. (at f = 2 GHz) • High gain: gain = 8dB (typ.) (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		MT3S03AT of ic 8038 MT3S03AT IC 7486 ic 7815 PDF

    MT3S03AFS

    Abstract: No abstract text available
    Text: MT3S03AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AFS Unit: mm Superior performance in oscillator and Buffer applications Superior noise characteristics 0.6±0.05 • • 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 5.5 dB f = 2 GHz


    Original     		MT3S03AFS MT3S03AFS PDF

    MT3S03AU

    Abstract: No abstract text available
    Text: MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		MT3S03AU MT3S03AU PDF

    MT3S03AU

    Abstract: No abstract text available
    Text: MT3S03AU 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03AU ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.4dB, |S21e |2 単位: mm = 8dB f = 2 GHz 絶対最大定格 (Ta = 25°C)


    Original     		MT3S03AU SC-70 MT3S03AU PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		MT3S03AU SC-70 S21e2 PDF

    MT3S03AS

    Abstract: No abstract text available
    Text: MT3S03AS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03AS ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.4dB, |S21e |2 単位: mm = 8dB f = 2 GHz 絶対最大定格 (Ta = 25°C)


    Original     		MT3S03AS MT3S03AS PDF

    MT3S03A

    Abstract: No abstract text available
    Text: MT3S03A 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03A ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • NF = 1.4dB f=2GHz ，|S21e |2 単位: mm = 8dB (f = 2 GHz) 絶対最大定格 (Ta = 25°C) 項 目 記


    Original     		MT3S03A SC-59 MT3S03A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f= 2 GHz + 0.25 1 5 - 0 . 15 .


    OCR Scan     		MT3S03 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f= 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		MT3S03 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S03U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT 3 S 0 3 U V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		MT3S03U PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		MT3S03AU 000707EAA1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB at f = 2 GHz TTirrV» fio i n JJlg ll V ^ U lll


    OCR Scan     		MT3S03AT IS21I2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		MT3S03AU PDF

    MT3S03T

    Abstract: No abstract text available
    Text: TO SHIBA MT3S03T MT3S03T TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ±0.05 • Low Noise Figure : NF = 1.4 dB at f = 2 GHz • High Gain 0.8 ± 0.05 : Gain = 8 dB (at f = 2 GHz)


    OCR Scan     		MT3S03T IS21I2 MT3S03T PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE MT3S03T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0.05 • Low Noise Figure : NF = 1.4 dB at f = 2 GHz • High Gain 0.8 ± 0.05 : Gain = 8 dB (at f = 2 GHz)


    OCR Scan     		MT3S03T PDF

    MT3S03AU

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 2.1 ¿ 0.1 Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz 1 .2 5 Ì0 .1 -EU


    OCR Scan     		MT3S03AU SC-70 000707EAA1 MT3S03AU PDF

    MT3S03AS

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz 1.6 ± 0.2 ,0.8 ±0.1, r—


    OCR Scan     		MT3S03AS 000707EAA1 MT3S03AS PDF

    MT3S03A

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03A TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03A V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		MT3S03A SC-59 000707EAA1 MT3S03A PDF