TO-251 footprint
Abstract: On semiconductor date Code dpak YEAR A TO-251 Outline 369D 369D-01
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−3 SINGLE GAUGE CASE 369D−01 ISSUE B DATE 03 DEC 2003 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE
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369D-01
TO-251 footprint
On semiconductor date Code dpak YEAR A
TO-251 Outline
369D
369D-01
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123BH6PZ Microcontroller D ATA SHE E T D S -T M 4C 123BH6 P Z - 1 5 7 4 1 . 2 7 2 2 S P M S 369D C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are
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TM4C123BH6PZ
123BH6
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LM169
Abstract: LM169B LM369 LM369D
Text: L M 1 6 9 , L M 3 6 9 * 2 p » E 0 g & + io v 443 - N ( o o 'è ) S (1 3 V S V m £ 1 7 V , O S / i o a d S 1 . 0 m A , CL S 200pF, 7) = 2 5 t ) LM 369D L M 169, L M 369 * 'I' f t 'h 0.7 ±10 2.0 4.0 2.4 6.0 3 ± 8 .0 3 ±12 150 80 160 ±20 4.0 ±25 3.0
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LM169,
LM369
CLS200pF,
LM369D
/lVS30V
-10mA
100mW
VmS30V
LM169
LM169B
LM369
LM369D
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ndf02n60zg
Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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NDF02N60Z,
NDD02N60Z
22-A114)
NDF02N60Z/D
ndf02n60zg
NDD02N60ZT4G
g1Dv
ndf02n60
NDF02N60Z
60ZG
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A 673 C2 transistor
Abstract: tip41 369D-01
Text: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS
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MJD41C,
NJVMJD41CT4G
MJD42C,
NJVMJD42CT4G,
NJVMJD42CRLG
TIP41
TIP42
AEC-Q101
MJD41C/D
A 673 C2 transistor
369D-01
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T20P06LG
Abstract: P06LG T20 P06LG 20p06 NTDV20P06L marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg
Text: NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − NTDV20P06L These Devices are Pb−Free and are RoHS Compliant
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NTD20P06L,
NTDV20P06L
NTD20P06L/D
T20P06LG
P06LG
T20 P06LG
20p06
marking T20
NTDV20P06LT4G
NTDV20
20P06L
ntd20p06lg
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NJVMJD31CT4G
Abstract: NJVMJD31T4G
Text: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com
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MJD31,
NJVMJD31T4G,
MJD31C,
NJVMJD31CT4G
MJD32,
NJVMJD32T4G,
MJD32C,
NJVMJD32CG,
NJVMJD32CT4G
TIP31
NJVMJD31CT4G
NJVMJD31T4G
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NDF05N50ZG
Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Text: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NDF05N50Z,
NDD05N50Z
JESD22-A114)
NDF05N50Z/D
NDF05N50ZG
NDF05N50
5n50zg
NDD05N50
50ZG
NDD05N50Z-1G
NDD05N50ZT4G
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6414a
Abstract: No abstract text available
Text: NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS on High Current Capability 100% Avalanche Tested AEC Q101 Qualified − NVD6414AN These Devices are Pb−Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
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NTD6414AN,
NVD6414AN
NTD6414AN/D
6414a
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3055V
Abstract: MTD3055VT4 MTD3055V 369D AN569
Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055V
MTD3055V/D
3055V
MTD3055VT4
MTD3055V
369D
AN569
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P369 MKT
Abstract: No abstract text available
Text: Pilkor components Metallized Polyester film capacitors PCMT 369 MKT RADIAL LACQUERED CAPACITORS Dipped Type - BROWN Pitch 10.0/15.0/20.0/22.5/27.5 mm (reduced pitch ; 7.5mm) QUICK REFERENCE DATA Capacitance range (E12 series) 0.01 to 10㎌ Capacitance tolerance
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UL94V-0
P369 MKT
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Untitled
Abstract: No abstract text available
Text: NDD60N900U1 Product Preview N-Channel Power MOSFET 600 V, 900 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 900 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise
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NDD60N900U1
NDD60N900U1/D
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Untitled
Abstract: No abstract text available
Text: NDD60N745U1 Product Preview N-Channel Power MOSFET 600 V, 745 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 745 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise
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NDD60N745U1
NDD60N745U1/D
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25P03L
Abstract: 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G
Text: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast
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NTD25P03L
NTD25P03L/D
25P03L
25p03lg
03lg
369D
AN569
NTD25P03L
NTD25P03L1
NTD25P03L1G
NTD25P03LG
NTD25P03LT4G
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13nhg
Abstract: 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices
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NTD4813NH
NTD4813NH/D
13nhg
48 13nhg mosfet
48 13nhg
4813nhg
4813NH
13nhg mosfet
369D
NTD4813NH
NTD4813NHT4G
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1N5825
Abstract: 369D MJD112 MJD112G MJD117 MSD6100 TIP31 TIP32 MJD117-1G
Text: MJD112 NPN MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,
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MJD112
MJD117
TIP31
TIP32
MJD112/D
1N5825
369D
MJD112
MJD112G
MJD117
MSD6100
MJD117-1G
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369D
Abstract: NTD5805NG NTD5805NT4G W473 5805N
Text: NTD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous
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NTD5805N
NTD5805N/D
369D
NTD5805NG
NTD5805NT4G
W473
5805N
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04NG
Abstract: 48 04NG 4804NG 369D
Text: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices
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NTD4804NA
NTD4804NA/D
04NG
48 04NG
4804NG
369D
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16ang
Abstract: NTD6416AN 369D NTD6416ANT4G
Text: NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS on High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol
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NTD6416AN
NTD6416AN/D
16ang
NTD6416AN
369D
NTD6416ANT4G
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58 65NG mosfet
Abstract: 65NG 369D NTD5865NT4G
Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol
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NTD5865N
NTD5865N/D
58 65NG mosfet
65NG
369D
NTD5865NT4G
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369D
Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC
Text: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com
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NTD4857N
NTD4857N/D
369D
NTD4857N
NTD4857N-1G
NTD4857N-35G
NTD4857NT4G
369AC
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mosfet on 09ng
Abstract: 09NG 369D NTD4909NT4G 369ad 4909ng
Text: NTD4909N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS
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NTD4909N
NTD4909N/D
mosfet on 09ng
09NG
369D
NTD4909NT4G
369ad
4909ng
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Untitled
Abstract: No abstract text available
Text: NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V BR DSS RDS(ON) MAX 600 V 900 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
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NDD60N900U1
NDD60N900U1/D
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mosfet 63ng
Abstract: MOSFET 48 63ng 49 63ng NTD4863N
Text: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices
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NTD4863N
NTD4863N/D
mosfet 63ng
MOSFET 48 63ng
49 63ng
NTD4863N
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