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    21F1200 Search Results

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    Sensata Circuit Breakers JTE-2-1REC4-52-1-F1-200

    CIR BRKR,HYDMAG
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    DigiKey JTE-2-1REC4-52-1-F1-200 Bulk 3
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    Master Electronics JTE-2-1REC4-52-1-F1-200
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    Sager JTE-2-1REC4-52-1-F1-200 1
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    Sensata Technologies JLE-1-1-52-1-F1-200

    Circuit Breakers Cir Brkr Hyd Mag
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    Mouser Electronics JLE-1-1-52-1-F1-200
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    Sensata Technologies JTE-2-1REC4-52-1-F1-200

    Circuit Breakers Cir Brkr,HydMag
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    Mouser Electronics JTE-2-1REC4-52-1-F1-200
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    Sensata Circuit Breakers JLE-1-1-52-1-F1-200

    #REF! | Sensata - Airpax JLE-1-1-52-1-F1-200
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    RS JLE-1-1-52-1-F1-200 Bulk 12 Weeks 3
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    Master Electronics JLE-1-1-52-1-F1-200
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    Sager JLE-1-1-52-1-F1-200 1
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    Sensata Circuit Breakers JTE-1-1REC4-52-1-F1-200

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    Master Electronics JTE-1-1REC4-52-1-F1-200
    • 1 $436.76
    • 10 $321.66
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    21F1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5STP21F1200

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-04 21F1400 21F1200 21F0800 CH-5600 5STP21F1200

    Untitled

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-04 21F1200 21F0800 CH-5600

    21F1400

    Abstract: 5STP21F1200 abb 26000
    Text: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 21F1400 21F1400 21F1200 21F0800 67xVDRM CH-5600 5STP21F1200 abb 26000

    Untitled

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-04 21F1400 21F1200 21F0800 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDSM = 1400 V ITAVM = 1960 A ITRMS = 3080 A ITSM = 25000 A VT0 = 0.75 V rT = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-04 21F1400 21F1200 21F0800 67xVDRM CH-5600