thyristor Q 720
Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200
Text: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor
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1960s,
5SYA2006
5SYA2020
5SYA2034
5SYA2036
5SYA2048
5SYA2049
5SYA2051
5SZK9104
5SZK9105
thyristor Q 720
thyristor N 600 ch 14
GTO hvdc thyristor
5STP03D6500
ABB thyristors
abb phase control thyristors
13N65
field controlled thyristor
5stp
5STP25M5200
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GTO hvdc thyristor
Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB
Text: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives
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5SYA2006
5SYA2020
5SYA2034
5SYA2036
5SYA2048
5SYA2049
5SYA2051
5SZK9104
5SZK9105
CH-5600
GTO hvdc thyristor
5STP 57U4200
abb thyristors
5STP03D6500
6" thyristor for HVDC
field controlled thyristor
ABB Thyristor
Field measurements on High Power Press Pack Semiconductors
5STP20N8500
GTO thyristor ABB
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5STP06D2600
Abstract: No abstract text available
Text: Key Parameters VDSM = 2800 ITAVM = 590 ITRMS = 920 ITSM = 8000 VT0 = 0.92 rT = 0.780 V A A A V mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA 1020-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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06D2800
06D2800
06D2600
06D2200
67xVDRM
CH-5600
5STP06D2600
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5STP24H2800
Abstract: ABB 5STP abb S 24H220 24H2600 24H2800
Text: Key Parameters VDSM = 2800 ITAVM = 2625 ITRMS = 4120 ITSM = 43000 VT0 = 0.85 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA 1047-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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24H2800
24H2800
24H2600
24H2200
67xVDRM
CH-5600
5STP24H2800
ABB 5STP
abb S
24H220
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ABB 5STP 12
Abstract: 5STP03A1600
Text: Key Parameters VDSM = 1800 ITAVM = 325 ITRMS = 510 ITSM = 5000 VT0 = 0.89 rT = 0.850 V A A A V mΩ Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA 1032-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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03A1800
03A1800
03A1600
03A1200
67xVDRM
CH-5600
ABB 5STP 12
5STP03A1600
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ABB 5STP 16F2600
Abstract: 5STP 16F2600 16F2200 5STP 16F2800 16F2800 ABB 5STP 12 5STP16F2200
Text: Key Parameters VDSM = 2800 ITAVM = 1580 ITRMS = 2480 ITSM = 18000 VT0 = 0.82 rT = 0.370 V A A A V mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA 1022-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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16F2800
16F2800
16F2600
16F2200
67xVDRM
CH-5600
ABB 5STP 16F2600
5STP 16F2600
5STP 16F2800
ABB 5STP 12
5STP16F2200
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21F1400
Abstract: 5STP21F1200 abb 26000
Text: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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21F1400
21F1400
21F1200
21F0800
67xVDRM
CH-5600
5STP21F1200
abb 26000
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5STP 07D1200
Abstract: 5STP 07D1600 5STP07D1600 07d18
Text: Key Parameters VDSM = 1800 ITAVM = 700 ITRMS = 1090 ITSM = 9000 VT0 = 0.80 rT = 0.540 V A A A V mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA 1027-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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07D1800
07D1800
07D1600
07D1200
67xVDRM
CH-5600
5STP 07D1200
5STP 07D1600
5STP07D1600
07d18
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDSM = 1800 ITAVM = 325 510 ITRMS = ITSM = 5000 VT0 = 0.89 = 0.850 rT V A A A V mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA 1032-01 August, 00 Features • Patented free-floating silicon technology • Low on-state and switching losses
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03A1800
03A1800
03A1600
03A1200
67xVDRM
CH-5600
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thyristor ABB 5stp 18f1600
Abstract: No abstract text available
Text: Key Parameters VDSM = 1800 ITAVM = 1845 ITRMS = 2890 ITSM = 21000 VT0 = 0.83 rT = 0.230 V A A A V mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA 1028-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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18F1800
18F1800
18F1600
18F1200
67xVDRM
CH-5600
thyristor ABB 5stp 18f1600
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5stp18h4200
Abstract: 18H3600
Text: Key Parameters VDSM = 4200 ITAVM = 2075 ITRMS = 3260 ITSM = 32000 VT0 = 0.96 rT = 0.285 V A A A V mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA 1046-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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18H4200
18H4200
18H4000
18H3600
67xVDRM
CH-5600
5stp18h4200
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ABB 4600
Abstract: ABB 5STP 12 5STP12F4200 5STP 12F4200
Text: Key Parameters VDSM = 4200 ITAVM = 1225 ITRMS = 1920 ITSM = 15000 VT0 = 0.95 rT = 0.575 V A A A V mΩ Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA 1021-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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12F4200
12F4200
12F4000
12F3600
67xVDRM
CH-5600
ABB 4600
ABB 5STP 12
5STP12F4200
5STP 12F4200
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5STP 27H1800
Abstract: 27H1200 27H1800
Text: Key Parameters VDSM = 1800 ITAVM = 3000 ITRMS = 4710 ITSM = 47000 VT0 = 0.88 rT = 0.103 V A A A V mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA 1048-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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27H1800
27H1800
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27H1200
67xVDRM
CH-5600
5STP 27H1800
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Abstract: No abstract text available
Text: Key Parameters VDSM = 4200 ITAVM = 425 ITRMS = 660 ITSM = 6400 VT0 = 1.00 rT = 1.500 V A A A V mΩ Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA 1025-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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04D4200
04D4200
04D4000
04D3600
67xVDRM
CH-5600
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Untitled
Abstract: No abstract text available
Text: VDSM = 2800 V ITAVM = 620 A ITRMS = 970 A ITSM = 8000 A VT0 = 0.92 V rT = 0.780 mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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06D2800
5SYA1020-04
06D2800
06D2600
06D2200
67xVDRM
CH-5600
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07D18
Abstract: 5STP 07D1600
Text: VDSM = 1800 V ITAVM = 730 A ITRMS = 1150 A ITSM = 9000 A VT0 = 0.80 V rT = 0.540 mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA1027-05 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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07D1800
5SYA1027-05
07D1800
07D1600
07D1200
67xVDRM
CH-5600
07D18
5STP 07D1600
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5STP04D5200
Abstract: 04D5200
Text: Key Parameters VDSM = 5200 ITAVM = 400 ITRMS = 628 ITSM = 5000 VT0 = 1.20 rT = 1.600 V A A A V mΩ Phase Control Thyristor 5STP 04D5200 Doc. No. 5SYA 1026-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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04D5200
04D5200
04D5000
04D4600
67xVDRM
CH-5600
5STP04D5200
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDSM = 6500 ITAVM = 350 ITRMS = 550 ITSM = 4500 VT0 = 1.20 rT = 2.300 V A A A V mΩ Phase Control Thyristor 5STP 03X6500 Doc. No. 5SYA 1003-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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03X6500
03X6500
03X6200
03X5800
67xVDRM
CH-5600
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08G6500
Abstract: 5STP 08G6500
Text: Key Parameters VDSM = 6500 ITAVM = 815 ITRMS = 1270 ITSM = 11600 VT0 = 1.22 rT = 0.970 V A A A V mΩ Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA 1006-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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08G6500
08G6500
08G6200
08G5800
67xVDRM
CH-5600
5STP 08G6500
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Abstract: No abstract text available
Text: Key Parameters VDSM = 8500 ITAVM = 1150 ITRMS = 1806 ITSM = 35000 VT0 = 1.25 rT = 0.480 V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Preliminary Doc. No. 5SYA 1044-01 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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12N8500
12N8500
12N8200
12N7800
67xVDRM
CH-5600
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5STP42U6500
Abstract: 42u6200 6594
Text: Key Parameters VDSM = 6500 ITAVM = 4200 ITRMS = 6594 ITSM = 67500 VT0 = 1.13 rT = 0.185 V A A A V mΩ Phase Control Thyristor 5STP 42U6500 Preliminary Doc. No. 5SYA 1043-01 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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42U6500
42U6500
42U6200
42U5800
67xVDRM
CH-5600
5STP42U6500
6594
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5stp38n4000
Abstract: 38N4200 38n3
Text: Key Parameters VDSM = 4200 ITAVM = 3750 ITRMS = 5880 ITSM = 60000 VT0 = 0.95 rT = 0.130 V A A A V mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA 1012-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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38N4200
38N4200
38N4000
38N3600
67xVDRM
CH-5600
5stp38n4000
38n3
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c 30275
Abstract: 03A1600 5STP 03A1200
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 325 A 510 A 5000 A 0.89 V 0.850 mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA1032-01 Sep. 01 • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking
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03A1800
5SYA1032-01
03A1800
03A1600
03A1200
CH-5600
c 30275
5STP 03A1200
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06D2
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 620 A 970 A 8000 A 0.92 V 0.780 mΩ Ω Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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06D2800
5SYA1020-04
06D2800
06D2600
06D2200
CH-5600
06D2
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