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    D06S60 Price and Stock

    Samtec Inc IDSD-06-S-60.00

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    Samtec Inc TCSD-06-S-60.00-01

    2MM DOUBLE ROW FEMALE IDC ASSEMB
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    Samtec Inc IDSD-06-S-60.00-ST8

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    Master Electronics IDSD-06-S-60.00-ST8
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    Samtec Inc FFSD-06-S-60.00-01-N

    .050 X .050 C.L. FEMALE IDC ASSE
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    Master Electronics FFSD-06-S-60.00-01-N
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    D06S60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D06S60C

    Abstract: IDV06S60C Schottky diode TO220 JESD22 d06s60
    Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description


    Original     		PDF IDV06S60C IDVxxS60C O220FullPAK D06S60C IDV06S60C Schottky diode TO220 JESD22 d06s60

    D06S60

    Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
    Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		PDF SDB06S60 Q67040-S4370 D06S60 D06S60 Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a

    d06s60

    Abstract: T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60
    Text: SDP06S60, SDB06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		PDF SDP06S60, SDB06S60 SDT06S60 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60

    D06S60C

    Abstract: No abstract text available
    Text: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT06S60C PG-TO220-2-2 IDT06S60C PG-TO220-2-2 D06S60C

    IDT06S60C

    Abstract: D06S60C
    Text: IDT06S60C 2nd generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V Qc 15 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 6 A • Temperature independent switching behavior I F @ T C < 100°C 9 A • Revolutionary semiconductor material - Silicon Carbide


    Original     		PDF IDT06S60C PG-TO220-2-2 20mA2) IDT06S60C D06S60C

    D06S60C

    Abstract: No abstract text available
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 15 nC IF 6 A • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C PG-TO263-3-2) D06S60C D06S60C

    D06S60C

    Abstract: No abstract text available
    Text: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH06S60C PG-TO220-2 D06S60C D06S60C

    d06s60

    Abstract: D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435
    Text: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary V VRRM 600  Revolutionary semiconductor material - Silicon Carbide  Switching behavior benchmark Qc 21 nC  No reverse recovery


    Original     		PDF SDP06S60, SDB06S60 SDT06S60 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435

    D06S60C

    Abstract: IDT06S60C JESD22 d06s60
    Text: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT06S60C PG-TO220-2-2 D06S60C PG-TO220-2-2: D06S60C IDT06S60C JESD22 d06s60

    SDP06S60

    Abstract: No abstract text available
    Text: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		PDF SDP06S60 SDT06S60 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4371 Q67040-S4446

    d06s60

    Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
    Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		PDF SDB06S60 P-TO220-3 Q67040-S4370 D06S60 d06s60 diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ

    d06s60

    Abstract: D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd
    Text: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary  Revolutionary semiconductor V 600 VRRM material - Silicon Carbide  Switching behavior benchmark Qc 21 nC  No reverse recovery


    Original     		PDF SDP06S60, SDB06S60 SDT06S60 P-TO220-2-21. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd

    d06s60

    Abstract: D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2
    Text: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		PDF SDP06S60 SDT06S60 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4371 D06S60 d06s60 D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2

    D06S60C

    Abstract: IDH06S60C JESD22 60-06A D06S60
    Text: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH06S60C PG-TO220-2 D06S60C D06S60C IDH06S60C JESD22 60-06A D06S60

    Untitled

    Abstract: No abstract text available
    Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description


    Original     		PDF IDV06S60C IDVxxS60C O220FullPAK

    D06S60C

    Abstract: IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C D06S60C D06S60C IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6

    Q67040-S4371

    Abstract: D06S60 P-TO220-3 SDT06S60 Q67040-S4446
    Text: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		PDF SDP06S60 SDT06S60 PG-TO220-2-2. P-TO220-3 P-TO220-3 Q67040-S4371 Q67040-S4446 D06S60 SDT06S60 Q67040-S4446

    D06S60C

    Abstract: Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C PG-TO220-3-45) D06S60C D06S60C Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6

    d06s60

    Abstract: No abstract text available
    Text: SDP06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		PDF SDP06S60 SDT06S60 PG-TO220-2-2. PG-TO220-3-1. Q67040-S4371 Q67040-S4446 d06s60

    Q67040-S4370

    Abstract: No abstract text available
    Text: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF


    Original     		PDF SDP06S60 SDB06S60 P-TO220-3 P-TO220-3-1 Q67040-S4371 D06S60 Q67040-S4370

    D06S60C

    Abstract: d06s60 IDT06S60C JESD22 diode c25
    Text: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT06S60C PG-TO220-2-2 D06S60C D06S60C d06s60 IDT06S60C JESD22 diode c25

    D06S60C

    Abstract: No abstract text available
    Text: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH06S60C IDH06S60C PG-TO220-2 D06S60C

    Untitled

    Abstract: No abstract text available
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C PG-TO220-3-45) D06S60C

    smd diode MARKING F6

    Abstract: Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C PG-TO220-3-45 D06S60C smd diode MARKING F6 Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6