3DD13002B
Abstract: BR 610v
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter
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3DD13002B
200mA
200mA,
100mA
3DD13002B
BR 610v
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13002N8D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR
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O-126
3DD13002N8D
O-126
200mA
200mA
100mA
UI9600)
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251-3L TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol
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Original
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O-251-3L/TO-252-2L
3DD13002
O-251-3L
O-252-2L
Parameter100Î
200mA
200mA,
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter
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Original
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O-251/TO-252-2L
3DD13002
O-251
O-252-2L
200mA
200mA,
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/3DD13002B TRANSISTOR（ NPN ） FEATURE Power dissipation PCM : 3DD13002 ： 1.2 W （Tamb=25℃） 3DD13002B： 1 W （Tamb=25℃） Collector current ICM :
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3DD13002/3DD13002B
3DD13002
3DD13002Bï
270TYP
050TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TO-92 TRANSISTOR（NPN） FEATURE 1.EMITTER Power Switching Applications 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter 3. BASE
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3DD13002B
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3DD13002B
Abstract: 3DD13002
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol
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3DD13002B
200mA
200mA,
100mA
3DD13002B
3DD13002
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PDF
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3DD13002
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13002 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range
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O-251
3DD13002
O-251
200mA,
100mA
3DD13002
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PDF
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to-126 transistor
Abstract: 3DD13002 ib40
Text: 3DD13002 3DD13002 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1.BASE Collector current ICM: 1 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 2.COLLECTOR 3.EMITTER 123 TJ, Tstg: -55℃ to +150℃
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3DD13002
O-126
200mA,
100mA
to-126 transistor
3DD13002
ib40
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PDF
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Untitled
Abstract: No abstract text available
Text: 3DD13002B Switch Mode NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO
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3DD13002B
270TYP
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PDF
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3DD13002
Abstract: No abstract text available
Text: MACROBIZES CO., LTD. TO-251 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range
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Original
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O-251
3DD13002
O-251
200mA,
100mA
3DD13002
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1.BASE Collector current 1 A ICM: Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range
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Original
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O-126
3DD13002
O-126
200mA,
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002N46 TRANSISTOR（NPN） TO-92 FEATURE 3ower 6witching $pplications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value
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Original
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3DD13002N46
200mA
200mA,
100mA
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO:
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3DD13002/
3DD13002B
3DD13002:
3DD13002B:
200mA,
100mA
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3DD13002
Abstract: No abstract text available
Text: 华晶分立器件 3DD13002R6 低频放大管壳额定双极型晶体管 1 概述与特点 4.4max 3DD13002R6 硅 NPN 型功率开关晶体管 主要用于低压电子节能灯 电子镇流器的功率开关 电路 其特点如下 高温特性好 开关速度快
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3DD13002R6
O-126
200mA
3DD13002
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3DD13002
Abstract: No abstract text available
Text: 3DD13002 TO-126 Plastic-Encapsulate Transistors Transistor NPN FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :1 A 1.BASE Collector-base voltage 2.COLLECTOR V (BR)CBO :600 V 3.EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS o
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3DD13002
O-126
O-126
100mA
200mA
3DD13002
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-126 • power switching applications 1.BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Value Unit Collector -Base Voltage 600
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Original
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O-126
3DD13002
O-126
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251-3L TO-252-2L FEATURE Power Switching Applications 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter
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Original
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O-251-3L/TO-252-2L
3DD13002
O-251-3L
O-252-2L
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PDF
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3DD13002B
Abstract: No abstract text available
Text: 3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Value 400 600 6.0 1.0
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Original
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3DD13002B
270TYP
3DD13002B
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO:
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O-251
3DD13002
O-251
200mA,
100mA
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PDF
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transistor 3540
Abstract: No abstract text available
Text: 3DD13002 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage
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Original
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O-251/TO-252-2L
3DD13002
O-251
O-252-2L
200mA,
100mA
400VIE
200mA
100AIE
transistor 3540
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hfe1
Abstract: 3DD13002 npn 600v to92
Text: 华晶分立器件 3DD13002 B1 低频放大环境额定双极型晶体管 1 概述与特点 1.5 3DD13002 B1 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器及手机充电器的 功率开关电路 其特点如下 击穿电压高 反向漏电流小
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3DD13002
45max
200mA
200mA,
hfe1
npn 600v to92
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hfe1
Abstract: 3DD13002
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 TO-252-2L FEATURE • power switching applications 1 123 1. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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Original
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O-251/TO-252-2L
3DD13002
O-251
O-252-2L
600VIE
400VIE
200mA
200mA,
100mA
hfe1
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PDF
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npn 600v to92
Abstract: 3DD13002B TRANSISTOR NPN 3DD13002 3DD13002B transistor 600v. 1a. to 92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A
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Original
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3DD13002/
3DD13002B
3DD13002:
3DD13002B:
200mA,
100mA
npn 600v to92
3DD13002B TRANSISTOR NPN
3DD13002
3DD13002B
transistor 600v. 1a. to 92
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