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    SVD4N60

    Abstract: SVD4N60F SVD4N60D 4A,600V 4A600V SVD4N60T svd4n TO-252-2L Silan Semiconductors TO-220F
    Text: SVD4N60D/F/T 4A600V N沟道增强型场效应管 描述 SVD4N60D/F/T N沟道增强型高压功率MOS场效应晶 体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺技术 制造。先进的工艺及条状的原胞设计结构使得该产品具有


    Original     		SVD4N60D/F/T 4A600V SVD4N60D/F/T 4A600VRDS SVD4N60T O-220-3L SVD4N60F O-220F-3L SVD4N60 SVD4N60F SVD4N60D 4A,600V SVD4N60T svd4n TO-252-2L Silan Semiconductors TO-220F PDF

    SVD2N60F

    Abstract: SVD4N60
    Text: SVD2N60M/SVD2N60F 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		SVD2N60M/SVD2N60F O-251-3L O-220F-3L SVD2N60F SVD4N60 PDF