Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IDB10S60C Search Results

    SF Impression Pixel

    IDB10S60C Price and Stock

    Infineon Technologies AG IDB10S60C

    DIODE SIL CARB 600V 10A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IDB10S60C Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.415
    • 10000 $4.415
    		Buy Now
    Bristol Electronics IDB10S60C 10
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components IDB10S60C 8
    • 1 $15
    • 10 $10
    • 100 $10
    • 1000 $10
    • 10000 $10
    		Buy Now

    Infineon Technologies AG IDB10S60CATMA2

    DIODE SIL CARB 600V 10A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IDB10S60CATMA2 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IDB10S60C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDB10S60C Infineon Technologies Silicon Carbide Schottky Diodes - NEW 3G now available!; Package: PG-TO220-3; Technology: thinQ! 2G; V: 600.0 V; IF (typ): 10.0 A; QC (typ): 24.0 nC; Package: D2PAK (TO-263) Original PDF
    IDB10S60CATMA2 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 600V 10A D2PAK Original PDF

    IDB10S60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IDB10S60C

    Abstract: PG-TO220-3-45 D10S60C JESD22
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C D10S60C IDB10S60C PG-TO220-3-45 D10S60C JESD22

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO263-3-2) D10S60C

    D10S60C

    Abstract: IDB10S60C JESD22 D10S60
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO220-3-45) D10S60C D10S60C IDB10S60C JESD22 D10S60

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO220-3-45 D10S60C

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO220-3-45) D10S60C

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C D10S60C

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    Infineon diffusion solder

    Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
    Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices


    Original     		PDF 600/650V SDB06S60 IDD02SG60C IDD03SG60C IDD04SG60C IDD05SG60C IDD06SG60C IDD08SG60C IDD09SG60C IDD10SG60C Infineon diffusion solder Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v