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    CMPA25 Search Results

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    CMPA25 Price and Stock

    MACOM CMPA2560025F

    IC RF AMP 2.5GHZ-6GHZ 780019
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA2560025F Tray 28 1
    • 1 $821.58
    • 10 $779.089
    • 100 $779.089
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    Mouser Electronics CMPA2560025F 3
    • 1 $858.07
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    Richardson RFPD CMPA2560025F 1
    • 1 $953.38
    • 10 $953.38
    • 100 $953.38
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    MACOM CMPA2560025D

    25W, GAN MMIC POWER AMPLIFIER, 2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA2560025D Tray 1
    • 1 $750.64
    • 10 $701.418
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    Mouser Electronics CMPA2560025D
    • 1 -
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    Richardson RFPD CMPA2560025D 10
    • 1 -
    • 10 $790.04
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    MACOM CMPA2560025F-AMP

    CMPA2560025F DEV BOARD WITH HEMT
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    DigiKey CMPA2560025F-AMP Box 2
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    Richardson RFPD CMPA2560025F-AMP 1
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    MACOM CMPA2560025F-TB

    CMPA2560025F-TB
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    Verical CMPA2560025F-TB 2 2
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    Richardson RFPD CMPA2560025F-TB 2 1
    • 1 $550
    • 10 $550
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    Cree, Inc. CMPA2560025F

    CMPA2560025F
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    South Electronics CMPA2560025F
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    Find more CMPA25 price and stock on Findchips.com

    CMPA25 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CMPA2560025F Cree RF Amplifiers, RF/IF and RFID, IC AMP MMIC HEMT 25W 780019PKG Original PDF
    CMPA2560025F-AMP Wolfspeed CMPA2560025F DEV BOARD WITH HEMT Original PDF
    CMPA2560025F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CKT CMPA2560025F Original PDF

    CMPA25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMPA2560025F

    Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025D CMP2560025D CMPA25 CMPA2560025D

    CMPA2560025F

    Abstract: 920pF
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F 920pF

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025D CMP2560025D CMPA25 CMPA2560025D

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 6002ree

    CMPA2560025F

    Abstract: CMPA2560025F-TB
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB

    CMPA2560025F

    Abstract: CMPA2560025F-TB JESD22 A114D
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F CMPA2560025F-TB JESD22 A114D

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F

    CMPA2560025F

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025D CMP2560025D CMPA25 CMPA2560025D CMPA2560025F

    CMPA2560025F

    Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408
    Text: PRELIMINARY CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408

    CMPA2560025F

    Abstract: CMPA2560025F-TB c08bl242x
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB c08bl242x

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F

    CMPA0060025F

    Abstract: CMPA0060025F-TB CMPA2560002F JESD22
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F CMPA0060025F-TB CMPA2560002F JESD22

    TBT-06M20

    Abstract: CMPA0060002F SMF3-12 aeroflex SMF3-12
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA00 60002F TBT-06M20 SMF3-12 aeroflex SMF3-12

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F

    TBTH06M20

    Abstract: CMPA0060025F
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F TBTH06M20

    CMPA0060025F

    Abstract: RF-35-0100-CH CMPA0060025F-TB
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F RF-35-0100-CH CMPA0060025F-TB

    TBT-03M1

    Abstract: CMPA0060005F Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F
    Text: PRELIMINARY CMPA0060005F 5 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060005F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060005F CMPA0060005F TBT-03M1 Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F

    cree

    Abstract: CMPA0060025F Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20
    Text: PRELIMINARY CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F cree Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20

    CMPA0060002F

    Abstract: Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH
    Text: PRELIMINARY CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F JESD22
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F JESD22