Untitled
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 3960 A 6230 A 60000 A 0.95 V 0.13 mΩ Ω Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA1012-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
|
Original
|
PDF
|
38N4200
5SYA1012-03
38N4200
38N4000
38N3600
CH-5600
|
5STP38N4200
Abstract: 38n3
Text: VDSM = 4200 V ITAVM = 3960 A ITRMS = 6230 A ITSM = 60000 A VT0 = 0.95 V rT = 0.130 mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA1012-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
|
Original
|
PDF
|
5SYA1012-03
38N4200
38N4200
38N4000
38N3600
67xVDRM
CH-5600
5STP38N4200
38n3
|
5STP38N4200
Abstract: 38N4200 ABB thyristor 5 38n3 38n3600
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 3960 A 6230 A 60000 A 0.95 V 0.130 mΩ Ω Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA1012-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
|
Original
|
PDF
|
38N4200
5SYA1012-03
38N4200
38N4000
38N3600
CH-5600
5STP38N4200
ABB thyristor 5
38n3
|
5stp38n4000
Abstract: 38N4200 38n3
Text: Key Parameters VDSM = 4200 ITAVM = 3750 ITRMS = 5880 ITSM = 60000 VT0 = 0.95 rT = 0.130 V A A A V mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA 1012-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
|
Original
|
PDF
|
38N4200
38N4200
38N4000
38N3600
67xVDRM
CH-5600
5stp38n4000
38n3
|