Untitled
Abstract: No abstract text available
Text: IDT08S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark QC 19 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 8 A • Temperature independent switching behavior I F @ T C < 100 °C
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IDT08S60C
PG-TO220-2-2
20mA2)
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D08S60C
Abstract: IDH08S60C JESD22
Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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PDF
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IDH08S60C
PG-TO220-2
D08S60C
D08S60C
IDH08S60C
JESD22
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Untitled
Abstract: No abstract text available
Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior
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Original
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PDF
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IDT08S60C
IDT08S60C
PG-TO220-2-2
D08S60C
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D08S60C
Abstract: No abstract text available
Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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PDF
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IDH08S60C
IDH08S60C
PG-TO220-2
D08S60C
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D08S60C
Abstract: IDT08S60C JESD22 D08S60 D08S
Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior
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Original
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PDF
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IDT08S60C
PG-TO220-2-2
D08S60C
D08S60C
IDT08S60C
JESD22
D08S60
D08S
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D08S60C
Abstract: IDT08S60C JESD22
Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior
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Original
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PDF
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IDT08S60C
PG-TO220-2-2
D08S60C
D08S60C
IDT08S60C
JESD22
|
Untitled
Abstract: No abstract text available
Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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PDF
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IDH08S60C
PG-TO220-2
D08S60C
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