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    Sensata Circuit Breakers JTMP-2-1REC4-52-1-F1-400-S

    CIR BRKR MAG-HYDR 400A 65VDC
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    Sensata Technologies JTEP-2-1REC4-52-1-F1-400

    Circuit Breakers Cir Brkr Hyd Mag
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    Sensata Technologies JTMP-2-1REC4-52-1-F1-400-S

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    Sensata Circuit Breakers JTEP-2-1REC4-52-1-F1-400

    Cir Brkr Hyd Mag, 2 Pole, DC Med Delay, 400A, JTEP Series | Sensata - Airpax JTEP-2-1REC4-52-1-F1-400
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    Sensata Circuit Breakers JTEP-2-1REC4-52-1-F1-400-A

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    21F1400 Datasheets Context Search

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    5STP21F1200

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-04 21F1400 21F1200 21F0800 CH-5600 5STP21F1200

    Untitled

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-04 21F1200 21F0800 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 1400 V = 1960 A = 3080 A = 25x103 A = 0.75 V = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-05 21F1400 CH-5600

    21F1400

    Abstract: 5STP21F1200 abb 26000
    Text: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 21F1400 21F1400 21F1200 21F0800 67xVDRM CH-5600 5STP21F1200 abb 26000

    Untitled

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-04 21F1400 21F1200 21F0800 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDSM = 1400 V ITAVM = 1960 A ITRMS = 3080 A ITSM = 25000 A VT0 = 0.75 V rT = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-04 21F1400 21F1200 21F0800 67xVDRM CH-5600