Untitled
Abstract: No abstract text available
Text: LONG LIFE BAND AND NOZZLE HEATERS HBA Series 1" to 6" 3 to 15 cm Wide OnePiece Nozzle Heaters ߜ Nozzle Temps to 1000°F ߜ 42" (107 cm) Leads Standard ߜ Stainless Steel Clamp Included MADE IN USA Offers Longer Life than mica nozzle heaters. Cost less to operate. Heats up
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HBT-30â
HBT-36â
HBT-40â
HBT-45â
HBT-4411â
HBT-50â
HBT-55/*
HBT-65/*
HBT-75/*
HBT-85/*
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Untitled
Abstract: No abstract text available
Text: TGV2204-FC 19 GHz VCO with Prescaler Key Features • • • • • • • • Measured Performance Bias conditions: Vcc = 5 V, Itotal = 165 mA Frequency Range: 18.5 – 19.5 GHz Output Power: 7 dBm @ 19 GHz Phase Noise: -105 dBc/Hz at 1 MHz offset, fc=19 GHz
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TGV2204-FC
TGV2204-FC
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B1354
Abstract: cn0352p Conexant System G24
Text: CN0352 Digital CMOS Imager The Conexant CN0352 Digital CMOS Imager DCI chip is one component of Conexant Universal Serial Bus (USB) camera system. It can also be used as a standalone device for various applications requiring a CIF resolution imager. The
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CN0352
CN0352
10-bit
356Hx292V
352x288)
356x292
354x290
B1354
cn0352p
Conexant System G24
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smd transistor M30
Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Text: 7KH *D$V RXQGU\ +LVWRU\ Since 1975 Infineon Technologies former Siemens Semiconductors) has been engaged in research and development of III-V semiconductor components and circuits. The world‘s first commercially available GaAs MMIC was created by Infineon Technologies in 1981.
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D-81541
smd transistor M30
siemens gaas fet
m30 smd TRANSISTOR
Behet
SIEMENS MICROWAVE RADIO
HBT3
low noise hemt
x-band microwave fet
infineon rf smd package
w-band
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ap 4744
Abstract: S1L50000 SLA5668 S1L50552 5v constant power supply lob mod 8 ring counter using JK flip flop TFA 98... series rm1 4607 circuit diagram dfl 210 epson ink level controller
Text: NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in
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HBT3 triquint
Abstract: cu pillar TGV2204-FC pillar HBT3
Text: TGV2204-FC 19 GHz VCO with Prescaler Key Features • • • • • • • • Measured Performance Bias conditions: Vcc = 5 V, Itotal = 165 mA Frequency Range: 18.5 – 19.5 GHz Output Power: 7 dBm @ 19 GHz Phase Noise: -105 dBc/Hz at 1 MHz offset, fc=19 GHz
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TGV2204-FC
TGV2204-FC
HBT3 triquint
cu pillar
pillar
HBT3
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single phase half bridge controlled rectifier scr
Abstract: RECTIFIER DIODE 1000A 2500V RECTIFIER DIODE 1000A VRRM 2500V BUSBAR calculation datasheet MP03 3 phase scr drive CMP03 HBT300 busbar bolt torque value
Text: MP03 XXX 300 Series MP03 XXX 300 Series Phase Control Dual SCR, SCR/Diode Modules Replaces December 1998 version, DS4482-5.0 DS4482-6.0 January 2000 FEATURES KEY PARAMETERS 1600V VDRM ITSM 10600A IT AV (per arm) 312A 2500V Visol • Dual Device Module ■ Electrically Isolated Package
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DS4482-5
DS4482-6
0600A
MP03/300
single phase half bridge controlled rectifier scr
RECTIFIER DIODE 1000A 2500V
RECTIFIER DIODE 1000A VRRM 2500V
BUSBAR calculation datasheet
MP03
3 phase scr drive
CMP03
HBT300
busbar bolt torque value
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schematic diagram dc-ac inverter
Abstract: ba2p1t ic top 246 yn msi ms 1731 mod 8 ring counter using JK flip flop semiconductor SIM 8309 S1L EPSON SIM 8309 marking CODE GA rx 434 ask
Text: MF1246-04 GATE ARRAY S1L60000 Series DESIGN GUIDE NOTICE No part of this material may be reproduced or duplicated in any from or by any means without the written permission of EPSON. EPSON reserves the right to make changes to this material without notice. EPSON does not assume any liability of any kind arising out of any inaccuracies contained
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MF1246-04
S1L60000
schematic diagram dc-ac inverter
ba2p1t
ic top 246 yn
msi ms 1731
mod 8 ring counter using JK flip flop
semiconductor SIM 8309
S1L EPSON
SIM 8309
marking CODE GA
rx 434 ask
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RECTIFIER DIODE 1000A VRRM 2500V
Abstract: SCR TRIGGER PULSE 3 phase MP03
Text: MP03 XXX 330 Series MP03 XXX 330 Series Phase Control Dual SCR, SCR/Diode Modules Replaces December 1998 version, DS4483-4.0 DS4483-5.0 January 2000 FEATURES KEY PARAMETERS 1200V VDRM ITSM 10600A IT AV (per arm) 334A 2500V Visol • Dual Device Module ■ Electrically Isolated Package
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DS4483-4
DS4483-5
0600A
MP03/330
RECTIFIER DIODE 1000A VRRM 2500V
SCR TRIGGER PULSE 3 phase
MP03
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scr tic 106
Abstract: No abstract text available
Text: MP03 XXX 360 Series MITEL Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 3.2 DS4484-4.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint
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DS4484-4
0600A
MP03/360
scr tic 106
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scr tic 106
Abstract: MTO thyristor HBP MITEL
Text: M ITEL MP03 XXX 330 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 3.2 DS4483-4.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint
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DS4483-4
0600A
MP03/330
scr tic 106
MTO thyristor
HBP MITEL
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Untitled
Abstract: No abstract text available
Text: 4L* R o c k w e ll Semiconductor Systems RÌ0352A Digital CMOS Imager DESCRIPTION FEATURES The Rockwell Ri0352A Digital CMOS Imager DCI chip is one component of Rockwell Semiconductor’s Universal Serial Bus (USB) camera system. It can also be used as a
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Ri0352A
10-bit
356Hx292V
352x288)
356x292
354x290
6001DS
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MTO thyristor
Abstract: thyristor SCR 1000A unial thyristor INR 330 HBP MITEL
Text: MITEL MP03 XXX 330 Series Phase Control Dual SCR, SCR/Diode Modules S E M IC O N D U C T O R Supersedes January 1994 version, 3.2 DS4483-4.0 D ecem ber 1998 FEATURES • ■ ■ ■ ■ Dual Device M odule Electrically Isolated Package Pressure C ontact Construction
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DS4483-4
0600A
MP03/330
50/60HZ
MTO thyristor
thyristor SCR 1000A
unial
thyristor INR 330
HBP MITEL
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transistor dk qh
Abstract: transistor DK ql HBT2 HBT3 ppg sensor photodiode Rockwell Semiconductor Systems
Text: Rockwell RÌ0352A Digital CMOS Imager DESCRIPTION FEATURES The Rockwell Ri0352A Digital CMOS Imager DCI chip is one component of Rockwell Sem iconductor’s Universal Serial Bus (USB) camera system. It can also be used as a standalone device for various applications requiring a CIF
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Ri0352A
10-bit
356Hx292V
352x288)
356x292
354x290
transistor dk qh
transistor DK ql
HBT2
HBT3
ppg sensor photodiode
Rockwell Semiconductor Systems
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Untitled
Abstract: No abstract text available
Text: M ITEL MP03 XXX 360 Series Phase Control Dual SCR, SCR/Diode Modules S E M IC O N D U C T O R Supersedes January 1994 version, 3.2 DS4484-4.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ D ual D e vice M o du le E le c tric a lly Isolated P a ckag e P re s s u re C o n ta c t C o n s tru c tio n
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DS4484-4
0600A
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scr tic 106
Abstract: HBP MITEL
Text: M ITEL MP03 XXX 300 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR DS4482-5.0 December 1998 Supersedes January 1994 version, 4.2 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint
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DS4482-5
0600A
scr tic 106
HBP MITEL
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