Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ATC100B4R7CT500XT Search Results

    SF Impression Pixel

    ATC100B4R7CT500XT Price and Stock

    Kyocera AVX Components 100B4R7CT500XT

    Silicon RF Capacitors / Thin Film 500volts 4.7pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100B4R7CT500XT 494
    • 1 $4.72
    • 10 $4.06
    • 100 $3.04
    • 1000 $2.45
    • 10000 $2.41
    		Buy Now

    Kyocera AVX Components 100B4R7CT500XTV

    Silicon RF Capacitors / Thin Film 500V 4.7pF Tol 0.25pF Las Mkg Vertical
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 100B4R7CT500XTV Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.98
    • 10000 $2.98
    		Buy Now

    ATC100B4R7CT500XT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10250HS MRF6V10250HSR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-


    Original     		PDF MW7IC915N MW7IC915N MW7IC915NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6

    NI-1230-4H

    Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS

    ATC100B390JT500XT

    Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X

    MRF8P9040N

    Abstract: mrf8p ATC100B820JT RO4350B
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N MRF8P9040NR1 MRF8P9040NBR1 728-its MRF8P9040N mrf8p ATC100B820JT RO4350B

    mrf6v13250h

    Abstract: ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3 mrf6v13250h ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 MRF8P8300HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6V10250HSR3 C1447-0 nh TRANSISTOR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 1, 6/2008 NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10250HS MRF6V10250HSR3 A114 A115 AN1955 C101 JESD22 MRF6V10250HSR3 C1447-0 nh TRANSISTOR

    35d21

    Abstract: MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1 35d21 MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS

    IS680-280

    Abstract: MWE6IC9080N AN3263 AN1977 AN1987 MWE6IC9080NR1 atc100b6r8
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1 IS680-280 AN3263 AN1977 AN1987 atc100b6r8

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation


    Original     		PDF MMRF1004NR1 MMRF1004GNR1 MMRF1004N

    DVB-T Schematic

    Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NBR1 MRF6VP3091N DVB-T Schematic LDMOS DVB-T transistors DVB-T acpr mrf6v3090n

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev. 0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage


    Original     		PDF MW7IC915N 51miconductor MW7IC915NT1

    t490d106k035at

    Abstract: j3068
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 t490d106k035at j3068

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5

    atc100b6r2

    Abstract: KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9170N MRF8S9170NR3 atc100b6r2 KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M

    ATC100B

    Abstract: ATC100B1R0JP500XT KME63VB471M MRF8P9300H AN1955 MRF8P9300HR6 MRF8P9300HSR6 ATC100B200JT500XT ATC100B0R8JP500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6 ATC100B ATC100B1R0JP500XT KME63VB471M MRF8P9300H AN1955 MRF8P9300HSR6 ATC100B200JT500XT ATC100B0R8JP500XT

    AN1955

    Abstract: MRF6V10250HSR3 CRCW251220R NI-780S
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 NOT RECOMMENDED FOR NEW DESIGN N-Channel Enhancement-Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10250HS MRF6V10250HSR3 AN1955 MRF6V10250HSR3 CRCW251220R NI-780S

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation


    Original     		PDF MMRF1004NR1 MMRF1004GNR1 MMRF1004N