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    THYRISTOR ABB 5STP Search Results

    THYRISTOR ABB 5STP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CR8PM-12B-A8#B00 Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    CR3PM-12G-C#B00 Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    5P4J-Z-AZ Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    CR3PM-12G-AT#B00 Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    5P4J-ZK-E2-AZ Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation

    THYRISTOR ABB 5STP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    thyristor Q 720

    Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200
    Text: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor


    Original     		PDF 1960s, 5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 thyristor Q 720 thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200

    GTO hvdc thyristor

    Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB
    Text: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives


    Original     		PDF 5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 CH-5600 GTO hvdc thyristor 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB

    5STP06D2600

    Abstract: No abstract text available
    Text: Key Parameters VDSM = 2800 ITAVM = 590 ITRMS = 920 ITSM = 8000 VT0 = 0.92 rT = 0.780 V A A A V mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA 1020-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 06D2800 06D2800 06D2600 06D2200 67xVDRM CH-5600 5STP06D2600

    5STP24H2800

    Abstract: ABB 5STP abb S 24H220 24H2600 24H2800
    Text: Key Parameters VDSM = 2800 ITAVM = 2625 ITRMS = 4120 ITSM = 43000 VT0 = 0.85 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA 1047-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 24H2800 24H2800 24H2600 24H2200 67xVDRM CH-5600 5STP24H2800 ABB 5STP abb S 24H220

    ABB 5STP 12

    Abstract: 5STP03A1600
    Text: Key Parameters VDSM = 1800 ITAVM = 325 ITRMS = 510 ITSM = 5000 VT0 = 0.89 rT = 0.850 V A A A V mΩ Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA 1032-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 03A1800 03A1800 03A1600 03A1200 67xVDRM CH-5600 ABB 5STP 12 5STP03A1600

    ABB 5STP 16F2600

    Abstract: 5STP 16F2600 16F2200 5STP 16F2800 16F2800 ABB 5STP 12 5STP16F2200
    Text: Key Parameters VDSM = 2800 ITAVM = 1580 ITRMS = 2480 ITSM = 18000 VT0 = 0.82 rT = 0.370 V A A A V mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA 1022-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 16F2800 16F2800 16F2600 16F2200 67xVDRM CH-5600 ABB 5STP 16F2600 5STP 16F2600 5STP 16F2800 ABB 5STP 12 5STP16F2200

    21F1400

    Abstract: 5STP21F1200 abb 26000
    Text: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 21F1400 21F1400 21F1200 21F0800 67xVDRM CH-5600 5STP21F1200 abb 26000

    5STP 07D1200

    Abstract: 5STP 07D1600 5STP07D1600 07d18
    Text: Key Parameters VDSM = 1800 ITAVM = 700 ITRMS = 1090 ITSM = 9000 VT0 = 0.80 rT = 0.540 V A A A V mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA 1027-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 07D1800 07D1800 07D1600 07D1200 67xVDRM CH-5600 5STP 07D1200 5STP 07D1600 5STP07D1600 07d18

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDSM = 1800 ITAVM = 325 510 ITRMS = ITSM = 5000 VT0 = 0.89 = 0.850 rT V A A A V mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA 1032-01 August, 00 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 03A1800 03A1800 03A1600 03A1200 67xVDRM CH-5600

    thyristor ABB 5stp 18f1600

    Abstract: No abstract text available
    Text: Key Parameters VDSM = 1800 ITAVM = 1845 ITRMS = 2890 ITSM = 21000 VT0 = 0.83 rT = 0.230 V A A A V mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA 1028-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 18F1800 18F1800 18F1600 18F1200 67xVDRM CH-5600 thyristor ABB 5stp 18f1600

    5stp18h4200

    Abstract: 18H3600
    Text: Key Parameters VDSM = 4200 ITAVM = 2075 ITRMS = 3260 ITSM = 32000 VT0 = 0.96 rT = 0.285 V A A A V mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA 1046-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 18H4200 18H4200 18H4000 18H3600 67xVDRM CH-5600 5stp18h4200

    ABB 4600

    Abstract: ABB 5STP 12 5STP12F4200 5STP 12F4200
    Text: Key Parameters VDSM = 4200 ITAVM = 1225 ITRMS = 1920 ITSM = 15000 VT0 = 0.95 rT = 0.575 V A A A V mΩ Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA 1021-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 12F4200 12F4200 12F4000 12F3600 67xVDRM CH-5600 ABB 4600 ABB 5STP 12 5STP12F4200 5STP 12F4200

    5STP 27H1800

    Abstract: 27H1200 27H1800
    Text: Key Parameters VDSM = 1800 ITAVM = 3000 ITRMS = 4710 ITSM = 47000 VT0 = 0.88 rT = 0.103 V A A A V mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA 1048-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 27H1800 27H1800 27H1600 27H1200 67xVDRM CH-5600 5STP 27H1800

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDSM = 4200 ITAVM = 425 ITRMS = 660 ITSM = 6400 VT0 = 1.00 rT = 1.500 V A A A V mΩ Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA 1025-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 04D4200 04D4200 04D4000 04D3600 67xVDRM CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDSM = 2800 V ITAVM = 620 A ITRMS = 970 A ITSM = 8000 A VT0 = 0.92 V rT = 0.780 mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 06D2800 5SYA1020-04 06D2800 06D2600 06D2200 67xVDRM CH-5600

    07D18

    Abstract: 5STP 07D1600
    Text: VDSM = 1800 V ITAVM = 730 A ITRMS = 1150 A ITSM = 9000 A VT0 = 0.80 V rT = 0.540 mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA1027-05 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 07D1800 5SYA1027-05 07D1800 07D1600 07D1200 67xVDRM CH-5600 07D18 5STP 07D1600

    5STP04D5200

    Abstract: 04D5200
    Text: Key Parameters VDSM = 5200 ITAVM = 400 ITRMS = 628 ITSM = 5000 VT0 = 1.20 rT = 1.600 V A A A V mΩ Phase Control Thyristor 5STP 04D5200 Doc. No. 5SYA 1026-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 04D5200 04D5200 04D5000 04D4600 67xVDRM CH-5600 5STP04D5200

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDSM = 6500 ITAVM = 350 ITRMS = 550 ITSM = 4500 VT0 = 1.20 rT = 2.300 V A A A V mΩ Phase Control Thyristor 5STP 03X6500 Doc. No. 5SYA 1003-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 03X6500 03X6500 03X6200 03X5800 67xVDRM CH-5600

    08G6500

    Abstract: 5STP 08G6500
    Text: Key Parameters VDSM = 6500 ITAVM = 815 ITRMS = 1270 ITSM = 11600 VT0 = 1.22 rT = 0.970 V A A A V mΩ Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA 1006-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 08G6500 08G6500 08G6200 08G5800 67xVDRM CH-5600 5STP 08G6500

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDSM = 8500 ITAVM = 1150 ITRMS = 1806 ITSM = 35000 VT0 = 1.25 rT = 0.480 V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Preliminary Doc. No. 5SYA 1044-01 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 12N8500 12N8500 12N8200 12N7800 67xVDRM CH-5600

    5STP42U6500

    Abstract: 42u6200 6594
    Text: Key Parameters VDSM = 6500 ITAVM = 4200 ITRMS = 6594 ITSM = 67500 VT0 = 1.13 rT = 0.185 V A A A V mΩ Phase Control Thyristor 5STP 42U6500 Preliminary Doc. No. 5SYA 1043-01 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 42U6500 42U6500 42U6200 42U5800 67xVDRM CH-5600 5STP42U6500 6594

    5stp38n4000

    Abstract: 38N4200 38n3
    Text: Key Parameters VDSM = 4200 ITAVM = 3750 ITRMS = 5880 ITSM = 60000 VT0 = 0.95 rT = 0.130 V A A A V mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA 1012-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 38N4200 38N4200 38N4000 38N3600 67xVDRM CH-5600 5stp38n4000 38n3

    c 30275

    Abstract: 03A1600 5STP 03A1200
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 325 A 510 A 5000 A 0.89 V 0.850 mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA1032-01 Sep. 01 • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking


    Original     		PDF 03A1800 5SYA1032-01 03A1800 03A1600 03A1200 CH-5600 c 30275 5STP 03A1200

    06D2

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 620 A 970 A 8000 A 0.92 V 0.780 mΩ Ω Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 06D2800 5SYA1020-04 06D2800 06D2600 06D2200 CH-5600 06D2