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    AFT23H200 Price and Stock

    NXP Semiconductors AFT23H200-4S2LR6

    RF MOSFET LDMOS 28V NI1230
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    DigiKey AFT23H200-4S2LR6 Reel
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    Rochester Electronics AFT23H200-4S2LR6 8,784 1
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    AFT23H200 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AFT23H200-4S2LR6 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRAN RF 2.3GHZ 45W NI1230-4S2L Original PDF

    AFT23H200 Datasheets Context Search

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    j292

    Abstract: aft23h200-4s2l
    Text: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT23H200-4S2L AFT23H200-4S2LR6 j292

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF