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    1N60 Search Results

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    1N60 Price and Stock

    onsemi FQN1N60CTA

    MOSFET N-CH 600V 300MA TO92-3
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    DigiKey FQN1N60CTA Cut Tape 16,289 1
    • 1 $0.86
    • 10 $0.534
    • 100 $0.86
    • 1000 $0.23991
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    FQN1N60CTA Ammo Pack 14,000 2,000
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    Flip Electronics FQN1N60CTA 10,680
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    Infineon Technologies AG SPB11N60C3ATMA1

    MOSFET N-CH 650V 11A TO263-3
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    DigiKey SPB11N60C3ATMA1 Cut Tape 3,507 1
    • 1 $4.44
    • 10 $2.932
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    SPB11N60C3ATMA1 Digi-Reel 3,507 1
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    • 10 $2.932
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    SPB11N60C3ATMA1 Reel 2,000 1,000
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    Newark SPB11N60C3ATMA1 Bulk 1,956 1
    • 1 $3.66
    • 10 $2.92
    • 100 $2.16
    • 1000 $1.79
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    Vishay Siliconix IRFR1N60APBF

    MOSFET N-CH 600V 1.4A DPAK
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    DigiKey IRFR1N60APBF Tube 3,041 1
    • 1 $2.27
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    New Advantage Corporation IRFR1N60APBF 2,250 1
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    onsemi FCPF11N60

    MOSFET N-CH 600V 11A TO220F
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    DigiKey FCPF11N60 Tube 1,984 1
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    Newark FCPF11N60 Bulk 894 1
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    TME FCPF11N60 147 1
    • 1 $2.45
    • 10 $2.19
    • 100 $1.75
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    Richardson RFPD FCPF11N60 1,000
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    Avnet Asia FCPF11N60 16 Weeks 1,000
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    Avnet Silica FCPF11N60 1,150 17 Weeks 50
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    New Advantage Corporation FCPF11N60 7,050 1
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    Win Source Electronics FCPF11N60 3,000
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    STMicroelectronics STF11N60M2-EP

    MOSFET N-CH 600V 7.5A TO220FP
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    DigiKey STF11N60M2-EP Tube 978 1
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    • 1000 $0.70355
    • 10000 $0.60162
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    STMicroelectronics STF11N60M2-EP 889 1
    • 1 $2.05
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    TME STF11N60M2-EP 1
    • 1 $1.37
    • 10 $1.25
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    1N60 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N60 Changzhou Galaxy Electrical Diode Schottky Diode 40V 0.03A 2DO-35 Original PDF
    1N60 Daesan Electronics GERMANIUM DIODES Original PDF
    1N60 Formosa Schottky Barrier Diode Original PDF
    1N60 Jinan JIFU Semiconductor Diode Schottky Diode 40V 0.03A 2DO-35 Original PDF
    1N60 Kexin Surface Mount Schottky Barrier Diodes Original PDF
    1N60 TY Semiconductor Surface Mount Schottky Barrier Diodes - SOD-323 Original PDF
    1N60 BKC International 50 V, 500 mA, gold bonded germanium diode Scan PDF
    1N60 Crimson Semiconductor GERMANIUM DIODE DO-7 Scan PDF
    1N60 International Semiconductor DIODE FAST RECOVERY RECTIFIER 50V A 2DO-7 REEL Scan PDF
    1N60 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N60 Unknown GOLD BONDED GERMANIUM DIODE Scan PDF
    1N60 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N60 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N60 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    1N60 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N60 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N60 Unknown GE Transistor Specifications Scan PDF
    1N60 Unknown Cross Reference Datasheet Scan PDF
    1N60 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N60 Semitronics Germanium Diodes / Germanium Rectifiers Scan PDF
    ...

    1N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    J607

    Abstract: 1N6036 1N6072A SMCG6036 SMCG6072A SMCJ6036 SMCJ6072A MIL-PRF-19500 SMCG Microsemi
    Text: SMCG6036 thru SMCG6072A, e3 and SMCJ6036 thru SMCJ6072A, e3 Bidirectional Transient Voltage Suppressor SCOTTSDALE DIVISION APPEARANCE These surface mount Transient Voltage Suppressors TVSs are electrically equivalent to the 1N6036 thru 1N6072A JEDEC registered axial-leaded devices. They are are used for


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    SMCG6036 SMCG6072A, SMCJ6036 SMCJ6072A, 1N6036 1N6072A DO-214AB SMCG/J6036 SMCG/J6072A, DO-215AB J607 SMCG6072A SMCJ6072A MIL-PRF-19500 SMCG Microsemi PDF

    1N6073

    Abstract: 1N6073US 1N6074 1N6075 1N6081 1N6081US 1N6081 JANTX
    Text: 1N6073 thru 1N6081 VOIDLESS HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS POWER RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/503 and is ideal for high-reliability applications where a failure cannot be


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    1N6073 1N6081 MIL-PRF19500/503 1N6073US 1N6081US) off750 1N6079, 1N6080 1N6076, 1N6074 1N6075 1N6081 1N6081US 1N6081 JANTX PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N6073-1N6081 • • • • ULTRA FAST RECTIFIERS Metallurgically bonded Ultra fast recovery Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


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    1N6073-1N6081 MIL-PRF-19500, 1N6073 1N6073, 1N6074 1N6075 PDF

    1N5985B

    Abstract: 1N5988B 1N6006B 1N5994B 1N5995B 1N5993B 1N6020B 1N5996B
    Text: Zeners 1N5985B - 1N6025B Zeners 1N5985B - 1N6025B Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Derate above 75°C


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    1N5985B 1N6025B DO-35 1N5986B 1N5987B 1N5988B 1N5989B 1N6006B 1N5994B 1N5995B 1N5993B 1N6020B 1N5996B PDF

    marking code XYl 15

    Abstract: 1N5985B 1N5986B 1N5988B 1N5990B 1N6020B 1N5993B marking code 601 1N5996B 1N5989B
    Text: Zeners 1N5985B - 1N6025B Zeners 1N5985B - 1N6025B Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Derate above 75°C


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    1N5985B 1N6025B DO-35 1N5985B 1N5986B 1N5987B 1N5988B 1N5989B marking code XYl 15 1N5986B 1N5988B 1N5990B 1N6020B 1N5993B marking code 601 1N5996B 1N5989B PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC 1N5988 THRU 1N6016   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • 500 mW Zener Diode 3.3 to 47 Volts Popular DO-35 Package-Small and Rugged Double Slug Construction


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    1N5988 1N6016 DO-35 DO-35 500mW 100mA: PDF

    zener 1.2 v

    Abstract: 1N6008B datasheet List of Zener diode 1N6008B
    Text: 1N6008B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case


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    1N6008B 200mA zener 1.2 v 1N6008B datasheet List of Zener diode 1N6008B PDF

    1N60 diode

    Abstract: germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent
    Text: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC


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    1N60P, 1N60S 40MHz 1N60 diode germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent PDF

    1N6091

    Abstract: lva362A 1N6082 LVA3100A LVA343A LVA347A LVA351A LVA356A LVA368A LVA375A
    Text: LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1N6082 - 1N6091 LVA343A - LVA3100A • Designed for use at low current levels. • Features sharp knees, low leakage, low impedance, and low noise. • Available in the DO-7 glass package and in die form.


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    1N6082 1N6091 LVA343A LVA3100A 1N6082 1N6083 1N6084 1N6085 1N6086 1N6087 1N6091 lva362A LVA3100A LVA347A LVA351A LVA356A LVA368A LVA375A PDF

    jan1n12

    Abstract: 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120
    Text: rectifiers 24 JEDEC 10 Part Number A 1N607, R 1N607A, RA 1N608, R 1N608A, RA 1N609, RA 1N609A, RA 1N612, R 1N612A, RA 1N613, R 1N613A, RA 1N614, R 1N614A, RA 1N115, R 1N1118, R 1N1119, R 1N1120, R 1N1124, R 1N1124A, RA JAN1N1124A/104 1N1125, R 1N1125A, RA


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    1N607, 1N607A, 1N608, 1N608A, 1N609, 1N609A, 1N612, 1N612A, 1N613, 1N613A, jan1n12 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N6036 - 1N6072A series 1N6036 - 1N6072A IN60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES • Stand-off voltage range 6.8 - 200 Volts • Glass Passivated Junction 31.8Min


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    1N6036 1N6072A 1N6072A 1N6057 1N6057A 1N6058* 1N6058A* 1N6059* 1N6059A* PDF

    1N60P

    Abstract: ST60P 1N60S 20PF
    Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1


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    ST60P, ST60S 1N60P 1N60S DO-35-1 DO-35 ST60P ST60P 1N60S 20PF PDF

    1N60P

    Abstract: marking code ma
    Text: 1N60PWS Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION • High reliability 1 Cathode • Low forward voltage and reverse current 2 Anode 1 2 MA APPLICATIONS • For electronic calculator, etc. • Low current rectification and high speed switching


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    1N60PWS OD-323 OD-323 1N60P marking code ma PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


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    1N60Z 1N60Z QW-R502-724 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter


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    1N60/1N60P 1N60P 1-Jan-2006 PDF

    1N60P

    Abstract: No abstract text available
    Text: 1N60PWS SCHOTTKY BARRIER DIODE Features • High reliability • Low forward voltage and reverse current PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • For electronic calculator, etc. • Low current rectification and high speed switching MA


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    1N60PWS OD-323 125WS OD-323 1N60P PDF

    LL60P

    Abstract: 1N60P 20PF
    Text: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage


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    LL60P 1N60P LL60P 1N60P 20PF PDF

    1n60

    Abstract: 1N60P 1N60 Schottky
    Text: MCC 1N60 1N60P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High Reliability Low Reverse Current and Low Forward Voltage Schottky Barrier Rectifier Maximum Ratings • DO-35


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    1N60P DO-35 1N60P 150mA 500mA 250K/W 200mA 1n60 1N60 Schottky PDF

    IN6052A

    Abstract: 1N6062A in6064a 1N6072A 1N6041A 1N6053A in60 1N6054A 1N6045A 1N6039A
    Text: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients


    OCR Scan
    1N6036A 1N6072A 1N6036A 1N6072A DO-13 1N6059A 1N6060A 1N6061A 1N6062A 1N6063A IN6052A in6064a 1N6041A 1N6053A in60 1N6054A 1N6045A 1N6039A PDF

    1N6095

    Abstract: 1N6096 DO-203AA
    Text: 25 Amp Schottky Rectifier 1N60951N6096 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 - 3 2 UNF3A threads 2. Full threads within 2 1 /2 threads. 3. Stud is Cathode. A B C D E F G H J M N P 1,3 .423 -.600 .422 .075 -.163


    OCR Scan
    1N6095â 1N6096 DO-203AA 1N6095 1N6096 DO-203AA PDF

    1N34A reverse recovery

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge


    OCR Scan
    1N34A 1N60A 1N128A 1N198A 1N251 1N270 1N277 1N695A 1N772A 1N933 1N34A reverse recovery PDF

    IN6052A

    Abstract: 1N6036 IN6055A in6064a 1N6058 1N6060 1N6061 1N6067A 1N6068 1N6068A
    Text: 1N6036 thru Microsemi Corp. 1N6072A TRANSIENT Features • 1500 watts peak power dissipation • Available in standoff voltages from 5.5V to 185V • DO-13 hermetically sealed package • Bidirectional • UL recognized 1N6070A] ABSOREITION ZENER Description


    OCR Scan
    1N6036 1N6072A DO-13 1N6070A] 1N6067A 1N6068 1N6068A 1N6069 1n6069a 1n6070 IN6052A 1N6036 IN6055A in6064a 1N6058 1N6060 1N6061 PDF

    1N6072A

    Abstract: 1N6066A
    Text: 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES DO-13 The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients can permanently damage sensitive components. Because o f their high surge capability


    OCR Scan
    1N6036A 1N6072A 1N6072A DO-13 1N6066A PDF

    1N6094

    Abstract: 1N6092 1N6092 JANTX
    Text: 1N5765 1N6092 1N6093 1N6094 ma JAN QUALIFIED HERMETIC LED INDICATORS OPTOELECTRONIC PRODUCTS DIVISION AVAILABLE THROUGH DISTRIBUTION DESCRIPTION: These indicators are hermetically sealed in T O -46 packages. A tinted diffused dome lens provides good on-off contrast


    OCR Scan
    1N5765 1N6092 1N6093 1N6094 100pf M19500/519 M19500/520 1N6094 1N6092 JANTX PDF