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    D02S6 Price and Stock

    Samtec Inc IDSD-02-S-60.00-ST4-RW

    INSULATION DISPLACEMENT TERMINAL
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    DigiKey IDSD-02-S-60.00-ST4-RW Bulk 1
    • 1 $14.65
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    Avnet Americas IDSD-02-S-60.00-ST4-RW Bulk 1
    • 1 $14.65
    • 10 $13.87
    • 100 $10.65
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    Mouser Electronics IDSD-02-S-60.00-ST4-RW
    • 1 $14.65
    • 10 $13.87
    • 100 $10.65
    • 1000 $6.71
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    Master Electronics IDSD-02-S-60.00-ST4-RW
    • 1 $18.33
    • 10 $16.3
    • 100 $11.59
    • 1000 $8.84
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    Sager IDSD-02-S-60.00-ST4-RW 1
    • 1 $14.65
    • 10 $13.87
    • 100 $10.65
    • 1000 $9.87
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    Samtec Inc HCSD-02-S-6.00-01-G-ST2-P04

    .100" DOUBLE ROW IDC RIBBON CABL
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    DigiKey HCSD-02-S-6.00-01-G-ST2-P04 Bulk 1
    • 1 $8.36
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    Avnet Americas HCSD-02-S-6.00-01-G-ST2-P04 Bulk 1
    • 1 $5.62
    • 10 $5.62
    • 100 $4.5
    • 1000 $3.7
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    Mouser Electronics HCSD-02-S-6.00-01-G-ST2-P04
    • 1 $5.62
    • 10 $5.62
    • 100 $4.5
    • 1000 $3.43
    • 10000 $2.9
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    Samtec Inc IDSD-02-S-60.00-T-ST4

    Cable Assembly Flat Ribbon 1.524m 28AWG 4 POS IDC Connector SKT IDT Bulk - Bulk (Alt: IDSD-02-S-60.00-T-)
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    Avnet Americas IDSD-02-S-60.00-T-ST4 Bulk 1
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    Master Electronics IDSD-02-S-60.00-T-ST4
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    • 10 $18.28
    • 100 $10.48
    • 1000 $9.46
    • 10000 $8.36
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    Sager IDSD-02-S-60.00-T-ST4
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    Samtec Inc IDSD-02-S-60.00-ST4

    Cable Assembly Flat Ribbon 1.524m 28AWG 4 POS IDC Connector SKT IDT Bulk - Bulk (Alt: IDSD-02-S-60.00-ST)
    Free Sample
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    Avnet Americas IDSD-02-S-60.00-ST4 Bulk 1
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    Master Electronics IDSD-02-S-60.00-ST4
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    • 10 $19.4
    • 100 $11.13
    • 1000 $10.04
    • 10000 $8.87
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    Sager IDSD-02-S-60.00-ST4
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    Samtec Inc IDSD-02-S-60.02

    Cable Assembly Flat Ribbon 1.524m 28AWG 4 POS IDC Connector SKT IDT Bulk - Bulk (Alt: IDSD-02-S-60.02)
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    Avnet Americas IDSD-02-S-60.02 Bulk 1
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    Master Electronics IDSD-02-S-60.02
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    • 100 $10.65
    • 1000 $9.61
    • 10000 $8.48
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    Sager IDSD-02-S-60.02
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    D02S6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d02s60c

    Abstract: idv02s60c d02s60 JESD22 d02s6
    Text: IDV02S60C 2nd Generation thinQ!TM SiC Schottky Diode Fully isolated package with similar Rth,jc as the standard T0220 by using proprietary die attach processing Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark


    Original     		PDF IDV02S60C T0220 PG-TO220-2 d02s60c idv02s60c d02s60 JESD22 d02s6

    d02s60

    Abstract: d02s60c PG-TO220-2-2 SDT02S60
    Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide


    Original     		PDF SDT02S60 PG-TO220-2-2. Q67040-S4511 D02S60 PG-TO-220-2-2 d02s60 d02s60c PG-TO220-2-2 SDT02S60

    d02s60c

    Abstract: Infineon power diffusion process Schottky diode TO220 ThinQ JESD22 d02s60
    Text: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Data Sheet Rev. 2.0, 2010-05-31 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV02S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the


    Original     		PDF IDV02S60C IDVxxS60C O220FullPAK d02s60c Infineon power diffusion process Schottky diode TO220 ThinQ JESD22 d02s60

    Untitled

    Abstract: No abstract text available
    Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide


    Original     		PDF SDT02S60 PG-TO220-2-2. Q67040-S4511 D02S60

    d02s60

    Abstract: D02S60C SDT02S60 D02S P-TO220-2-2
    Text: SDT02S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide


    Original     		PDF SDT02S60 P-TO220-2-2. Q67040-S4511 D02S60 d02s60 D02S60C SDT02S60 D02S P-TO220-2-2

    d02s60c

    Abstract: IDT02S60C d02s60 PG-TO220 JESD22 IDT02S60
    Text: IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Product Summary V DC 600 V • Revolutionary semiconductor material - Silicon Carbide Qc 3.2 nC • No reverse recovery/ no forward recovery IF 2 A • Temperature independent switching behavior


    Original     		PDF IDT02S60C PG-TO220-2-2 D02S60C d02s60c IDT02S60C d02s60 PG-TO220 JESD22 IDT02S60

    d02s60c

    Abstract: No abstract text available
    Text: IDT02S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 3.2 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 2 A I F @ T C < 100°C 3 A • Revolutionary semiconductor material - Silicon Carbide


    Original     		PDF IDT02S60C PG-TO220-2-2 20mA2) d02s60c

    d02s60

    Abstract: No abstract text available
    Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide


    Original     		PDF SDT02S60 PG-TO220-2-2. Q67040-S4511 D02S60 d02s60

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Data Sheet Rev. 2.0, 2010-05-31 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV02S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the


    Original     		PDF IDV02S60C IDVxxS60C O220FullPAK

    Untitled

    Abstract: No abstract text available
    Text: LINEAR INTEGRATED CIRCUIT KA431/A T092 PROGRAMMABLE PRECISION REFERENCES The KA431/A are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between V„f approximately 2.5


    OCR Scan     		PDF KA431/A KA431/A 100mA

    Untitled

    Abstract: No abstract text available
    Text: HM5116165A Series Preliminary 1,048,576-word x 16-btt Dynamic Random Access Memory Rev. 0.0 Jul. 20.1994 HITACHI T be H itachi HM 5116165A is a CMOS dynamic R A M organized 1,048.576 w ords x 16 bits. It employs the most advanced CMOS technology for h ig h p e rfo rm a n c e an d low p o w e r.


    OCR Scan     		PDF HM5116165A 576-word 16-btt 116165A mW/495 mW/440 5116165AJ