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    THINQ Search Results

    THINQ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ThinQ! Infineon Technologies Brochure thinQ! Original PDF

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    IEC60721-3-3

    Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
    Text: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		PDF IDC08S120E L4936E, IEC60721-3-3 L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology

    Storage of Products Supplied by Infineon Technologies

    Abstract: IEC60721-3-3 IEC60721 L4926E
    Text: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		PDF IDC73D120T6H IDC05S120E L4926E, Storage of Products Supplied by Infineon Technologies IEC60721-3-3 IEC60721 L4926E

    REG710

    Abstract: REG710-5 REG71050 REG71055 REG71055DDC REG71055DDCT REG710EVM-33 REG710EVM-5 TSOT23-6 MARKING CFf
    Text: REG710 www.ti.com. SBAS221G – DECEMBER 2001 – REVISED JANUARY 2009 60mA, 5.0V, Buck/Boost Charge Pump in ThinSOT-23 and ThinQFN


    Original     		PDF REG710 SBAS221G ThinSOT-23 OT23-6 TSOT23-6 REG71055 REG71050 REG710 REG710-5 REG71055DDC REG71055DDCT REG710EVM-33 REG710EVM-5 TSOT23-6 MARKING CFf

    IEC60721-3-3

    Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
    Text: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		PDF IDC05S60CE L4724E, IEC60721-3-3 Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60

    d05s60c

    Abstract: IDT05S60C JESD22
    Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT05S60C PG-TO220-2-2 D05S60C d05s60c IDT05S60C JESD22

    Untitled

    Abstract: No abstract text available
    Text: IDH05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 6 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original     		PDF IDH05SG60C 20mA2) PG-TO220-2 D05G60C

    smd diode marking f4

    Abstract: idd04
    Text: IDD04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior


    Original     		PDF IDD04S60C 20mA2) PG-TO252 IDD04S60C smd diode marking f4 idd04

    D04G60C

    Abstract: No abstract text available
    Text: IDH04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 4.5 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original     		PDF IDH04SG60C 20mA2) PG-TO220-2 D04G60C D04G60C

    D06S60C

    Abstract: IDV06S60C Schottky diode TO220 JESD22 d06s60
    Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description


    Original     		PDF IDV06S60C IDVxxS60C O220FullPAK D06S60C IDV06S60C Schottky diode TO220 JESD22 d06s60

    D06S60

    Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
    Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		PDF SDB06S60 Q67040-S4370 D06S60 D06S60 Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a

    D02G120

    Abstract: IDH02SG120 JESD22 J1028
    Text: IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 1200 600 V QC 3.2 7.2 nC 3 2 A I F; T C< 130 °C


    Original     		PDF IDH02SG120 PG-TO220-2 D02G120 IDH02SG120 JESD22 J1028

    IDB10S60C

    Abstract: PG-TO220-3-45 D10S60C JESD22
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C D10S60C IDB10S60C PG-TO220-3-45 D10S60C JESD22

    SMD diode f9

    Abstract: D09G60C IDD09SG60C JESD22 SMD F9
    Text: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior


    Original     		PDF IDD09SG60C 20mA2) SMD diode f9 D09G60C IDD09SG60C JESD22 SMD F9

    d02s60c

    Abstract: idv02s60c d02s60 JESD22 d02s6
    Text: IDV02S60C 2nd Generation thinQ!TM SiC Schottky Diode Fully isolated package with similar Rth,jc as the standard T0220 by using proprietary die attach processing Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark


    Original     		PDF IDV02S60C T0220 PG-TO220-2 d02s60c idv02s60c d02s60 JESD22 d02s6

    D10S60C

    Abstract: IDH10S60C JESD22
    Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH10S60C PG-TO220-2 D10S60C D10S60C IDH10S60C JESD22

    D16S60C

    Abstract: Schottky diode d16s60c IDT16S60C JESD22
    Text: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT16S60C PG-TO220-2-2 D16S60C D16S60C Schottky diode d16s60c IDT16S60C JESD22

    IDH09SG60C

    Abstract: JESD22 D09G60C
    Text: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior


    Original     		PDF IDH09SG60C 20mA2) IDH09SG60C JESD22 D09G60C

    D05S120

    Abstract: idh05s120 JESD22
    Text: IDH05S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior V DC 1200


    Original     		PDF IDH05S120 PG-TO220-2 PG-TO220ngerous D05S120 idh05s120 JESD22

    D20S30

    Abstract: SDB20S30 Q67040-S4374 SDP20S30 300V Schottky Diode smd
    Text: SDB20S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 IF


    Original     		PDF SDB20S30 PG-TO263 Q67040-S4374 D20S30 D20S30 SDB20S30 Q67040-S4374 SDP20S30 300V Schottky Diode smd

    D08S60C

    Abstract: IDH08S60C JESD22
    Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH08S60C PG-TO220-2 D08S60C D08S60C IDH08S60C JESD22

    D10G60C

    Abstract: IDH10SG60C D10G60 JESD22
    Text: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior


    Original     		PDF IDH10SG60C 20mA2) D10G60C IDH10SG60C D10G60 JESD22

    d06s60

    Abstract: T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60
    Text: SDP06S60, SDB06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		PDF SDP06S60, SDB06S60 SDT06S60 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60

    TO220 package infineon

    Abstract: IDV03S60C IDV06S60C idv02s60c
    Text: Product Brief SiC Schottky Diodes thinQ! Second Generation now available in TO-220 FullPAK High efficiency and thermal performance combine in a full isolated solution The new FullPAK solution combines the high electrical performance standards of Infineon second generation SiC Schottky diodes and the advantages of a full


    Original     		PDF O-220 B152-H9468-X-X-7600 DB2010-0002 TO220 package infineon IDV03S60C IDV06S60C idv02s60c

    d02s60

    Abstract: d02s60c PG-TO220-2-2 SDT02S60
    Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide


    Original     		PDF SDT02S60 PG-TO220-2-2. Q67040-S4511 D02S60 PG-TO-220-2-2 d02s60 d02s60c PG-TO220-2-2 SDT02S60