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    KM23V41 Search Results

    KM23V41 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM23V4100D Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23V4100DET Samsung Electronics 4M-Bit (512K x 8 /256x16) CMOS MASK ROM Original PDF
    KM23V4100DG Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23V4100DT Samsung Electronics 4M-Bit (512K x 8 /256x16) CMOS MASK ROM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256x16) 100ns 120ns 44-TSOP2-400 44-TSOP2-400)

    KM23V4100D

    Abstract: KM23V4100DG 40DIP600 40-DIP-600
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V4100DG 40-SOP-525 KM23V4100DG 40DIP600 40-DIP-600

    Untitled

    Abstract: No abstract text available
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V4100DG 40-SOP-525

    KM23V4100D

    Abstract: KM23V4100DET KM23V4100DT
    Text: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256x16) 100ns 120ns 44-TSOP2-400 KM23V4100DET KM23V4100DT

    KM23V4100D

    Abstract: KM23V4100DG
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V4100DG 40-SOP-525 KM23V4100DG

    KM23V4100D

    Abstract: KM23V4100DET KM23V4100DT 256x16 rom
    Text: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256x16) 100ns 120ns 44-TSOP2-400 KM23V4100DET KM23V4100DT 256x16 rom

    Untitled

    Abstract: No abstract text available
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    OCR Scan     		PDF KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V41000G 40-50P-525 KM23V41

    KM23V4100C

    Abstract: KM-23V4100CG
    Text: KM23V4100C G/T ci cr*1 ELECTRONICS CMOS Mask ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Supply voltage : 2.7V to 3.6V • Fast access time 3.0V Operation: 150ns(max.)


    OCR Scan     		PDF KM23V4100C 8/256K 150ns 120ns KM23V4100C 40-DIP-600 KM23V4100CG -SOP-525 KM23V4100CT 44-TSOP2-400 KM-23V4100CG

    KM23C16005AG

    Abstract: 44TSOP2 44-TSOP2
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16


    OCR Scan     		PDF KM23C4000C KM23C4100C KM23C410OCET KM23C4200C 512Kx 512Kx8/256Kx16 512Kx8/256Kx16 KM23C16005AG 44TSOP2 44-TSOP2

    Untitled

    Abstract: No abstract text available
    Text: KM23V41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    OCR Scan     		PDF KM23V41 512Kx8 /256Kx16) 100ns 120ns 23V4100D 40-DIP-600 23V4100DG 40-SO P-525

    Untitled

    Abstract: No abstract text available
    Text: KM23V4100D E T 4M-Bit (5 1 2 K X 8 /2 5 6 x 1 6 ) CMOS MASK ROM CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switehabte organization 524,288 x 8(byte mode) 262,144 x 16{word mode) • Fast access tine 3.3V Operation: 100ns(Max.) 3.0V Operation: 120ns(Max.)


    OCR Scan     		PDF KM23V4100D 100ns 120ns 44-TSOP2-4QO 100pF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23V41 OOB FP CMOS MASK ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 150ns(max.) • Supply voltage: single+3.0V or +3.3V


    OCR Scan     		PDF KM23V41 8/256K 150ns 40-pin, 600mil, 23V4100B KM23V4100B) KM23V4100BFP)

    23V4100DG

    Abstract: 40-SO
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    OCR Scan     		PDF KM23V4100D 512Kx8 256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 23V4100DG 40-SO P-525 23V4100DG

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G E L E C T R O N I C S b?E D INC • 7^4142 Q D 1 7 Q 1 7 bSb « S P I C K PRELIMINARY CMOS MASK ROM KM23V41 OOB FP 4M-Bit (512K X8/256K x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16 (word mode)


    OCR Scan     		PDF KM23V41 X8/256K 150ns 40-pin, 600mil, KM23V4100B KM23V4100B) KM23V4100BFP)

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


    OCR Scan     		PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


    OCR Scan     		PDF KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    KM23C8001

    Abstract: 32-sop
    Text: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E


    OCR Scan     		PDF KM23C256 KM23C512 KC23C1000 KM23C1001 KM23C1010 KM23C1010J KM23C1011 32Kx8 128Kx 256KX KM23C8001 32-sop

    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


    OCR Scan     		PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12