D02G120
Abstract: IDH02SG120 JESD22 J1028
Text: IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 1200 600 V QC 3.2 7.2 nC 3 2 A I F; T C< 130 °C
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Original
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PDF
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IDH02SG120
PG-TO220-2
D02G120
IDH02SG120
JESD22
J1028
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IDH02SG120
Abstract: No abstract text available
Text: IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 1200 600 V QC 3.2 7.2 nC 3 2 A I F; T C< 130 °C
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Original
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PDF
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IDH02SG120
PG-TO220-2
IDH02SG120
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D02G120
Abstract: PG-TO220-2 IDH02SG120 JESD22
Text: IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery V DC 1200 V QC 7.2 nC 2 A I F; T C< 130 °C
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Original
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PDF
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IDH02SG120
PG-TO220-2
IDH02ngerous
D02G120
PG-TO220-2
IDH02SG120
JESD22
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