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    KOA Speer Electronics Inc RK73H1HTTC5363F

    RES 536K OHM 1% 1/20W 0201
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    DigiKey RK73H1HTTC5363F Reel 10,000 10,000
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    RK73H1HTTC5363F Cut Tape 9,000 1,000
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    Mouser Electronics RK73H1HTTC5363F 3,300
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    KOA Speer Electronics Inc RK73H1HTTC5361F

    RES 5.36K OHM 1% 1/20W 0201
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    Mouser Electronics RK73H1HTTC5361F 637
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    TTI RK73H1HTTC5361F Reel 20,000 10,000
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    ATGBICS FTLX3671DTC53-C

    DWDM Ch53 SFP+ 1.2 to 11.3GBase
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    DigiKey FTLX3671DTC53-C Tray 8,856 1
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    • 100 $705.5
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    ATGBICS FTLX3671MTC53-C

    DWDM Ch53 SFP+ 1.2 to 11.3GBase
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    DigiKey FTLX3671MTC53-C Tray 8,477 1
    • 1 $742.6
    • 10 $742.6
    • 100 $705.5
    • 1000 $631.3
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    KOA Speer Electronics Inc RK73H1HTTC5360F

    RES 536 OHM 1% 1/20W 0201
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    DigiKey RK73H1HTTC5360F Cut Tape 6,000 1
    • 1 $0.1
    • 10 $0.04
    • 100 $0.0225
    • 1000 $0.01377
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    TC53 Datasheets (311)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TC53 Cornell Dubilier Aluminum Capacitors, Capacitors, CAP ALUM 12UF 250V AXIAL Original PDF
    TC53 Microchip Technology VOLTAGE DETECTOR Original PDF
    TC53 Unknown TC53 Original PDF
    TC530 Microchip Technology 5V Precision Data Acquisition Subsystems Original PDF
    TC530 Microchip Technology 5V Precision Data Acquisition Subsystems Original PDF
    TC530 TelCom Semiconductor 5V PRECISION DATA ACQUISITION SUBSYSTEMS Original PDF
    TC530CKW TelCom Semiconductor 5V precision data acquisition subsystems. Original PDF
    TC530COI Microchip Technology Data Acquisition - ADCs/DACs - Special Purpose, Integrated Circuits (ICs), IC DATA ACQ SUBSYSTEM 28SOIC Original PDF
    TC530COI Microchip Technology 5 V Precision Data Acquisition Subsystem Original PDF
    TC530COI TelCom Semiconductor 5V PRECISION DATA ACQUISITION SUBSYSTEMS Original PDF
    TC530COI TelCom Semiconductor 5V PRECISION DATA ACQUISITION SUBSYSTEMS Original PDF
    TC530COI713 Microchip Technology Data Acquisition - ADCs/DACs - Special Purpose, Integrated Circuits (ICs), IC DATA ACQ SUBSYSTEM 28SOIC Original PDF
    TC530COI713 Microchip Technology Data Acquisition, 5V Precision Data Acquisition Subsystems, Tape and Reel Original PDF
    TC530COITR Microchip Technology 5 V Precision Data Acquisition Subsystem Original PDF
    TC530CPI Microchip Technology 5V Precision Data Acquisition Subsystems Original PDF
    TC530CPJ Microchip Technology Data Acquisition - ADCs/DACs - Special Purpose, Integrated Circuits (ICs), IC DATA ACQ SUBSYSTEM 28SDIP Original PDF
    TC530CPJ Microchip Technology 5 V Precision Data Acquisition Subsystem Original PDF
    TC530CPJ TelCom Semiconductor 5V PRECISION DATA ACQUISITION SUBSYSTEMS Original PDF
    TC530CPJ TelCom Semiconductor 5V PRECISION DATA ACQUISITION SUBSYSTEMS Original PDF
    TC530CPL TelCom Semiconductor 5V precision data acquisition subsystems. Original PDF
    ...

    TC53 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CA SC-74A

    Abstract: 200B DK-2750 TC53
    Text: TC53 VOLTAGE DETECTOR FEATURES • ■ ■ ■ ■ ■ GENERAL DESCRIPTION Highly Accurate . ±2% Low Power Consumption . 1.0µA, Typ. Detect Voltage Range . 1.6V to 6.0V in 0.1V Steps Operating Voltage . 1.5V to 10.0V


    Original
    PDF OT-23A DS21432A TC53-2 CA SC-74A 200B DK-2750 TC53

    marking ACOM

    Abstract: RIFA 430 aCOM marking MCP1525 TC530 TC530COI TC530CPI TC534 TC534CKW TC534CPL
    Text: Obsolete Device TC530/TC534 5V Precision Data Acquisition Subsystems Features General Description • Precision up to 17-Bits A/D Converter • 3-Wire Serial Port • Flexible: User Can Trade Off Conversion Speed For Resolution • Single Supply Operation


    Original
    PDF TC530/TC534 17-Bits) TC530) TC530/TC534 17-bits TC534 TC530 iden36-4803 DS21433C-page marking ACOM RIFA 430 aCOM marking MCP1525 TC530COI TC530CPI TC534CKW TC534CPL

    TC53

    Abstract: No abstract text available
    Text: Temperature Compensated Crystal Oscillators ULTRA MINIATURE 5x3.2x1.7mm SMD TCXO/VCTCXO IN LCC PACKAGE - TC53 Series FEATURES RoHS Compliant (Pb-Free), Tight Stability over Wide Temperature Range Voltage Control Option for Electric Frequency Adjustments


    Original
    PDF 7456M, 3676M, 3677M, 5535M, TC53-13M000-BV: TC53

    Untitled

    Abstract: No abstract text available
    Text: Obsolete Device TC530/TC534 5V Precision Data Acquisition Subsystems Features General Description • Precision up to 17-Bits A/D Converter • 3-Wire Serial Port • Flexible: User Can Trade Off Conversion Speed For Resolution • Single Supply Operation


    Original
    PDF TC530/TC534 17-Bits) TC530) TC530/TC534 17-bits TC534 DS21433C-page

    200B

    Abstract: DK-2750 RG41 TC53 SOT23A
    Text: M TC53 Voltage Detector Features General Description • • • • • • The TC53 is a low power voltage detector. Typical supply current consumption is only 1µA at an input voltage of 2V. The voltage detection threshold setting is factory-programmed and guaranteed to ±2% accuracy.


    Original
    PDF D-81739 DS21432C-page 200B DK-2750 RG41 TC53 SOT23A

    TC5316200bP

    Abstract: TC5316200BP/BF
    Text: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.


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    PDF TC5316200BP/BF TC5316200BP/BF 600mil 42-pin 44-pin TC5316200BP TC5316200BF

    character generater

    Abstract: No abstract text available
    Text: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.


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    PDF TC534200P/F 600mil 40pin 525mil 150ns 20/uA TC534200P TC534200P/F-- character generater

    A18D0

    Abstract: TC534000AP
    Text: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the


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    PDF TC534000AP/AF 288words TC534000AP 150ns, TC534000AP/ 600mil 32pin 525mil A18D0

    TC531621

    Abstract: No abstract text available
    Text: TOSHIBA TC5316210CP/CF PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description TheTC 5316210C P/C F is a 16,777,216 bit read only m em ory organized as 1,048,576 w ords by 16 bits when BYTE is logical


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    PDF TC5316210CP/CF 5316210C TC5316210CP/CF 5316210CP/CF 600mil 42-pin 44-pin TC531621OCP/CF TC531621

    TC531024P-12

    Abstract: No abstract text available
    Text: TOSHIBA TC531024P-12/15 TC531024F-12/15 SILICON STACKED GATE CMOS 65,536 WORD x 16 BIT CMOS MASK ROM Description The T C 5 3 1 0 2 4 P /F is a 1,048,576 bit read only m em ory organized as 65,536 words by 16 bits. The T C 5 3 1 0 2 4 P /F is fabricated using Toshiba’s advanced C M O S technology w hich results in high speed and low pow er features:


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    PDF TC531024P-12/15 TC531024F-12/15 120ns/150ns, 600mil 40-pin 525mil TC531024P/F TC531024P-12/15, TC531024P-12

    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC531621OBP/BF/BFT 16M BIT 1M W O R D x 16 B IT / 2 M W ORD TENTATIVE x 8 B IT C M O S M A S K R O M DESCRIPTIO N T he T C 5316210B P / B F / BFT is a 16,777,216 bits read only m em ory organized as 1,048,576 words by


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    PDF TC531621OBP/BF/BFT 5316210B 42pin TC5316210BP/BF/BFT A0-A19

    tc818a

    Abstract: TC514
    Text: DATA ACQUISITION TC500 TC510 TC520A 16 Bit Front End 17 Bit Front End S.I.A. TC500A TC514 17 Bit Front End 17 Bit Front End with 4 Channel Input MUX TC534 17 Bit, 4 Input Channel TC7135* 4-1/2 Digit A/D TC14433/A* 3-1/2 Digit A/D *See Web Site for Data Sheet


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    PDF TC500 TC510 TC520A TC534 TC7135* TC500A TC514 TC14433/A* TC7129 TC820 tc818a TC514

    TMM333P

    Abstract: RC032 TMM333 TC5334P 1ba4 RDD16
    Text: TOSHIBA MOS MEMORY PRODUCTS 4,096 W O R D X 8 B IT C M O S M A S K RO M SI L I C O N G ATE — - - . _ TC5334P CMOS DESCRIPTION The TC5334P is a 32,768 bit low power read only memory organized as 4,096 words by 8 bits using C M O S technology, and operates from a single 5V


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    PDF TC5334P TC5334P TMM333P, 20/jA, TMM333P RC032 TMM333 1ba4 RDD16

    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC5316200AP/AF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD x 8 B IT C M O S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 6 2 0 0 A P / A F is a 1 6 ,7 7 7 ,2 1 6 b its r e a d o n ly m e m o ry o rg a n iz e d a s 1 ,0 4 8 ,5 7 6 w o rd s b y 1 6


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    PDF TC5316200AP/AF A0-A19

    TC538000AF

    Abstract: OA60
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538000AP/AF SILICON GATE CMOS 8 MBIT 1 M W O RD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538000AP/AF is a 8,388,608-bit Read Only Memory organized as 1,048,576 words by 8 bits. The TC538000AP/AF is fabricated using Toshiba’s advanced CMOS technology which provides the


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    PDF TC538000AP/AF TC538000AP/AF 608-bit 32-pin DIP/525 150ns TC538000AF OA60

    50702

    Abstract: TC531024P-15 C-15 DIP40 TC531024F-15
    Text: .iiiiiiiiiiiiiMiwniniiiti^iginililBiiiii11 1M BIT 65,536 W ORD x 16 BIT CMOS MASK ROM DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high


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    PDF TC531024P/F 120ns 150ns, 600mil 40pin 525mil 50702 TC531024P-15 C-15 DIP40 TC531024F-15

    toshiba lot number format

    Abstract: TC5335P TMM333P TMM33 1ba4 5335P
    Text: 1 TOSHIBA MOS MEMORY PRODUCTS 4 .0 9 6 W O R D X 8 B IT CMOS M A S K ROM TC5335P S IL IC O N G A T E C M O S DESCRIPTION The TC 5335P m e m o ry CMOS is a 3 2 , 7 6 8 o r g a n iz e d t e c h n o lo g y , s u p p ly . The TC 5335P d e v ic e s e le c t io n


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    PDF TC5335P TC5335P 5335P TMM333P toshiba lot number format TMM33 1ba4

    Untitled

    Abstract: No abstract text available
    Text: 16M BIT 1 M W O R D x 16 B1T/2M W O R D x 8BIT C M O S M A S K R O M DESCRIPTION The TC5316200P/F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and is organized as 2,097,152 words by 8 bits, when BYTE is logical low.


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    PDF TC5316200P/F 600mil 42pin TC5316200P/Fâ DIP42â P-600.

    TC5316200CP

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA CIRCUIT TOSHIBA MOS INTEGRATED CIRCUIT TC5316200 C P/ CF / CFT Seiko Instruments Inc TECHNICAL DATA SILICON GATE CMOS 16 MBIT (1 M W O RD BY 16 BITS/2 M W O RD BY 8 BITS) CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16


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    PDF TC5316200 TC5316200CP/CF/CFT 216-bit 42-pin 44-pin 765TYP TC5316200CP

    SOP32 525mil

    Abstract: DIP32 AF-15
    Text: m ÈÊÈÊm 2M BIT 2 5 6 K W O R D X 8 B IT CM O S M A S K ROM DESCRIPTION The TC532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The T C 532000A P/A F is fabricated using Toshiba’s advanced CMOS technology which provides the


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    PDF TC532000AP/AF 150ns, 20/aA. 600mil 32pin 525mil SOP32 525mil DIP32 AF-15

    TC534200P

    Abstract: No abstract text available
    Text: • IIS 4M BIT 256K W O RD x 16 B IT /5 1 2 K W O R D x 8B IT CM OS M ASK ROM DESCRIPTION The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when BVt E is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.


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    PDF BIT/512K TC534200P/F 600mil 40pin 525mil 150ns TC534200P DIP40-P- TC534200P

    TMM2364

    Abstract: tmm2764 TC5364P toshiba mos memory products tmm2364 rom
    Text: TOSHIBA MOS MEMORY PRODUCTS 6 4 K BIT 8K W O R D X 8 BIT C M O S M A S K ROM TC5364P SILICON GATE C M O S DESCRIPTION cells and _clo cke d p eripheral c irc u itry . T h e T C 5 3 6 4 P is a 6 5 ,5 3 6 b it read o n ly m e m o ry organized as 8 ,1 9 2 w ords b y 8 bits w ith a lo w b it


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    PDF TC5364P TC5364P 20JuA TMM2364 tmm2764 toshiba mos memory products tmm2364 rom

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


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    PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    Untitled

    Abstract: No abstract text available
    Text: TC53H1024P-85 TARGET 1M BIT 64K WORD x 16 BIT HIGH-SPEED CMOS MASK ROM SIUCON GATE CMOS DESCRIPTION The TC53H1024P Is a high-speed 1,048,576 bits read only memory organized as 69,830 words by 16 bits with a low bit cost, thus being suitable for use in program memory of microprocessors.


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    PDF TC53H1024P-85 TC53H1024P 100uA TC57H1024D TC53H1024P