369D Search Results

369D Result Highlights (5)

Part	Manufacturer	Description
R5F10369DSP#V0	Renesas Electronics Corporation	Compact, Low Power Microcontrollers for General Purpose Applications Ideal for Sub-MCUs
RJK0369DSP-00#J0	Renesas Electronics Corporation	N Channel Power MOSFET
R5F10369DSP#X0	Renesas Electronics Corporation	Compact, Low Power Microcontrollers for General Purpose Applications Ideal for Sub-MCUs
R5F10369DSP#35	Renesas Electronics Corporation	Compact, Low Power Microcontrollers for General Purpose Applications Ideal for Sub-MCUs
R5F10369DSP#55	Renesas Electronics Corporation	Compact, Low Power Microcontrollers for General Purpose Applications Ideal for Sub-MCUs

369D Price and Stock

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Vishay Siliconix SI2369DS-T1-GE3 MOSFET P-CH 30V 7.6A TO236
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2369DS-T1-GE3	Digi-Reel	56,898		1	1 $0.66 10 $0.411 100 $0.66 1000 $0.17909 10000 $0.17909	Buy Now
	SI2369DS-T1-GE3	Cut Tape	56,898		1	1 $0.66 10 $0.411 100 $0.66 1000 $0.17909 10000 $0.17909	Buy Now
	SI2369DS-T1-GE3	Reel	54,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15297	Buy Now
Vishay Siliconix SI2369DS-T1-BE3 P-CHANNEL 30-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2369DS-T1-BE3	Cut Tape	10,453		1	1 $0.66 10 $0.411 100 $0.66 1000 $0.17909 10000 $0.17909	Buy Now
	SI2369DS-T1-BE3	Digi-Reel	10,453		1	1 $0.66 10 $0.411 100 $0.66 1000 $0.17909 10000 $0.17909	Buy Now
	SI2369DS-T1-BE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15297	Buy Now
KEMET Corporation C0603C369D3HACTU CAP CER 3.6PF 25V X8R 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C0603C369D3HACTU	Cut Tape	3,900		1	1 $0.1 10 $0.031 100 $0.0181 1000 $0.0112 10000 $0.0112	Buy Now
KEMET Corporation C0805C369D5GACTU CAP CER 3.6PF 50V C0G/NP0 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C0805C369D5GACTU	Digi-Reel	983		1	1 $0.19 10 $0.121 100 $0.0688 1000 $0.04473 10000 $0.04473	Buy Now
	C0805C369D5GACTU	Cut Tape	983		1	1 $0.19 10 $0.121 100 $0.0688 1000 $0.04473 10000 $0.04473	Buy Now
Avnet Americas	C0805C369D5GACTU	Reel		10 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.04339	Buy Now
Newark	C0805C369D5GACTU	Reel			4,000	1 $0.077 10 $0.077 100 $0.077 1000 $0.077 10000 $0.056	Buy Now
KEMET Corporation C325C369DAG5TA CAP CER 3.6PF 250V C0G/NP0 RAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C325C369DAG5TA	Bulk	498		1	1 $0.89 10 $0.548 100 $0.3662 1000 $0.26977 10000 $0.23058	Buy Now

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369D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TO-251 footprint Abstract: On semiconductor date Code dpak YEAR A TO-251 Outline 369D 369D-01 Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−3 SINGLE GAUGE CASE 369D−01 ISSUE B DATE 03 DEC 2003 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE	Original	369D-01 TO-251 footprint On semiconductor date Code dpak YEAR A TO-251 Outline 369D 369D-01	PDF
Untitled Abstract: No abstract text available Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123BH6PZ Microcontroller D ATA SHE E T D S -T M 4C 123BH6 P Z - 1 5 7 4 1 . 2 7 2 2 S P M S 369D C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are	Original	TM4C123BH6PZ 123BH6	PDF
ndf02n60zg Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com	Original	NDF02N60Z, NDD02N60Z 22-A114) NDF02N60Z/D ndf02n60zg NDD02N60ZT4G g1Dv ndf02n60 NDF02N60Z 60ZG	PDF
A 673 C2 transistor Abstract: tip41 369D-01 Text: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS	Original	MJD41C, NJVMJD41CT4G MJD42C, NJVMJD42CT4G, NJVMJD42CRLG TIP41 TIP42 AEC-Q101 MJD41C/D A 673 C2 transistor 369D-01	PDF
T20P06LG Abstract: P06LG T20 P06LG 20p06 NTDV20P06L marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg Text: NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − NTDV20P06L These Devices are Pb−Free and are RoHS Compliant	Original	NTD20P06L, NTDV20P06L NTD20P06L/D T20P06LG P06LG T20 P06LG 20p06 marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg	PDF
NJVMJD31CT4G Abstract: NJVMJD31T4G Text: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com	Original	MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G TIP31 NJVMJD31CT4G NJVMJD31T4G	PDF
NDF05N50ZG Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G Text: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant	Original	NDF05N50Z, NDD05N50Z JESD22-A114) NDF05N50Z/D NDF05N50ZG NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G	PDF
6414a Abstract: No abstract text available Text: NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS on High Current Capability 100% Avalanche Tested AEC Q101 Qualified − NVD6414AN These Devices are Pb−Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)	Original	NTD6414AN, NVD6414AN NTD6414AN/D 6414a	PDF
3055V Abstract: MTD3055VT4 MTD3055V 369D AN569 Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power	Original	MTD3055V MTD3055V/D 3055V MTD3055VT4 MTD3055V 369D AN569	PDF
P369 MKT Abstract: No abstract text available Text: Pilkor components Metallized Polyester film capacitors PCMT 369 MKT RADIAL LACQUERED CAPACITORS Dipped Type - BROWN Pitch 10.0/15.0/20.0/22.5/27.5 mm (reduced pitch ; 7.5mm) QUICK REFERENCE DATA Capacitance range (E12 series) 0.01 to 10㎌ Capacitance tolerance	Original	UL94V-0 P369 MKT	PDF
Untitled Abstract: No abstract text available Text: NDD60N900U1 Product Preview N-Channel Power MOSFET 600 V, 900 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 900 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise	Original	NDD60N900U1 NDD60N900U1/D	PDF
Untitled Abstract: No abstract text available Text: NDD60N745U1 Product Preview N-Channel Power MOSFET 600 V, 745 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 745 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise	Original	NDD60N745U1 NDD60N745U1/D	PDF
25P03L Abstract: 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G Text: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast	Original	NTD25P03L NTD25P03L/D 25P03L 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G	PDF
MJD44H11G Abstract: 369D MJD44H11 MJD44H11RLG MJD44H11T4G MJD44H11T5G MJD45H11 A 673 C2 transistor Text: MJD44H11 NPN MJD45H11 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.	Original	MJD44H11 MJD45H11 D44H/D45H MJD44H11/D MJD44H11G 369D MJD44H11 MJD44H11RLG MJD44H11T4G MJD44H11T5G MJD45H11 A 673 C2 transistor	PDF

1N5825 Abstract: 369D MJD112 MJD112G MJD117 MSD6100 TIP31 TIP32 MJD117-1G Text: MJD112 NPN MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,	Original	MJD112 MJD117 TIP31 TIP32 MJD112/D 1N5825 369D MJD112 MJD112G MJD117 MSD6100 MJD117-1G	PDF
369D Abstract: NTD5805NG NTD5805NT4G W473 5805N Text: NTD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous	Original	NTD5805N NTD5805N/D 369D NTD5805NG NTD5805NT4G W473 5805N	PDF
04NG Abstract: 48 04NG 4804NG 369D Text: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices	Original	NTD4804NA NTD4804NA/D 04NG 48 04NG 4804NG 369D	PDF
16ang Abstract: NTD6416AN 369D NTD6416ANT4G Text: NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS on High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol	Original	NTD6416AN NTD6416AN/D 16ang NTD6416AN 369D NTD6416ANT4G	PDF
58 65NG mosfet Abstract: 65NG 369D NTD5865NT4G Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol	Original	NTD5865N NTD5865N/D 58 65NG mosfet 65NG 369D NTD5865NT4G	PDF
369D Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC Text: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	NTD4857N NTD4857N/D 369D NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC	PDF
mosfet on 09ng Abstract: 09NG 369D NTD4909NT4G 369ad 4909ng Text: NTD4909N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS	Original	NTD4909N NTD4909N/D mosfet on 09ng 09NG 369D NTD4909NT4G 369ad 4909ng	PDF
Untitled Abstract: No abstract text available Text: NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V BR DSS RDS(ON) MAX 600 V 900 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)	Original	NDD60N900U1 NDD60N900U1/D	PDF
mosfet 63ng Abstract: MOSFET 48 63ng 49 63ng NTD4863N Text: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices	Original	NTD4863N NTD4863N/D mosfet 63ng MOSFET 48 63ng 49 63ng NTD4863N	PDF
LM169 Abstract: LM169B LM369 LM369D Text: L M 1 6 9 , L M 3 6 9 * 2 p » E 0 g & + io v 443 - N ( o o 'è ) S (1 3 V S V m £ 1 7 V , O S / i o a d S 1 . 0 m A , CL S 200pF, 7) = 2 5 t ) LM 369D L M 169, L M 369 * 'I' f t 'h 0.7 ±10 2.0 4.0 2.4 6.0 3 ± 8 .0 3 ±12 150 80 160 ±20 4.0 ±25 3.0	OCR Scan	LM169, LM369 CLS200pF, LM369D /lVS30V -10mA 100mW VmS30V LM169 LM169B LM369 LM369D	PDF

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369D Search Results

369D Result Highlights (5)

369D Price and Stock

Vishay Siliconix SI2369DS-T1-GE3

Vishay Siliconix SI2369DS-T1-BE3

KEMET Corporation C0603C369D3HACTU

KEMET Corporation C0805C369D5GACTU

KEMET Corporation C325C369DAG5TA

369D Datasheets Context Search

TO-251 footprint

Untitled

ndf02n60zg

A 673 C2 transistor

T20P06LG

NJVMJD31CT4G

NDF05N50ZG

6414a

3055V

P369 MKT

Untitled

Untitled

25P03L

MJD44H11G

1N5825

369D

04NG

16ang

58 65NG mosfet

369D

mosfet on 09ng

Untitled

mosfet 63ng

LM169