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    TRANSISTOR AD 829 Search Results

    TRANSISTOR AD 829 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AD 829 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


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    Transistor k163

    Abstract: A6006 K229A L9112 3225 K30 transistor k72 t8 RA53 thermistor CN701 c828 transistor working H9014
    Text: ORDER NO. CPD0010001C0 Notebook Computer CF-72 This is the Service Manual for the following areas. M .for U.S.A. and Canada E .for U.K. G .for Germany F .for France S .for Sweden T .for Italy P .for Spain Model Number Reference The models in the CF-72 series are numbered in accordance with the types of the CPU, LCD


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    PDF CPD0010001C0 CF-72 CF-72 CN703 BLM21A121 SW702 EVQPLDA15 SW703 Transistor k163 A6006 K229A L9112 3225 K30 transistor k72 t8 RA53 thermistor CN701 c828 transistor working H9014

    TEA1060

    Abstract: TEA1081 TEA1081T telephone set
    Text: INTEGRATED CIRCUITS DATA SHEET TEA1081 Supply circuit with power-down for telephone set peripherals Product specification Supersedes data of February 1988 File under Integrated Circuits, IC03 Philips Semiconductors September 1994 Philips Semiconductors Product specification


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    PDF TEA1081 TEA1081 SCD34 413061/1500/02/pp16 TEA1060 TEA1081T telephone set

    magnetic sensor wiring diagram

    Abstract: motion sensor wiring diagram Magnetic Field Sensor magnetic motion sensor TRANSISTOR 612 AG007-07 digital height sensor GMR sensor magnetic position sensor pnp sensor
    Text: Sensor Bulletin GMR Cylinder Position Sensor AG007-07 NVE is pleased to introduce prototypes of its newest sensor product, the AG007-07. This part is an extremely small and highly sensitive magnetic field sensor based on the GMR effect. It is specifically designed for use in position sensing in pneumatic cylinder applications, but


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    PDF AG007-07 AG007-07. May-99 magnetic sensor wiring diagram motion sensor wiring diagram Magnetic Field Sensor magnetic motion sensor TRANSISTOR 612 AG007-07 digital height sensor GMR sensor magnetic position sensor pnp sensor

    transistor SMD DK qs

    Abstract: smd diode marking kda TEA1081
    Text: INTEGRATED CIRCUITS DATA SHEET TEA1081 Supply circuit with power-down for telephone set peripherals Product specification Supersedes data of February 1988 File under Integrated Circuits, IC03 Philips Semiconductors September 1994 Philips Semiconductors Product specification


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    PDF TEA1081 vo970 transistor SMD DK qs smd diode marking kda

    Hitachi transistor

    Abstract: 16-Bit Microcomputers "16-Bit Microcomputers" "Display Controller" hitachi ad "32-Bit Microprocessors" infrared diodes Hitachi laser diodes
    Text: HITACHI ASIA SEMICONDUCTOR & INTEGRATED CIRCUITDIVISION SICD SALES LOCATIONS HITACHI ASIA SEMICONDUCTOR & INTEGRATED CIRCUIT DIVISION PRODUCT RANGE 4-, 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors Smart Card ICs Display Controller/Driver


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    PDF 16-Bit 32-Bit Hitachi transistor 16-Bit Microcomputers "16-Bit Microcomputers" "Display Controller" hitachi ad "32-Bit Microprocessors" infrared diodes Hitachi laser diodes

    13N10

    Abstract: NTP13N10 13N10 mosfet AN569 NTP13N10G
    Text: NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


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    PDF NTP13N10 O-220 NTP13N10/D 13N10 NTP13N10 13N10 mosfet AN569 NTP13N10G

    NTP27N06G

    Abstract: AN569 NTP27N06
    Text: NTP27N06 Power MOSFET 27 Amps, 60 Volts N−Channel TO−220 Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. 27 AMPERES, 60 VOLTS RDS on = 46 mW Features • • • •


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    PDF NTP27N06 O-220 NTP27N06/D NTP27N06G AN569 NTP27N06

    d marking code dpak n10

    Abstract: NTD12N10 369D AN569 NTD12N10T4 NTD12N10T4G T12N10
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode


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    PDF NTD12N10 NTD12N10/D d marking code dpak n10 NTD12N10 369D AN569 NTD12N10T4 NTD12N10T4G T12N10

    mosfet transistor 400 volts.100 amperes

    Abstract: AN569 NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G NTP60N06 NTP60N06G
    Text: NTP60N06, NTB60N06 Power MOSFET 60 V, 60 A, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 60 VOLTS, 60 AMPERES RDS on = 14 mW


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    PDF NTP60N06, NTB60N06 O-220 tpv10 NTP60N06/D mosfet transistor 400 volts.100 amperes AN569 NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G NTP60N06 NTP60N06G

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF730 Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilico n Gate T M O S This TMOS Power FET is designed fo r high vo lt­ age, high speed power sw itching applications such as sw itching regulators, converters, solenoid and


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    PDF IRF730 O-220) GlD273b

    diode sy 162

    Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
    Text: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"


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    transistor dk qh

    Abstract: transistor DK ql HBT2 HBT3 ppg sensor photodiode Rockwell Semiconductor Systems
    Text: Rockwell RÌ0352A Digital CMOS Imager DESCRIPTION FEATURES The Rockwell Ri0352A Digital CMOS Imager DCI chip is one component of Rockwell Sem iconductor’s Universal Serial Bus (USB) camera system. It can also be used as a standalone device for various applications requiring a CIF


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    PDF Ri0352A 10-bit 356Hx292V 352x288) 356x292 354x290 transistor dk qh transistor DK ql HBT2 HBT3 ppg sensor photodiode Rockwell Semiconductor Systems

    HPV-S11

    Abstract: Yamatake hpv-s12 transistor 2248 BA RV HPV-S12 ENV-50140 ENV50140
    Text: OPERATING MODE 'LIGHT ON' 'DARK ON' CATALOG LISTING HPV-S11 HPV-S12 CORD LENGTH CATALOG LISTING LIGHT INDICATOR GREEN CORD LENGTH H P V -S * 2 0 0 0 m in . H P V -S *-L 0 5 5 0 0 0 m in . H P V -S *-L 1 0 10 000m in. POWER INDICATOR (RED) 2 CORD OIL R ESIST 0 2mm


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    PDF HPV-S11 HPV-S12 2000min. 5000min. 10000min. JE099-2014 JE098-2003 JE097-2113 JE095-2007 JE094--2248 Yamatake hpv-s12 transistor 2248 BA RV HPV-S12 ENV-50140 ENV50140

    T02201

    Abstract: at834
    Text: 5V, 750mA Low Dropout Linear Regulator with Lower RESET Threshold D escription The CS8129 is a precision 5V linear reguiator capable o f sourcing 750mA. The RESET threshold voltage has been low ered to 4.2V so that the regulator can be used w ith 4V microprocessors.


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    PDF 750mA CS8129 750mA. CS8129YDW16 CS8129YDWR16 CS8129YT5 CS8129YTHA5 CS8129YTVA5 T0-220 T02201 at834

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor


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    PDF RX1214B170W 7/00/02/pp12

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


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    PDF RX1214B300Y RX1214B300Y OT439A 7/00/02/pp12

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


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    PDF RZ1214B65Y 127147/00/02/pp8

    TRANSISTOR gy 740

    Abstract: transistor AD 829
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT MPSA56 PNP general purpose transistor Product specification Supersedes data of 1998 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor MPSA56 FEATURES


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    PDF MPSA56 MPSA06. 115002/00/04/pp8 TRANSISTOR gy 740 transistor AD 829

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON M O T « ! T E A 7 1 05 VOLTAGE REGULATOR FOR CMOS MICROPROCESSOR BASED SYSTEMS O UTPUT CURRENT : 100 mA ON-CHIP CUR RENT LIMIT AND THERM AL PROTECTION RESETG ENERATOR WITH EXTERNALLY AD­ JUSTABLE DELAY REGULATOR INPUT VOLTAGE LEVEL DE­


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    PDF DIP-16 TEA7105 TEA7105

    BLS2731-10

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -10 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors


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    PDF BLS2731 SC19a BLS2731-10 OT445C 125108/00/03/pp12 BLS2731-10

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


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    PDF RZ1214B35Y 127147/00/02/pp8

    AGP 9805

    Abstract: transistor SMD FLO 14 2222 031 capacitor philips smd transistor GY transistor smd bh smd transistor GY 740 PH smd transistor PH transistor bd139 transistor smd K2 PH BD139
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Jan 08 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1997 Oct 14 PHILIPS Philips Semiconductors Product specification


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    PDF BLV862 SC08a 127047/00/04/pp12 AGP 9805 transistor SMD FLO 14 2222 031 capacitor philips smd transistor GY transistor smd bh smd transistor GY 740 PH smd transistor PH transistor bd139 transistor smd K2 PH BD139

    bvc62

    Abstract: STR 734
    Text: DISCRETE SEMICONDUCTORS IM TÂ mH T BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1996 Jul 26 PHILIPS Philips Semiconductors Product specification


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    PDF BLV859 SC08a OT262B SCA51 127041/1200/02/pp16 bvc62 STR 734