5STP24H2800
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 2625 A 4120 A 43000 A 0.85 V 0.160 mΩ Ω Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA1047-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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24H2800
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Untitled
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 2625 A 4120 A 43000 A 0.85 V 0.16 mΩ Ω Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA1047-02 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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24H2800
5SYA1047-02
24H2800
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CH-5600
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Untitled
Abstract: No abstract text available
Text: VDSM = 2800 V ITAVM = 2625 A ITRMS = 4120 A ITSM = 43000 A VT0 = 0.85 V rT = 0.160 mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA1047-02 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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24H2800
5SYA1047-02
24H2800
24H2600
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67xVDRM
CH-5600
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5STP24H2800
Abstract: ABB 5STP abb S 24H220 24H2600 24H2800
Text: Key Parameters VDSM = 2800 ITAVM = 2625 ITRMS = 4120 ITSM = 43000 VT0 = 0.85 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA 1047-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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24H2800
24H2800
24H2600
24H2200
67xVDRM
CH-5600
5STP24H2800
ABB 5STP
abb S
24H220
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