Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Regulators CJ78M05 Three-terminal positive voltage regulator TO-251-3L TO-252-2L FEATURES Maximum output current IOM: 0.5 A Output voltage VO: 5V Continuous total dissipation
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O-251-3L/TO-252-2L
CJ78M05
O-251-3L
O-252-2L
350mA,
200mA
350mA
100KHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251-3L TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol
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O-251-3L/TO-252-2L
3DD13002
O-251-3L
O-252-2L
Parameter100Î
200mA
200mA,
100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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O-251-3L
3DD13001
O-251-3L
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1N60 MOS
Abstract: 1N60 1N60 mosfet to2513l TO-251-3L 2513L mosfet 1N60
Text: 3VD186600YL 3VD186600YL 高压MOSFET芯片 描述 ¾ 3VD186600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；
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3VD186600YL
3VD186600YL
3VD186600YLN
600VMOS
O-251-3L
250AVDS
30VVDS
600VVGS
1N60 MOS
1N60
1N60 mosfet
to2513l
TO-251-3L
2513L
mosfet 1N60
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Untitled
Abstract: No abstract text available
Text: SVD1N60M/SVD1N60T 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD1N60M/SVD1N60T
O-251-3L
30TYP
O-220-3L
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SVD2N60F
Abstract: SVD4N60
Text: SVD2N60M/SVD2N60F 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD2N60M/SVD2N60F
O-251-3L
O-220F-3L
SVD2N60F
SVD4N60
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
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3VD186600YL
Abstract: 1N60
Text: 3VD186600YL 3VD186600YL 高压MOSFET芯片 描述 Ø 3VD186600YL为采用硅外延工艺制造的N沟道 增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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3VD186600YL
3VD186600YL
3VD186600YLN
600VMOS
O-251-3L
1N60
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BR 1n70
Abstract: 1N70 TO-251-3L
Text: 3VD199700YL 3VD199700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD199700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.
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3VD199700YL
3VD199700YL
O-251-3L
2070m
1900m
BR 1n70
1N70
TO-251-3L
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Diode Equivalent 1N60
Abstract: 1N60 MOS 1N60 SILAN diode 1n60 1N60 silan
Text: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified
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3VD186600YL
3VD186600YL
O-251-3Ltype
Diode Equivalent 1N60
1N60 MOS
1N60 SILAN
diode 1n60
1N60
silan
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ksd 75
Abstract: TO-251-3L jfets discrete igbt
Text: Discrete Through-Hole Products Suffixes Pkg dim MOSFET Bipolar Diode JFETs IGBT Pkg method Qty pcs Reel dia Tape width (inch) (mm) Dim X Tape & Reel 4K 13 64 DO-35 Dim X Bulk 1K n/a n/a DO-41 Glass Dim Tape & Reel 3K 10.5 64 DO-41 Glass Dim Ammo Box 3K n/a
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DO-15
DO-35
DO-41
DO-201AD
DO-201AE
O-251-2L)
O-251-3L)
O-220
ksd 75
TO-251-3L
jfets
discrete igbt
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Untitled
Abstract: No abstract text available
Text: SVD1N70M/SVD1N70T 1A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD1N70M/SVD1N70T
O-251-3L
O-220-3L
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251-3L TO-252-2L FEATURE Power Switching Applications 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter
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O-251-3L/TO-252-2L
3DD13002
O-251-3L
O-252-2L
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors TO-251-3L/TO-252-2L 3DD13003 TRANSISTOR NPN FEATURES Power Switching Applications MAXIMUM RATINGS(TA=25 ℃ unless otherwise noted) Symbol Parameter
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O-251-3L/TO-252-2L
O-251-3L/TO-252-2L
3DD13003
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PDF
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Diode Equivalent 1N60
Abstract: No abstract text available
Text: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 1 3 1-Gate PAD 3-Source PAD ¾ Advanced termination scheme to provide enhanced voltageblocking capability.
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3VD186600YL
3VD186600YL
O-251-3Ltype
250uA
Diode Equivalent 1N60
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SVD2N70
Abstract: No abstract text available
Text: SVD2N70M/SVD2N70F 2A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD2N70M/SVD2N70F
O-251-3L
30TYP
O-220F-3L
SVD2N70
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary Darlington Power Transistors Dpak for Surface Mount Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-251-3L
O-251-3L
MJD112
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SVD2N60F
Abstract: svd2n60 SVD2N60D SVD2N60M SVD2N60T 2A600V 2A-600V TO-251-3L 13105 SVD2N
Text: SVD2N60M/F/T/D 2A600V N沟道增强型场效应管 描述 SVD2N60M/F/T/D N沟道增强型高压功率MOS场效 应晶体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺 技术制造。先进的工艺及条状的原胞设计结构使得该产品
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SVD2N60M/F/T/D
2A600V
SVD2N60M/F/T/D
2A600VRDS
SVD2N60M
O-251-3L
SVD2N60F
O-220F-3L
SVD2N60F
svd2n60
SVD2N60D
SVD2N60M
SVD2N60T
2A-600V
TO-251-3L
13105
SVD2N
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BR 1n70
Abstract: 0.8um 700V mos 1N70
Text: 3VD199700YL 3VD199700YL 高压MOSFET芯片 描述 Ø 3VD199700YL为采用硅外延工艺制造的N沟道增 强型700V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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3VD199700YL
3VD199700YL
3VD199700YLN
700VMOS
O-251-3L
2070m
1900m
556um
440um
BR 1n70
0.8um
700V mos
1N70
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BR 1n70
Abstract: 1N70
Text: 3VD186700YL 3VD186700YL 高压MOSFET芯片 描述 Ø 3VD186700YL为采用硅外延工艺制造的N沟道 增强型700V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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3VD186700YL
3VD186700YL
3VD186700YLN
700VMOS
O-251-3L
BR 1n70
1N70
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PDF
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BR 1n70
Abstract: 4570 1N70 3VD186700YL
Text: 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified
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3VD186700YL
3VD186700YL
O-251-3L
BR 1n70
4570
1N70
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PDF
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Untitled
Abstract: No abstract text available
Text: 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
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3VD186700YL
3VD186700YL
O-251-3L
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thermistor KSD201
Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM
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TS-16949
ISO-14001,
thermistor KSD201
pin configuration NPN transistor BC548
pin configuration transistor BC547 smd packaging
FQPF*7N65C APPLICATIONS
BC547 sot package sot-23
pin configuration pnp smd transistor BC557
DIODE 1N4148 LL-34
pin configuration NPN transistor BC547
BC557 sot-23
BC547 smd
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-251-3L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR
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O-251-3L
MJD122
O-251-3L
TIP122
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