TC5316200bP
Abstract: TC5316200BP/BF
Text: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.
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OCR Scan
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TC5316200BP/BF
TC5316200BP/BF
600mil
42-pin
44-pin
TC5316200BP
TC5316200BF
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531620
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC5316200BP/BF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD 8 B IT C M O S M A S K R O M X D ESCRIPTIO N T h e T C 5 3 1 6 2 0 0 B P / B F is a 1 6 ,7 7 7 ,2 1 6 b its re a d on ly m em ory o rgan ize d a s 1 ,0 4 8 ,5 7 6 w ords by 16
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OCR Scan
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TC5316200BP/BF
A0-A19
531620
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TC5816FT
Abstract: TC5332410F TC5316200CP TC531621 TC5310
Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12
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OCR Scan
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TC58F010P-10,
600mil
525mil
TC58F010F-10,
TC58F010FT10,
TC58F010TR-10,
TC58F010T-10,
TC58F4000P-12,
TC58F4000F-12,
450mi!
TC5816FT
TC5332410F
TC5316200CP
TC531621
TC5310
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