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    CMPA2560025F Price and Stock

    MACOM CMPA2560025F

    IC RF AMP 2.5GHZ-6GHZ 780019
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    DigiKey CMPA2560025F Tray 28 1
    • 1 $821.58
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    Mouser Electronics CMPA2560025F 3
    • 1 $858.07
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    Richardson RFPD CMPA2560025F 1
    • 1 $953.38
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    MACOM CMPA2560025F-AMP

    CMPA2560025F DEV BOARD WITH HEMT
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    DigiKey CMPA2560025F-AMP Box 2
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    Richardson RFPD CMPA2560025F-AMP 1
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    MACOM CMPA2560025F-TB

    CMPA2560025F-TB
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    Verical CMPA2560025F-TB 2 2
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    Richardson RFPD CMPA2560025F-TB 2 1
    • 1 $550
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    Cree, Inc. CMPA2560025F

    CMPA2560025F
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    South Electronics CMPA2560025F
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    Cree, Inc. CMPA2560025F-TB

    CMPA2560025F-TB
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    CMPA2560025F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CMPA2560025F Cree RF Amplifiers, RF/IF and RFID, IC AMP MMIC HEMT 25W 780019PKG Original PDF
    CMPA2560025F-AMP Wolfspeed CMPA2560025F DEV BOARD WITH HEMT Original PDF
    CMPA2560025F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CKT CMPA2560025F Original PDF

    CMPA2560025F Datasheets Context Search

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    CMPA2560025F

    Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T

    CMPA2560025F

    Abstract: 920pF
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F 920pF

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 6002ree

    CMPA2560025F

    Abstract: CMPA2560025F-TB
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB

    CMPA2560025F

    Abstract: CMPA2560025F-TB JESD22 A114D
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F CMPA2560025F-TB JESD22 A114D

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F

    CMPA2560025F

    Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408
    Text: PRELIMINARY CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408

    CMPA2560025F

    Abstract: CMPA2560025F-TB c08bl242x
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB c08bl242x

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025D CMP2560025D CMPA25 CMPA2560025D

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025D CMP2560025D CMPA25 CMPA2560025D

    CMPA2560025F

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025D CMP2560025D CMPA25 CMPA2560025D CMPA2560025F