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    SVD2N60F

    Abstract: SVD4N60
    Text: SVD2N60M/SVD2N60F 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		SVD2N60M/SVD2N60F O-251-3L O-220F-3L SVD2N60F SVD4N60 PDF

    SVD2N70

    Abstract: No abstract text available
    Text: SVD2N70M/SVD2N70F 2A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		SVD2N70M/SVD2N70F O-251-3L 30TYP O-220F-3L SVD2N70 PDF

    SVD2N60F

    Abstract: svd2n60 SVD2N60D SVD2N60M SVD2N60T 2A600V 2A-600V TO-251-3L 13105 SVD2N
    Text: SVD2N60M/F/T/D 2A600V N沟道增强型场效应管 描述 SVD2N60M/F/T/D N沟道增强型高压功率MOS场效 应晶体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺 技术制造。先进的工艺及条状的原胞设计结构使得该产品


    Original     		SVD2N60M/F/T/D 2A600V SVD2N60M/F/T/D 2A600VRDS SVD2N60M O-251-3L SVD2N60F O-220F-3L SVD2N60F svd2n60 SVD2N60D SVD2N60M SVD2N60T 2A-600V TO-251-3L 13105 SVD2N PDF