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    T12N10 Search Results

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    T12N10 Price and Stock

    IXYS Corporation IXFT12N100

    MOSFET N-CH 1000V 12A TO268
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    DigiKey IXFT12N100 Tube 30
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    • 100 $10.03267
    • 1000 $10.03267
    • 10000 $10.03267
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    Mouser Electronics IXFT12N100
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    IXYS Corporation IXFT12N100F

    MOSFET N-CH 1000V 12A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT12N100F Tube 30
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    • 100 $6.76167
    • 1000 $6.76167
    • 10000 $6.76167
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    IXYS Corporation IXFT12N100Q

    MOSFET N-CH 1000V 12A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT12N100Q Tube 30
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    • 100 $14.725
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    Others MLA-YT12N100M-M1

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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange MLA-YT12N100M-M1 175,500
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    Others MLN-YT12N100M-C1

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange MLN-YT12N100M-C1 124,800
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    Find more T12N10 price and stock on Findchips.com

    T12N10 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T12N1000COB Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    T12N1000COB Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COB Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COB Vishay Telefunken 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COC Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    T12N1000COC Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COC Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COC Vishay Telefunken 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COE Telefunken Electronic 1.0kV V[drm] Max., 19A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COE Telefunken Electronic 1.0kV V[drm] Max., 19A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000COE Vishay Telefunken 1.0kV V[drm] Max., 19A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOB Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOB Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOB Vishay Telefunken 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOC Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOC Telefunken Electronic 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOC Vishay Telefunken 1.0kV V[drm] Max., 12A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOE Telefunken Electronic 1.0kV V[drm] Max., 15A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOE Telefunken Electronic 1.0kV V[drm] Max., 15A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T12N1000UOE Vishay Telefunken 1.0kV V[drm] Max., 15A I[T] Max. Silicon Controlled Rectifier Scan PDF

    T12N10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    t12n10

    Abstract: NTD12N10 12n10 AN569 NTD12N10T4 SMD310 12n10 die
    Text: NTD12N10 Preferred Device Advance Information Power MOSFET 12 Amps, 100 Volts N–Channel Enhancement–Mode DPAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a • • • 12 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V


    Original     		NTD12N10 r14525 NTD12N10/D t12n10 NTD12N10 12n10 AN569 NTD12N10T4 SMD310 12n10 die PDF

    marking n10 fet

    Abstract: NTD12N10
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode


    Original     		NTD12N10 marking n10 fet NTD12N10 PDF

    d marking code dpak n10

    Abstract: NTD12N10 369D AN569 NTD12N10T4 NTD12N10T4G T12N10
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode


    Original     		NTD12N10 NTD12N10/D d marking code dpak n10 NTD12N10 369D AN569 NTD12N10T4 NTD12N10T4G T12N10 PDF

    marking n10 fet

    Abstract: NTD12N10
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTD12N10 NTD12N10/D marking n10 fet NTD12N10 PDF

    N10G

    Abstract: t12n10g NTD12N10G t12 n10g NTD12N10 369D NTD12N10T4 NTD12N10T4G transistor N10G
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTD12N10 NTD12N10/D N10G t12n10g NTD12N10G t12 n10g NTD12N10 369D NTD12N10T4 NTD12N10T4G transistor N10G PDF

    t12n10g

    Abstract: n10g t12 n10g NTD12N10G n10-g NTD12N10 369D AN569 NTD12N10T4G t12n10
    Text: NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTD12N10 NTD12N10/D t12n10g n10g t12 n10g NTD12N10G n10-g NTD12N10 369D AN569 NTD12N10T4G t12n10 PDF

    NTD12N10

    Abstract: No abstract text available
    Text: NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTD12N10 NTD12N10/D NTD12N10 PDF

    t12n10

    Abstract: NTD12N10
    Text: NTD12N10 Preferred Device Product Preview Power MOSFET 12 Amps, 100 Volts N–Channel Enhancement–Mode DPAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a • • • 12 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V Discrete Fast Recovery Diode


    Original     		NTD12N10 r14525 NTD12N10/D t12n10 NTD12N10 PDF

    NTD12N10

    Abstract: AN569 NTD12N10T4 SMD310
    Text: NTD12N10 Preferred Device Advance Information Power MOSFET 12 Amps, 100 Volts N–Channel Enhancement–Mode DPAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a • • • 12 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V


    Original     		NTD12N10 r14525 NTD12N10/D NTD12N10 AN569 NTD12N10T4 SMD310 PDF