ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
DataMRFG35010AN
ATC100A101JP150
GT5040
MRFG35010ANT1
ATC100B101JP500XT
080514R7BBS
ATC100A100JP150X
ATC100A101JP150XT
Transistor Z14
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ATC100B102JP50XT
Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi
Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with
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MRF6P9220HR3
MRFE6P9220HR3.
PCN12895
MRF6P9220HR3
20ers,
MRF6P9220H
ATC100B102JP50XT
nippon capacitors
JESD22
A114
AN1955
ATC100B101JP500XT
Nippon chemi
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with
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MRF6P9220H
MRF6P9220HR3
MRFE6P9220HR3.
PCN12895
MRF6P9220HR3
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Chemi-Con DATE CODES
Abstract: chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 MRF6P9220HR3 Nippon chemi
Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with
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MRF6P9220H
MRF6P9220HR3
MRFE6P9220HR3.
PCN12895
MRF6P9220HR3
Chemi-Con DATE CODES
chemi-con date code
MRFE6P9220HR3
NIPPON CAPACITORS
ATC100B101JT500XT
A114
AN1955
JESD22
Nippon chemi
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RO4350B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
500ating
8/2013Semiconductor,
RO4350B
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nippon capacitors
Abstract: Nippon chemi
Text: Document Number: MRF6P9220H Rev. 3, 8/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with
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Original
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PDF
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MRF6P9220HR3
MRFE6P9220HR3.
PCN12895
MRF6P9220H
MRF6P9220HR3
MRF6P9220H
nippon capacitors
Nippon chemi
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