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    TC534200P Search Results

    TC534200P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TC534200P-15 Toshiba 4M BIT (256K WORD x 16 BIT / 512K WORD x 8 BIT) CMOS MASK ROM Scan PDF

    TC534200P Datasheets Context Search

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    character generater

    Abstract: No abstract text available
    Text: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC534200P/F 600mil 40pin 525mil 150ns 20/uA TC534200P TC534200P/F-- character generater

    TC534200P

    Abstract: No abstract text available
    Text: • IIS 4M BIT 256K W O RD x 16 B IT /5 1 2 K W O R D x 8B IT CM OS M ASK ROM DESCRIPTION The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when BVt E is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF BIT/512K TC534200P/F 600mil 40pin 525mil 150ns TC534200P DIP40-P- TC534200P

    TC534200P

    Abstract: No abstract text available
    Text: TC534200P/F 4 M BIT 256K W O R D x 16 BIT/512K W O R D x 8BIT C M O S M A S K RO M PRELIMINARY DESCRIPTION The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when BYTE is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC534200P/F BIT/512K TC534200P/F 600mil 40pin 525mil 150ns TC534200P

    534200P

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC534200P/F-4M BIT 256K W O R D x 16 BIT /51 2K W O R D x 8 B IT C M O S M A S K RO M DESCRIPTIO N T h e T C 5 3 4 2 0 0 P /F is a 4 ,1 9 4 ,3 0 4 b its re a d only m em ory o rgan ize d a s 2 6 2 ,1 4 4 w ords b y 16 b its w hen


    OCR Scan     		PDF TC534200P/F---------------------------4M TC534200P/F 534200P

    TC534200F

    Abstract: UTC A11 TC534200P
    Text: TOSHIBA TC534200P/F SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS MASK ROM Description The TC534200P/F is a 4,194,304 bit read only memory organized as 262,144 words by 16 bits when BYTE is logical high and organized as 524,288 words by 8 bits when BY I t is logical low.


    OCR Scan     		PDF TC534200P/F BIT/524 TC534200P/F 600mil 40-pin 525mil TC534200P TC534200F UTC A11

    SOP40 eprom

    Abstract: TC534200P tc534200
    Text: *1* »i f i ti v n t B H H H ti P r ^ 4 M E G A BIT 262,144 W O R D x 16 B IT / 524,288 W O R D x SBtT C M O S O N E TIM E P R O G R A M M A B LE R EA D O N LY M E M O R Y DESCRIPTION The TC 544200P/F is a 4,194,304 bit CMOS One tim e program m able read only memory,


    OCR Scan     		PDF 16BIT/ TC544200P/F 120ns/150ns/200ns 60mA/8 TC574200D0 TC544200P/Fâ DIP40-P-600 22TYP SOP40 eprom TC534200P tc534200

    HA1334

    Abstract: TC534200P
    Text: TOSHIBA TC544200P/F-120, -150 SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY Description T heT C 544200P /F is a 4,194,304 word x 16 bit CMOS one time programmable read only memory. It is organized as either


    OCR Scan     		PDF TC544200P/F-120, BIT/524 544200P 544200P/F 40-pin TC544200P/F 120ns/150ns 60mA/8 TC574200D HA1334 TC534200P

    TC574200D-150

    Abstract: C1906
    Text: 4MEGA BIT 262,144 WORD X 16BIT/ 524,288 WORD x 8BIT CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY DESCRIPTION The TC574200D is a 4,194,304 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is organized as 256K words of 16 bit or 512K words of 8 b it


    OCR Scan     		PDF 16BIT/ TC574200D 120ns /150ns 200ns TC574200D-120, TC574200D-150 C1906

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    574200D

    Abstract: TC574200D-10
    Text: TOSHIBA TC574200D-10, -120, -150 SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC574200D is a 262,144 word x 16 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It


    OCR Scan     		PDF TC574200D-10, TC574200D 574200D 40-pin 100ns/120ns/150ns 70mA/10MHz. TC574200D TC574200D. TC574200D-10

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    TC574200D-10

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC574200D-10,-120,-150 4 M E G A B IT 262,144 W O R D X 16 B IT / 524,288 W O R D x 8 BIT C M O S U.V . E R A S A B L E A N D E L E C T R IC A L L Y P R O G R A M M A B L E R E A D O N L Y M E M O R Y DESCRIPTIO N


    OCR Scan     		PDF TC574200D-10 TC574200D 150ns

    TC5816FT

    Abstract: TC5332410F TC5316200CP TC531621 TC5310
    Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12


    OCR Scan     		PDF TC58F010P-10, 600mil 525mil TC58F010F-10, TC58F010FT10, TC58F010TR-10, TC58F010T-10, TC58F4000P-12, TC58F4000F-12, 450mi! TC5816FT TC5332410F TC5316200CP TC531621 TC5310

    TC574200D-10

    Abstract: TC5740000 TC574200D-120 TC574200D-150 T0740 TC534200P ON4039 TCS74200D
    Text: — -, ~’ N p| • ÏÊBÊBSmÈÊBÊÊÊâÊSm ffjpllill *■f tr i * WÊÊÊÊÊMÊÎÎÊMâKÊkÊtk^SÎ IflN 4M EGA BIT 262,144 W O R D x 16BIT/524.288 WORD X8BIT CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY DESCRIPTION The TC574200D


    OCR Scan     		PDF 16BIT/524 TC574200D 100ns 120ns 150ns TC574200D. A10-A17. TC574200Dâ TC574200D-10 TC5740000 TC574200D-120 TC574200D-150 T0740 TC534200P ON4039 TCS74200D