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    T12N10 Search Results

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    T12N10 Price and Stock

    IXYS Corporation IXFT12N100

    MOSFET N-CH 1000V 12A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT12N100 Tube 30
    • 1 -
    • 10 -
    • 100 $10.03267
    • 1000 $10.03267
    • 10000 $10.03267
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    Mouser Electronics IXFT12N100
    • 1 -
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    IXYS Corporation IXFT12N100Q

    MOSFET N-CH 1000V 12A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT12N100Q Tube 30
    • 1 -
    • 10 -
    • 100 $14.725
    • 1000 $14.725
    • 10000 $14.725
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    IXYS Corporation IXFT12N100F

    MOSFET N-CH 1000V 12A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT12N100F Tube 30
    • 1 -
    • 10 -
    • 100 $6.76167
    • 1000 $6.76167
    • 10000 $6.76167
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    IXYS Integrated Circuits Division IXFT12N100F

    MOSFET DIS.12A 1000V N-CH TO268(D3PAK) HIPERFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFT12N100F
    • 1 $7.22557
    • 10 $7.22557
    • 100 $6.5687
    • 1000 $6.5687
    • 10000 $6.5687
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    T12N10 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T12N1000COB Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    T12N1000COB Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COB Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COB Vishay Telefunken 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COC Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    T12N1000COC Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COC Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COC Vishay Telefunken 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COE Telefunken Electronic 1.0kV V[drm] Max., 19A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COE Telefunken Electronic 1.0kV V[drm] Max., 19A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COE Vishay Telefunken 1.0kV V[drm] Max., 19A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOB Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOB Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOB Vishay Telefunken 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOC Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOC Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOC Vishay Telefunken 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOE Telefunken Electronic 1.0kV V[drm] Max., 15A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOE Telefunken Electronic 1.0kV V[drm] Max., 15A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOE Vishay Telefunken 1.0kV V[drm] Max., 15A I[T] Max. Silicon Controlled Rectifier Scan PDF

    T12N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t12n10

    Abstract: NTD12N10 12n10 AN569 NTD12N10T4 SMD310 12n10 die
    Text: NTD12N10 Preferred Device Advance Information Power MOSFET 12 Amps, 100 Volts N–Channel Enhancement–Mode DPAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a • • • 12 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V


    Original     		PDF NTD12N10 r14525 NTD12N10/D t12n10 NTD12N10 12n10 AN569 NTD12N10T4 SMD310 12n10 die

    marking n10 fet

    Abstract: NTD12N10
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode


    Original     		PDF NTD12N10 marking n10 fet NTD12N10

    d marking code dpak n10

    Abstract: NTD12N10 369D AN569 NTD12N10T4 NTD12N10T4G T12N10
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode


    Original     		PDF NTD12N10 NTD12N10/D d marking code dpak n10 NTD12N10 369D AN569 NTD12N10T4 NTD12N10T4G T12N10

    marking n10 fet

    Abstract: NTD12N10
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTD12N10 NTD12N10/D marking n10 fet NTD12N10

    N10G

    Abstract: t12n10g NTD12N10G t12 n10g NTD12N10 369D NTD12N10T4 NTD12N10T4G transistor N10G
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTD12N10 NTD12N10/D N10G t12n10g NTD12N10G t12 n10g NTD12N10 369D NTD12N10T4 NTD12N10T4G transistor N10G

    t12n10g

    Abstract: n10g t12 n10g NTD12N10G n10-g NTD12N10 369D AN569 NTD12N10T4G t12n10
    Text: NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTD12N10 NTD12N10/D t12n10g n10g t12 n10g NTD12N10G n10-g NTD12N10 369D AN569 NTD12N10T4G t12n10

    NTD12N10

    Abstract: No abstract text available
    Text: NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTD12N10 NTD12N10/D NTD12N10

    t12n10

    Abstract: NTD12N10
    Text: NTD12N10 Preferred Device Product Preview Power MOSFET 12 Amps, 100 Volts N–Channel Enhancement–Mode DPAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a • • • 12 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V Discrete Fast Recovery Diode


    Original     		PDF NTD12N10 r14525 NTD12N10/D t12n10 NTD12N10

    NTD12N10

    Abstract: AN569 NTD12N10T4 SMD310
    Text: NTD12N10 Preferred Device Advance Information Power MOSFET 12 Amps, 100 Volts N–Channel Enhancement–Mode DPAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a • • • 12 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V


    Original     		PDF NTD12N10 r14525 NTD12N10/D NTD12N10 AN569 NTD12N10T4 SMD310