thyristor ABB 5stp 18f1600
Abstract: No abstract text available
Text: Key Parameters VDSM = 1800 ITAVM = 1845 ITRMS = 2890 ITSM = 21000 VT0 = 0.83 rT = 0.230 V A A A V mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA 1028-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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18F1800
18F1800
18F1600
18F1200
67xVDRM
CH-5600
thyristor ABB 5stp 18f1600
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Untitled
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 1660 A 2610 A 21000 A 0.83 V 0.230 mΩ Ω Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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18F1800
5SYA1028-04
18F1800
18F1600
18F1200
CH-5600
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5STP 18F1200
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 1660 A 2610 A 21000 A 0.83 V 0.23 mΩ Ω Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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18F1800
5SYA1028-04
18F1600
18F1200
CH-5600
5STP 18F1200
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V1660
Abstract: No abstract text available
Text: VDSM = 1800 V ITAVM = 1660 A ITRMS = 2610 A ITSM = 21000 A VT0 = 0.83 V rT = 0.230 mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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18F1800
5SYA1028-04
18F1800
18F1600
18F1200
67xVDRM
CH-5600
V1660
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