TRANSISTOR A114 Search Results

TRANSISTOR A114 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR A114 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Transistor J550 Abstract: j584 transistor Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26H200W03S AFT26H200W03SR6 Transistor J550 j584 transistor	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26P100â	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26P100â	PDF
TRANSISTOR J477 Abstract: J890 Text: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.	Original	AFT23S170â 13SR3 TRANSISTOR J477 J890	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	AFT27S006N AFT27S006NT1	PDF
NI-880XS-2 Abstract: J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S aft18s290-13s AFT18S290 ATC100B0R4BT500XT nichicon HD Text: Document Number: AFT18S290−13S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.	Original	AFT18S290-13S AFT18S290-13SR3 20luding NI-880XS-2 J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S AFT18S290 ATC100B0R4BT500XT nichicon HD	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	AFT27S006N AFT27S006NT1	PDF
j292 Abstract: aft23h200-4s2l Text: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of	Original	AFT23H200-4S2L AFT23H200-4S2LR6 j292	PDF
F35V Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V	PDF
transistor equivalent table c101 Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010N transistor equivalent table c101 KEMET C1206C104K5RACTR CRCW12063301FKEA A03TKlc C1206C104K5RACTR	PDF
MRF6V10010 Abstract: MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 2, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010 MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101	PDF
ATC100B4R7CT500XT Abstract: transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3 ATC100B4R7CT500XT transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955	PDF
transistor 8772 Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22 Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	CGH35030F CGH35030F CGH3503 transistor 8772 8772 transistor 470PF CGH35030-TB JESD22	PDF
transistor 8772 Abstract: Transistor C 4927 8772 transistor CGH35030F Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	CGH35030F CGH35030F CGH3503 transistor 8772 Transistor C 4927 8772 transistor	PDF

A 12-15 GHz High Gain Amplifier Abstract: HEADER RT Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	CGH35030F CGH35030F CGH3503 A 12-15 GHz High Gain Amplifier HEADER RT	PDF
TRANSISTOR A114 Abstract: transistor model list industrial application of DIGITAL TACHOMETER omron h7cx digital tachometer H7CX-AU-N Counter Omron H7CX L111-E1 H7CX-R11 diode a4W Text: Ordering Information List of Models Type Classification External connections Configuration Display digits Settings Power supply voltage Output Contact output SPDT Model H7CX-A114-N 100 to 240 VAC 4 digits Transistor output (SPST) Contact output (SPDT) 11-pin socket	Original	H7CX-A114-N 11-pin H7CX-A114S-N VDC/24 H7CX-A114D1-N H7CX-A11-N H7CX-A11S-N H7CX-A11D1-N H7CX-A11SD1-N TRANSISTOR A114 transistor model list industrial application of DIGITAL TACHOMETER omron h7cx digital tachometer H7CX-AU-N Counter Omron H7CX L111-E1 H7CX-R11 diode a4W	PDF
731 MOSFET Abstract: 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 MMG30XX Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc.	Original	MMG3002NT1/D MMG3002NT1 MMG3002NT1 731 MOSFET 53368 A113 A114 A115 AN1955 ML200C MMG30XX	PDF
ATC100B101JT500XT Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3 Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with	Original	MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 ATC100B101JT500XT T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22	PDF
ATC100B151J Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT	PDF
mrf6vp2600h Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H	PDF
MRF6VP2600H Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT	PDF
ATC100B102JP50XT Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with	Original	MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 20ers, MRF6P9220H ATC100B102JP50XT nippon capacitors JESD22 A114 AN1955 ATC100B101JP500XT Nippon chemi	PDF
N/A9M07 Abstract: No abstract text available Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from	Original	AFT09MS007N AFT09MS007NT1 N/A9M07	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF

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TRANSISTOR A114 Search Results

TRANSISTOR A114 Result Highlights (5)

TRANSISTOR A114 Datasheets Context Search

Transistor J550

Untitled

Untitled

TRANSISTOR J477

Untitled

NI-880XS-2

Untitled

j292

F35V

transistor equivalent table c101

MRF6V10010

ATC100B4R7CT500XT

transistor 8772

transistor 8772

A 12-15 GHz High Gain Amplifier

TRANSISTOR A114

731 MOSFET

ATC100B101JT500XT

ATC100B151J

mrf6vp2600h

MRF6VP2600H

ATC100B102JP50XT

N/A9M07

2N2222A 338